2SC1642 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SC1642
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.3 W
Tensión colector-base (Vcb): 25 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 0.15 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 125 MHz
Capacitancia de salida (Cc): 4.5 pF
Ganancia de corriente contínua (hFE): 390
Encapsulados: TO92
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2SC1642 datasheet
2sb852k 2sa830s 2sd1383k 2sc1645s.pdf
2SB852K / 2SA830S Transistors Transistors 2SD1383K / 2SC1645S (96-118-B20) (96-205-D20) 280 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document a
2sc1678.pdf
This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer
2sc1627.pdf
2SC1627 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC1627 Driver Stage Amplifier Applications Unit mm Voltage Amplifier Applications Complementary to 2SA817 Driver stage application of 20 to 25 watts amplifiers. Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 80 V Collector-emitter voltage VCEO
2sc1624 2sc1625.pdf
This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer
2sc1623.pdf
DATA SHEET SILICON TRANSISTOR 2SC1623 AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES PACKAGE DIMENSIONS High DC Current Gain hFE = 200 TYP. in millimeters (VCE = 6.0 V, IC = 1.0 mA) 2.8 0.2 High Voltage VCEO = 50 V 1.5 0.65+0.1 0.15 ABSOLUTE MAXIMUM RATINGS Maximum Voltages and Current (TA = 25 C) 2 Collector to
2sa821s 2sc1651s.pdf
2SA821S Transistors Transistors 2SC1651S (94L-183-A35) (94L-519-C35) 274
2sc1623.pdf
2SC1623 Features Halogen Free. Green Device (Note 1) Moisture Sensitivity Level 1 Epoxy Meets UL 94 V-0 Flammability Rating NPN Silicon Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information) Epitaxial Transistors Maximum Ratings @ 25 C Unless Otherwise Specified Operating Junction Temperature Range -55 to +15
2sc1623-l5-l6-l7.pdf
2SC1623-L5 MCC Micro Commercial Components TM 2SC1623-L6 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2SC1623-L7 Phone (818) 701-4933 Fax (818) 701-4939 Features Halogen free available upon request by adding suffix "-HF" Lead Free Finish/RoHS Compliant ("P" Suffix designates NPN Silicon RoHS Compliant. See ordering information) High DC Cu
2sc1688 e.pdf
Transistor 2SC1688 Silicon NPN epitaxial planer type For high-frequency amplification Unit mm 5.0 0.2 4.0 0.2 Features Small common emitter reverse transfer capacitance Cre. High transition frequency fT. Center at the emitter pin. Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit +0.2 +0.2 0.45 0.1 0.45 0.1 Collector to base voltage VCBO 50 V 1.27 1.27
2sc1654.pdf
2SC1654 0.05A , 180V NPN Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-23 FEATURE High Frequency Power Amplifier Application A L Power Switching Applications 3 3 Top View C B CLASSIFICATION OF hFE(1) 1 1 2 2 K E Product-Rank 2SC1654-N5 2SC1654-N6 2SC1654-N7 Range 90 180 1
2sc1674.pdf
2SC1674 0.02 A , 30 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES TO-92 General Purpose Switching and Amplification G H Emitter Collector Base J CLASSIFICATION OF hFE A D Millimeter REF. Min. Max. Product-Rank 2SC1674-Y 2SC1674-GR 2SC1674-BL B A 4.40 4
2sc1623k.pdf
2SC1623K 0.1A , 60V NPN Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-23 FEATURE High DC current gain hFE=200(Typ), VCE=6V, IC=1mA. A L High Voltage VCEO=50V. 3 3 Top View C B CLASSIFICATION OF hFE 1 1 2 2 K E Product-Rank 2SC1623K-P 2SC1623K-Y 2SC1623K-G 2SC1623K-B Range 90
2sc1675.pdf
2SC1675 0.05 A , 50 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES TO-92 Low Collector Current G H General Purpose Switching and Amplification Emitter Base J Collector A D CLASSIFICATION OF hFE Millimeter B REF. Min. Max. Product-Rank 2SC1675-R 2SC1
