2N1711 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2N1711
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.8 W
Tensión colector-base (Vcb): 75 V
Tensión colector-emisor (Vce): 50 V
Tensión emisor-base (Veb): 7 V
Corriente del colector DC máxima (Ic): 0.6 A
Temperatura operativa máxima (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 70 MHz
Capacitancia de salida (Cc): 25 pF
Ganancia de corriente contínua (hFE): 100
Encapsulados: TO5
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2N1711 datasheet
2n1711 cnv 2.pdf
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D111 2N1711 NPN medium power transistor 1997 May 28 Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification NPN medium power transistor 2N1711 FEATURES PINNING High current (max. 500 mA) PIN DESCRIPTION Low voltage (max. 50 V). 1 emit
2n1711.pdf
2N1711 EPITAXIAL PLANAR NPN DESCRIPTION The 2N1711 is a silicon Planar Epitaxial NPN transistor in Jedec TO-39 metal case. It is intented for use in high performance amplifier, oscillator and switching circuits. The 2N1711 is also used to advantage in amplifiers where low noise is an important factor. TO-39 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Va
2n1711 .pdf
2N1711 EPITAXIAL PLANAR NPN DESCRIPTION The 2N1711 is a silicon Planar Epitaxial NPN transistor in Jedec TO-39 metal case. It is intented for use in high performance amplifier, oscillator and switching circuits. The 2N1711 is also used to advantage in amplifiers where low noise is an important factor. TO-39 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Va
Otros transistores... 2N1704 , 2N1705 , 2N1706 , 2N1707 , 2N1708 , 2N1708A , 2N1709 , 2N1710 , TIP41 , 2N1711-46 , 2N1711A , 2N1711B , 2N1711L , 2N1711S , 2N1713 , 2N1714 , 2N1715 .
History: 2N5612 | 2N1616 | 2N1678 | 2N1647 | 2N5650
History: 2N5612 | 2N1616 | 2N1678 | 2N1647 | 2N5650
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