2N1708 Todos los transistores

 ..1. Size:280K  rca
 2n1708.pdf

 9.1. Size:605K  rca
 2n1701.pdf

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 2n1702.pdf

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 2n1700.pdf

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 2n1703.pdf

 9.5. Size:537K  general electric
 2n168a-2n168-2n169a-2n169-2n170.pdf

 9.6. Size:109K  general electric
 2n170.pdf

 9.7. Size:572K  ixys
 ixgh32n170a ixgt32n170a.pdf

IXGH 32N170A VCES = 1700 V High Voltage IXGT 32N170A IC25 = 32 A IGBT VCE(sat) = 5.0 V tfi(typ) = 50 ns Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25 C to 150 C 1700 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1700 V G VGES Continuous 20 V E C (TAB) VGEM Transient 30 V IC25 TC = 25 C32 A TO-247 AD (IXGH) IC90 TC = 90 C21 A ICM TC = 25 C, 1 ms 110 A

 9.8. Size:91K  ixys
 ixbt42n170a.pdf

Advance Technical Information BIMOSFETTM Monolithic VCES = 1700 V IXBH 42N170A Bipolar MOS Transistor IC25 = 42 A IXBT 42N170A VCE(sat) = 6.0 V tfi = 50 ns Symbol Test Conditions Maximum Ratings TO-268 (IXBT) VCES TJ = 25 C to 150 C 1700 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1700 V G VGES Continuous 20 V E (TAB) VGEM Transient 30 V IC25 TC = 25 C42 A TO-247 AD (IXBH)

 9.9. Size:75K  ixys
 ixbn42n170a.pdf

Advance Technical Information BIMOSFETTM Monolithic IXBN 42N170A VCES = 1700 V Bipolar MOS Transistor IC25 = 42 A VCE(sat) = 6.0 V tfi = 50 ns Symbol Test Conditions Maximum Ratings miniBLOC, SOT-227 B (IXBN) E153432 VCES TJ = 25 C to 150 C 1700 V E VCGR TJ = 25 C to 150 C; RGE = 1 M 1700 V G VGES Continuous 20 V VGEM Transient 30 V E IC25 TC = 25 C42 A C IC90 TC =

 9.10. Size:116K  ixys
 ixbh42n170a.pdf

Advance Technical Information BIMOSFETTM Monolithic IXBH 42N170A VCES = 1700 V Bipolar MOS Transistor IXBT 42N170A IC25 = 42 A VCE(sat) = 6.0 V tfi = 50 ns Symbol Test Conditions Maximum Ratings TO-268 (IXBT) VCES TJ = 25 C to 150 C 1700 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1700 V G VGES Continuous 20 V E (TAB) VGEM Transient 30 V IC25 TC = 25 C42 A TO-247 AD (IXBH)

 9.11. Size:175K  ixys
 ixbh42n170 ixbt42n170.pdf

High Voltage, High Gain VCES = 1700V IXBH42N170 BIMOSFETTM Monolithic IXBT42N170 IC90 = 42A Bipolar MOS Transistor VCE(sat) 2.8V TO-247 (IXBH) Symbol Test Conditions Maximum Ratings VCES TC = 25 C to 150 C 1700 V VCGR TJ = 25 C to 150 C, RGE = 1M 1700 V VGES Continuous 20 V G VGEM Transient 30 V C (TAB) C E IC25 TC = 25 C 80 A ILRMS Termin

 9.12. Size:569K  ixys
 ixgt32n170a.pdf

IXGH 32N170A VCES = 1700 V High Voltage IXGT 32N170A IC25 = 32 A IGBT VCE(sat) = 5.0 V tfi(typ) = 50 ns Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25 C to 150 C 1700 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1700 V G VGES Continuous 20 V E C (TAB) VGEM Transient 30 V IC25 TC = 25 C32 A TO-247 AD (IXGH) IC90 TC = 90 C21 A ICM TC = 25 C, 1 ms 110 A

 9.13. Size:573K  ixys
 ixgh32n170.pdf

High Voltage IXGH 32N170 VCES = 1700 V IXGT 32N170 IC25 = 75 A IGBT VCE(sat) = 3.3 V tfi(typ) = 250 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25 C to 150 C 1700 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1700 V G VGES Continuous 20 V E C (TAB) VGEM Transient 30 V IC25 TC = 25 C75 A TO-247 AD (IXGH) IC90 TC = 90 C32 A ICM TC