2sc1623.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD J C T SOT-23 Plastic-Encapsulate Transistors SOT-23 2SC1623 TRANSISTOR (NPN) FEATURES 1. BASE High DC current gain hFE=200(Typ) VCE=6V,IC=1mA 2. EMITTER High voltage VCEO=50V 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage 60 V CBO V Collector
2sc1674.pdf
Transys Electronics L I M I T E D TO-92 Plastic-Encapsulated Transistors 2SC1674 TRANSISTOR (NPN) TO-92 FEATURE Power dissipation 1. EMITTER PCM 0. 25 W (Tamb=25 ) 2. COLLECTOR Collector current 3. BASE ICM 0.02 A . 1 2 3 Collector-base voltage V(BR)CBO 30 V Operating and storage junction temperature range TJ, Tstg -55 to +150 ELECT
2sc1654.pdf
2SC1654 TRANSISTOR(NPN) SOT 23 FEATURES High Frequency Power Amplifier Application Power Swithing Applications 1. BASE MAXIMUM RATINGS (Ta=25 unless otherwise noted) 2. EMITTER Symbol Parameter Value Unit 3. COLLECTOR V Collector-Base Voltage 180 V CBO V Collector-Emitter Voltage 160 V CEO V Emitter-Base Voltage 5 V EBO IC Collector Current 50 mA PC C
2sc1623.pdf
2SC1623 TRANSISTOR (NPN) FEATURES High DC current gain hFE=200(Typ) VCE=6V,IC=1mA High voltage VCEO=50V MAXIMUM RATINGS (Ta=25 unless otherwise noted) SOT-23 Symbol Parameter Value Unit VCBO 60 V Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 1. BASE VEBO Emitter-Base Voltage 5 V 2. EMITTER 3. COLLECTOR IC Collector Current -Continuous 100 mA
2sc1623.pdf
Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. GM1623 MAXIMUM RATINGS MAXIMUM RATINGS MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Emitter Voltage VCEO 50 Vdc - C
2sc1623 sot-23.pdf
2SC1623 SOT-23 Transistor(NPN) SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features High DC current gain hFE=200(Typ)VCE=6V, IC=1mA High voltage VCEO=50V MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO 60 V Collector-Base Voltage Dimensions in inches and (millimeters) 50 V VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage 5 V I
2sc1627a to-92mod.pdf
2SC1627A TO-92MOD Transistor (NPN) TO-92MOD 1. EMITTER 1 2 2. COLLECTOR 3 3. BASE Features 5.800 6.200 Complementary to 2SA817A 8.400 Driver Stage Application of 30 to 35 Watts Amplifiers 8.800 0.900 1.100 0.400 MAXIMUM RATINGS(TA=25 unless otherwise noted) 0.600 13.800 14.200 Symbol parameter Value Units VCBO 80 V Collector-Base Voltage 1.500 TYP
2sc1675.pdf
2SC1675(NPN) TO-92 Bipolar Transistors TO-92 1. EMITTER 2. BASE 3. COLLECTOR Features 2SC1675 is designed for use in AM converter AM/FM if amplifier and local oscillator of AM/FM tuner MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 30 V Dimensions in inches and (millimeter
2sc1623.pdf
2SC1623 NPN General Purpose Transistors 3 1 P b Lead(Pb)-Free 2 SOT-23 MAXIMUM RATINGS(Ta=25 C) Rating Symbol Value Unit Collector-Emitter Voltage VCEO 50 V VCBO Collector-Base Voltage 60 V VEBO Emitter-Base Voltage 7 V IC Collector Current - Continuous 150 mA Total Device Dissipation FR-5 Board PD 225 mW TA=25 C 1.8 mW/ C Derate above 25 C R JA Thermal Resistance,
2sc1623xlt1.pdf
FM120-M WILLAS 2SC1623xLT1 THRU General Purpose Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Product Package outline Features Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H Low profile surface mounted application in order to optimize b
2sc1623.pdf
Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors SOT-23 2SC1623 TRANSISTOR (NPN) FEATURES 1. BASE High DC current gain hFE=200(Typ)VCE=6V, IC=1mA 2. EMITTER High voltage VCEO=50V 3. COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO 60 V Collector-Base Voltage 50 V VCEO Collector
2sc1623 sot-23.pdf
ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com SOT-23 Plastic-Encapsulate Transistors 2SC1623 TRANSISTOR (NPN) FEATURES High voltage Vceo=50V MARKING L6 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base V
2sc1623t.pdf
2SC1623T(BR3DG1623T) Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-89 NPN Silicon NPN transistor in a SOT-89 Plastic Package. / Features h , V 2SA812T(BR3CG812T) FE CEO, High hFE and VCEO, complementary pair with 2SA812T(BR3CG812T). / Applications Audio frequency general amp
