2SC1566 Todos los transistores

 8.1. Size:244K  toshiba
 2sc1569.pdf

 8.2. Size:93K  panasonic
 2sc1567.pdf

Power Transistors 2SC1567, 2SC1567A Silicon NPN epitaxial planar type For low-frequency high power driver Unit mm 8.0+0.5 0.1 3.2 0.2 Complementary to 2SA0794, 2SA0794A 3.16 0.1 Features High collector-emitter voltage (Base open) VCEO Optimum for the driver stage of low-frequency and 40 W to 100 W output amplifier TO-126B package which requires no insulati

 8.3. Size:94K  panasonic
 2sc1568.pdf

Power Transistors 2SC1568 Silicon NPN epitaxial planar type For low-voltage type medium output power amplification Unit mm 8.0+0.5 0.1 3.2 0.2 Complementary to 2SA0900 3.16 0.1 Features Low collector-emitter saturation voltage VCE(sat) Satisfactory operation performances and high efficiency with a low- voltage power supply TO-126B package which incorporate

 8.4. Size:126K  inchange semiconductor
 2sc1567 2sc1567a.pdf

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1567 2SC1567A DESCRIPTION With TO-126 package Complement to type 2SA794/794A High collector to emitter voltage VCEO APPLICATIONS For low-frequency high power driver applications Optimum for the driver stage of low-frequency and 40 W to 100 W output amplifier PINNING PIN DESCRIPTION

 8.5. Size:195K  inchange semiconductor
 2sc1567.pdf

isc Silicon NPN Power Transistor 2SC1567 DESCRIPTION Collector-Emitter Breakdown Voltage V = 100V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SA794 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low-frequency high power driver. Optimum for the driver stage of low-frequency and 40W to 100W output

 8.6. Size:190K  inchange semiconductor
 2sc1568.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1568 DESCRIPTION Silicon NPN epitaxial planar type Low Collector-Emitter Breakdown Voltage Good Linearity of h FE 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low voltage type medium output power amplifications ABSOLUTE MAXIMUM

 8.7. Size:191K  inchange semiconductor
 2sc1569.pdf

isc Silicon NPN Power Transistor 2SC1569 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 300V(Min) (BR)CEO DC Current Gain- h = 40-170 @I = 50mA, V = 10V FE C CE High Current-Gain Bandwidth Product Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for color TV chroma output applications. ABSOLUTE MAXIMUM