 9.14. Size:569K  ixys
 ixgh32n170a.pdf

IXGH 32N170A VCES = 1700 V High Voltage IXGT 32N170A IC25 = 32 A IGBT VCE(sat) = 5.0 V tfi(typ) = 50 ns Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25 C to 150 C 1700 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1700 V G VGES Continuous 20 V E C (TAB) VGEM Transient 30 V IC25 TC = 25 C32 A TO-247 AD (IXGH) IC90 TC = 90 C21 A ICM TC = 25 C, 1 ms 110 A

 9.15. Size:82K  ixys
 ixgr32n170h1.pdf

IXGR 32N170H1 VCES = 1700 V High Voltage IC25 = 38 A IGBT with Diode VCE(sat) = 3.5 V Electrically Isolated Tab tfi(typ) = 250 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings ISOPLUS247 (IXGR) E153432 VCES TJ = 25 C to 150 C 1700 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1700 V VGES Continuous 20 V G VGEM Transient 30 V C ISOLATED TAB E IC25 TC = 25 C3

 9.16. Size:173K  ixys
 ixbt42n170.pdf

High Voltage, High Gain VCES = 1700V IXBH42N170 BIMOSFETTM Monolithic IXBT42N170 IC90 = 42A Bipolar MOS Transistor VCE(sat) 2.8V TO-247 (IXBH) Symbol Test Conditions Maximum Ratings VCES TC = 25 C to 150 C 1700 V VCGR TJ = 25 C to 150 C, RGE = 1M 1700 V VGES Continuous 20 V G VGEM Transient 30 V C (TAB) C E IC25 TC = 25 C 80 A ILRMS Termin

 9.17. Size:117K  ixys
 ixbh42n170a ixbt42n170a.pdf

Advance Technical Information BIMOSFETTM Monolithic IXBH 42N170A VCES = 1700 V Bipolar MOS Transistor IXBT 42N170A IC25 = 42 A VCE(sat) = 6.0 V tfi = 50 ns Symbol Test Conditions Maximum Ratings TO-268 (IXBT) VCES TJ = 25 C to 150 C 1700 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1700 V G VGES Continuous 20 V E (TAB) VGEM Transient 30 V IC25 TC = 25 C42 A TO-247 AD (IXBH)

 9.18. Size:56K  ixys
 ixgt22n170.pdf

Advance Technical Data High Voltage IXGH 22N170 VCES = 1700 V IXGT 22N170 IC25 = 40 A IGBT VCE(sat) = 3.3 V tfi(typ) = 290 ns Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25 C to 150 C 1700 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1700 V G VGES Continuous 20 V E C (TAB) VGEM Transient 30 V IC25 TC = 25 C44 A TO-247 AD (IXGH) IC90 TC = 90 C22 A ICM TC

 9.19. Size:173K  ixys
 ixbh42n170.pdf

High Voltage, High Gain VCES = 1700V IXBH42N170 BIMOSFETTM Monolithic IXBT42N170 IC90 = 42A Bipolar MOS Transistor VCE(sat) 2.8V TO-247 (IXBH) Symbol Test Conditions Maximum Ratings VCES TC = 25 C to 150 C 1700 V VCGR TJ = 25 C to 150 C, RGE = 1M 1700 V VGES Continuous 20 V G VGEM Transient 30 V C (TAB) C E IC25 TC = 25 C 80 A ILRMS Termin

 9.20. Size:519K  ixys
 ixgr32n170ah1.pdf

Advance Technical Information IXGR 32N170AH1 VCES = 1700 V High Voltage IC25 = 26 A IGBT with Diode VCE(sat) = 5.2 V Electrically Isolated Tab tfi(typ) = 50 ns Symbol Test Conditions Maximum Ratings ISOPLUS247 (IXGR) E153432 VCES TJ = 25 C to 150 C 1700 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1700 V VGES Continuous 20 V G VGEM Transient 30 V C ISOLATED TAB E IC25 TC

 9.21. Size:56K  ixys
 ixgh22n170.pdf

Advance Technical Data High Voltage IXGH 22N170 VCES = 1700 V IXGT 22N170 IC25 = 40 A IGBT VCE(sat) = 3.3 V tfi(typ) = 290 ns Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25 C to 150 C 1700 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1700 V G VGES Continuous 20 V E C (TAB) VGEM Transient 30 V IC25 TC = 25 C44 A TO-247 AD (IXGH) IC90 TC = 90 C22 A ICM TC