2sc1627af.pdf
2SC1627AF(BR3DG1627AF) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-126F NPN Silicon NPN transistor in a TO-126F Plastic Package. / Features 30 35W 2SA817AF(BR3CG817AF) Driver stage of 30 to 35 watts application, complementary pair with 2SA817AF(BR3CG817AF). / Applications
2sc1623w.pdf
2SC1623W(BR3DG1623W) Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-323 NPN Silicon NPN transistor in a SOT-323 Plastic Package. / Features h , V 2SA812W(BR3CG812W) FE CEO, High hFE and VCEO, complementary pair with 2SA812W(BR3CG812W). / Applications Audio frequency general a
l2sc1623swt1g.pdf
LESHAN RADIO COMPANY, LTD. General Purpose Transistors Pb-Free packkage is available L2SC1623SWT1G DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping 3 L2SC1623SWT1G L7 3000/Tape&Reel 10000/Tape&Reel L2SC1623SWT3G L7 1 2 MAXIMUM RATINGS SC-70 Rating Symbol Value Unit Collector-Emitter Voltage VCEO 50 V Collector-Base Voltage VCBO 60 V 3 COLLECTOR Emitter-Base Volt
l2sc1623qlt1g.pdf
LESHAN RADIO COMPANY, LTD. General Purpose Transistors L2SC1623QLT1G Pb-Free package is available S- Prefix for Automotive and Other Applications Requiring Unique Site Series and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. S-L2SC1623QLT1G Series DEVICE MARKING AND ORDERING INFORMATION 3 Device Marking Shipping L2SC1623QLT1G L5 3000/Tape&Reel S-L2SC1623QLT1G
l2sc1623rlt1g.pdf
LESHAN RADIO COMPANY, LTD. General Purpose Transistors L2SC1623QLT1G Pb-Free package is available S- Prefix for Automotive and Other Applications Requiring Unique Site Series and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. S-L2SC1623QLT1G Series DEVICE MARKING AND ORDERING INFORMATION 3 Device Marking Shipping L2SC1623QLT1G L5 3000/Tape&Reel S-L2SC1623QLT1G
l2sc1623qlt3g l2sc1623rlt3g l2sc1623slt3g l2sc1623qlt1g l2sc1623rlt1g l2sc1623slt1g.pdf
LESHAN RADIO COMPANY, LTD. General Purpose Transistors L2SC1623QLT1G Pb-Free package is available S- Prefix for Automotive and Other Applications Requiring Unique Site Series and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. S-L2SC1623QLT1G Series DEVICE MARKING AND ORDERING INFORMATION 3 Device Marking Shipping L2SC1623QLT1G L5 3000/Tape&Reel S-L2SC1623QLT1G
l2sc1623qlt1g l2sc1623rlt1g l2sc1623slt1g.pdf
LESHAN RADIO COMPANY, LTD. General Purpose Transistors L2SC1623QLT1G Pb-Free package is available S- Prefix for Automotive and Other Applications Requiring Unique Site Series and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. S-L2SC1623QLT1G Series DEVICE MARKING AND ORDERING INFORMATION 3 Device Marking Shipping L2SC1623QLT1G L5 3000/Tape&Reel S-L2SC1623QLT1G
l2sc1623slt1g.pdf
LESHAN RADIO COMPANY, LTD. L2SC1623QLT1G General Purpose Transistors Series Pb-Free package is available S- Prefix for Automotive and Other Applications Requiring Unique Site S-L2SC1623QLT1G and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. Series DEVICE MARKING AND ORDERING INFORMATION 3 Device Marking Shipping L2SC1623QLT1G L5 3000/Tape&Reel S-L2SC1623QLT1
2sc1654.pdf
SMD Type Transistors NPN Transistors 2SC1654 SOT-23 Unit mm +0.1 2.9 -0.1 0.4+0.1 -0.1 3 Features Collector Current Capability IC=50mA 1 2 Collector Emitter Voltage VCEO=160V +0.1 +0.05 0.95 -0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 180 Colle
2sc1653.pdf
SMD Type Transistors NPN Transistors 2SC1653 SOT-23 Unit mm +0.1 2.9 -0.1 0.4+0.1 -0.1 3 Features Collector Current Capability IC=50mA 1 2 Collector Emitter Voltage VCEO=130V +0.1 +0.05 0.95 -0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 150 Colle
2sc1623.pdf
SMD Type Transistors NPN Transistors 2SC1623 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features High DC Current Gain 1 2 hFE = 200 TYP. +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 VCE = 6.0 V, IC = 1.0 mA High Voltage VCE O = 50 V 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector to base voltage VCBO 60 V Colle
