2SC1569 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

isc Silicon NPN Power Transistor 2SC1569DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-:V = 300V(Min)(BR)CEODC Current Gain-: h = 40-170 @I = 50mA, V = 10VFE C CEHigh Current-Gain Bandwidth ProductMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for color TV chroma output applications.ABSOLUTE MAXIMUM

Power Transistors2SC1567, 2SC1567ASilicon NPN epitaxial planar typeFor low-frequency high power driverUnit: mm8.0+0.50.13.20.2Complementary to 2SA0794, 2SA0794A 3.160.1 Features High collector-emitter voltage (Base open) VCEO Optimum for the driver stage of low-frequency and 40 W to 100 Woutput amplifier TO-126B package which requires no insulati

Power Transistors2SC1568Silicon NPN epitaxial planar typeFor low-voltage type medium output power amplificationUnit: mm8.0+0.50.13.20.2Complementary to 2SA0900 3.160.1 Features Low collector-emitter saturation voltage VCE(sat) Satisfactory operation performances and high efficiency with a low-voltage power supply TO-126B package which incorporate

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1567 2SC1567A DESCRIPTION With TO-126 package Complement to type 2SA794/794A High collector to emitter voltage VCEO APPLICATIONS For low-frequency high power driver applications Optimum for the driver stage of low-frequency and 40 W to 100 W output amplifier PINNING PIN DESCRIPTION

isc Silicon NPN Power Transistor 2SC1567DESCRIPTIONCollector-Emitter Breakdown Voltage: V = 100V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SA794Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low-frequency high power driver.Optimum for the driver stage of low-frequency and 40Wto 100W output

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1568DESCRIPTIONSilicon NPN epitaxial planar typeLow Collector-Emitter Breakdown VoltageGood Linearity of hFE100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low voltage type medium output poweramplificationsABSOLUTE MAXIMUM