 9.22. Size:129K  ixys
 ixgx32n170ah1.pdf

IXGX 32N170AH1 VCES = 1700 V High Voltage IGBT IC25 = 32 A with Diode VCE(sat) = 5.0 V tfi(typ) = 50 ns PLUS247 (IXGX) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 1700 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1700 V VGES Continuous 20 V (TAB) G VGEM Transient 30 V C E IC25 TC = 25 C32 A G = Gate, C = Collector, IC90 TC = 90 C21 A E = Emitter, TAB =

 9.23. Size:179K  ixys
 ixgf32n170.pdf

VCES = 1700V High Voltage IGBT IXGF32N170 IC110 = 19A VCE(sat) 3.5V ( Electrically Isolated Tab) tfi(typ) = 250ns ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 1700 V 1 2 VGES Continuous 20 V 5 VGEM Transient 30 V ISOLATED TAB IC25 TC = 25 C 44 A IC110 TC = 110 C 19 A ICM TC = 25 C, 1ms 200 A 1 = Gate 5 = Col

 9.24. Size:520K  ixys
 ixgx32n170h1.pdf

Advance Technical Information IXGX 32N170H1 VCES = 1700 V High Voltage IC25 = 75 A IGBT with Diode VCE(sat) = 3.3 V tfi(typ) = 290 ns PLUS247 (IXGX) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 1700 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1700 V VGES Continuous 20 V (TAB) G VGEM Transient 30 V C E IC25 TC = 25 C75 A G = Gate, C = Collector, IC90 TC

 9.25. Size:573K  ixys
 ixgt32n170.pdf

High Voltage IXGH 32N170 VCES = 1700 V IXGT 32N170 IC25 = 75 A IGBT VCE(sat) = 3.3 V tfi(typ) = 250 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25 C to 150 C 1700 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1700 V G VGES Continuous 20 V E C (TAB) VGEM Transient 30 V IC25 TC = 25 C75 A TO-247 AD (IXGH) IC90 TC = 90 C32 A ICM TC

 9.26. Size:577K  ixys
 ixgh32n170 ixgt32n170.pdf

High Voltage IXGH 32N170 VCES = 1700 V IXGT 32N170 IC25 = 75 A IGBT VCE(sat) = 3.3 V tfi(typ) = 250 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25 C to 150 C 1700 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1700 V G VGES Continuous 20 V E C (TAB) VGEM Transient 30 V IC25 TC = 25 C75 A TO-247 AD (IXGH) IC90 TC = 90 C32 A ICM TC

 9.27. Size:168K  ixys
 ixbr42n170.pdf

Preliminary Technical Information High Voltage, High Gain IXBR42N170 VCES = 1700V BIMOSFETTM Monolithic IC90 = 32A Bipolar MOS Transistor VCE(sat) 2.9V ISOPLUS247TM Symbol Test Conditions Maximum Ratings E153432 VCES TC = 25 C to 150 C 1700 V VCGR TJ = 25 C to 150 C, RGE = 1M 1700 V VGES Continuous 20 V G VGEM Transient 30 V Isolated Tab C E

 9.28. Size:172K  ixys
 ixth2n170d2 ixtt2n170d2.pdf

Depletion Mode VDSX = 1700V IXTT2N170D2 MOSFETs ID(on) > 2A IXTH2N170D2 RDS(on) 6.5 N-Channel TO-268 (IXTT) G S D (Tab) TO-247 (IXTH) Symbol Test Conditions Maximum Ratings VDSX TJ = 25 C to 150 C 1700 V VDGX TJ = 25 C to 150 C, RGS = 1M 1700 V VGSX Continuous 20 V G VGSM Transient 30 V D D (Tab) S PD TC = 25 C 568 W G = Gate

 9.29. Size:218K  inchange semiconductor
 2n1702.pdf

isc Silicon NPN Power Transistor 2N1702 DESCRIPTION Collector-Emitter Breakdown Voltage- V =60V(Min) CEO Minimum Lot-to-Lot variations for robust device Performance and reliable operation APPLICATIONS Power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25 ) UNI SYMBOL PARAMETER VALUE T V Collector-Base Voltage 60 V CBO V Collector-Emitter Voltage 60 V