2N1710 Todos los transistores

 

2N1710 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2N1710
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 15 W
   Tensión colector-base (Vcb): 60 V
   Tensión colector-emisor (Vce): 45 V
   Tensión emisor-base (Veb): 7 V
   Corriente del colector DC máxima (Ic): 2 A
   Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 120 MHz
   Ganancia de corriente contínua (hfe): 8
   Paquete / Cubierta: TO8

 Búsqueda de reemplazo de transistor bipolar 2N1710

 

2N1710 Datasheet (PDF)

 9.1. Size:623K  rca
2n1711.pdf

2N1710

 9.2. Size:51K  philips
2n1711 cnv 2.pdf

2N1710
2N1710

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D1112N1711NPN medium power transistor1997 May 28Product specificationSupersedes data of September 1994File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN medium power transistor 2N1711FEATURES PINNING High current (max. 500 mA)PIN DESCRIPTION Low voltage (max. 50 V).1 emit

 9.3. Size:46K  st
2n1711.pdf

2N1710
2N1710

2N1711EPITAXIAL PLANAR NPNDESCRIPTION The 2N1711 is a silicon Planar Epitaxial NPNtransistor in Jedec TO-39 metal case. It isintented for use in high performance amplifier,oscillator and switching circuits.The 2N1711 is also used to advantage inamplifiers where low noise is an important factor.TO-39INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGSSymbol Parameter Va

 9.4. Size:47K  st
2n1711 .pdf

2N1710
2N1710

2N1711EPITAXIAL PLANAR NPNDESCRIPTION The 2N1711 is a silicon Planar Epitaxial NPNtransistor in Jedec TO-39 metal case. It isintented for use in high performance amplifier,oscillator and switching circuits.The 2N1711 is also used to advantage inamplifiers where low noise is an important factor.TO-39INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGSSymbol Parameter Va

 9.5. Size:64K  central
2n1613 2n1711 2n1893.pdf

2N1710

145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824

 9.6. Size:318K  no
2n1715s.pdf

2N1710
2N1710

INCH-POUND The documentation and process conversion measures necessary to comply with this revision MILPRF19500/263B shall be completed by 13 April 2015. 12 January 2015 SUPERSEDING MILS19500/263A(ER) 15 May 1963 PERFORMANCE SPECIFICATION SHEET TRANSISTOR, NPN, SILICON, HIGH POWER, THROUGH-HOLE MOUNT, TYPES 2N1714 THROUGH 2N1717, QUALITY LEVEL JAN Inactive

 9.7. Size:317K  no
2n1714s.pdf

2N1710
2N1710

INCH-POUND The documentation and process conversion measures necessary to comply with this revision MILPRF19500/263B shall be completed by 13 April 2015. 12 January 2015 SUPERSEDING MILS19500/263A(ER) 15 May 1963 PERFORMANCE SPECIFICATION SHEET TRANSISTOR, NPN, SILICON, HIGH POWER, THROUGH-HOLE MOUNT, TYPES 2N1714 THROUGH 2N1717, QUALITY LEVEL JAN Inactive

 9.8. Size:318K  no
2n1717s.pdf

2N1710
2N1710

INCH-POUND The documentation and process conversion measures necessary to comply with this revision MILPRF19500/263B shall be completed by 13 April 2015. 12 January 2015 SUPERSEDING MILS19500/263A(ER) 15 May 1963 PERFORMANCE SPECIFICATION SHEET TRANSISTOR, NPN, SILICON, HIGH POWER, THROUGH-HOLE MOUNT, TYPES 2N1714 THROUGH 2N1717, QUALITY LEVEL JAN Inactive

 9.9. Size:318K  no
2n1716s.pdf

2N1710
2N1710

INCH-POUND The documentation and process conversion measures necessary to comply with this revision MILPRF19500/263B shall be completed by 13 April 2015. 12 January 2015 SUPERSEDING MILS19500/263A(ER) 15 May 1963 PERFORMANCE SPECIFICATION SHEET TRANSISTOR, NPN, SILICON, HIGH POWER, THROUGH-HOLE MOUNT, TYPES 2N1714 THROUGH 2N1717, QUALITY LEVEL JAN Inactive

 9.10. Size:127K  bocasemi
2n956 2n718a 2n1711.pdf

2N1710
2N1710

http://www.bocasemi.comBoca Semiconductor Corp. BSC http://www.bocasemi.com

 9.11. Size:74K  cdil
2n1711.pdf

2N1710
2N1710

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON PLANAR TRANSISTOR 2N1711TO-39Metal Can PackageGeneral Purpose TransistorABSOLUTE MAXIMUM RATINGSDESCRIPTION SYMBOL VALUE UNITCollector Emitter Voltage, RBE

 9.12. Size:92K  microelectronics
2n1613 2n1711.pdf

2N1710
2N1710

Otros transistores... 2N1703 , 2N1704 , 2N1705 , 2N1706 , 2N1707 , 2N1708 , 2N1708A , 2N1709 , 2N2222 , 2N1711 , 2N1711-46 , 2N1711A , 2N1711B , 2N1711L , 2N1711S , 2N1713 , 2N1714 .

 

 
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