2sc1621.pdf
SMD Type Transistors NPN Transistors 2SC1621 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=200mA Collector Emitter Voltage VCEO=20V 1 2 +0.1 0.95-0.1 0.1+0.05 -0.01 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 40 Collect
2sc1623l4 2sc1623l5 2sc1623l6 2sc1623l7.pdf
2SC1623 TRANSISTOR (NPN) TRANSISTOR (NPN) FEATURES High DC current gain hFE=200(Typ) VCE=6V,IC=1mA High voltage VCEO=50V MAXIMUM RATINGS (Ta=25 unless otherwise noted) SOT-23 Symbol Parameter Value Unit VCBO 60 V Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 1. BASE VEBO Emitter-Base Voltage 5 V 2. EMITTER 3. COLLECTOR IC Collector Current -C
2sc1623l4 2sc1623l5 2sc1623l6 2sc1623l7.pdf
R UMW UMW 2SC1623 SOT-23 Plastic-Encapsulate Transistors SOT-23 2SC1623 TRANSISTOR (NPN) FEATURES 1. BASE High DC current gain hFE=200(Typ) VCE=6V,IC=1mA 2. EMITTER High voltage VCEO=50V 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO 60 V Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage VEBO Emitte
2sc1623.pdf
2SC1623 Plastic-Encapsulate Transistors NPN Silicon FEATURES High DC current gain hFE=200(Typ) VCE=6V,IC=1mA High voltage VCEO=50V SOT-23 MAXIMUM RATINGS (Ta=25 unless otherwise noted) 1. BASE Symbol Parameter Value Unit 2. EMITTER 3. COLLECTOR VCBO 60 V Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage 5 V IC Collector Curren
2sc1623.pdf
SOT-23 Plastic-Encapsulate Transistors Formosa MS 2SC1623 TRANSISTOR (NPN) FEATURES High DC current gain hFE=200(Typ) VCE=6V,IC=1mA SOT-23 High voltage VCEO=50V MAXIMUM RATINGS (Ta=25 unless otherwise noted) 1. BASE Symbol Parameter Value Unit 2. EMITTER 3. COLLECTOR VCBO 60 V Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage VEBO Emitter-Base Vol
2sc1623.pdf
2SC1623 SOT-23 Plastic-Encapsulate Transistors 2SC1623 TRANSISTOR (NPN) SOT-23 FEATURES High DC current gain hFE=200(Typ) VCE=6V,IC=1mA High voltage VCEO=50V 1. BASE 2. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) 3. COLLECTOR Symbol Parameter Value Unit V Collector-Base Voltage 60 V CBO V Collector-Emitter Voltage 50 V CEO VEBO Emitter-Base Voltage 5
2sc1623-ms.pdf
www.msksemi.com 2SC1623-MS Semiconductor Compiance Semiconductor Compiance TRANSISTOR (NPN) FEATURES High DC current gain hFE=200(Typ) VCE=6V,IC=1mA 1. BASE High voltage VCEO=50V 2. EMITTER SOT 23 3. COLLECTOR CLASSIFICATION OF hFE Rank L4 L5 L6 L7 Range 90-180 135-270 200-400 300-600 Marking L4 L5 L6 L7 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parame
2sc1623l4-t3 2sc1623l5-t3 2sc1623l6-t3 2sc1623l7-t3.pdf
2SC1623 PLASTIC-ENCAPSULATE TRANSISTORS NPN Silicon FEATURES High DC Current Gain hFE=200(Typ.) VCE=6V, IC=1mA High Voltage VCEO = 50V MECHANICAL DATA Available in SOT-23 Package Solderability MIL-STD-202, Method 208 Full RoHS Compliance ORDERING INFORMATION PART NUMBER PACKAGE SHIPPING MARKING 2SC1623 - -T3 SOT-23 Tape Reel See Classifica
2sc1623-l4 2sc1623-l5 2sc1623-l6 2sc1623-l7.pdf
2SC1623 NPN Transistors 3 Features 2 1.Base High DC Current Gain 2.Emitter hFE = 200 TYP. 1 3.Collector VCE = 6.0 V, IC = 1.0 mA Simplified outline(SOT-23) High Voltage VCE O = 50 V Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector to base voltage VCBO 60 V Collector to emitter voltage VCEO 50 V Emitter to base voltage VEBO 5 V Collector current (D
2sc1623l4 2sc1623l5 2sc1623l6 2sc1623l7.pdf
Jingdao Microelectronics co.LTD 2SC1623 2SC1623 SOT-23 NPN TRANSISTOR 3 FEATURES High DC current gain hFE=200(Typ) VCE=6V,IC=1mA High voltage VCEO=50V 1 2 MAXIMUM RATINGS (Ta=25 unless otherwise noted) 1.BASE Symbol Parameter Value Unit 2.EMITTER 3.COLLECTOR Collector Base Voltage VCBO 60 V Collector Emit
2sc1623-l4 2sc1623-l5 2sc1623-l6 2sc1623-l7.pdf
2SC1623 TRANSISTOR (NPN) FEATURES High DC current gain hFE=200(Typ) VCE=6V,IC=1mA High voltage VCEO=50V MAXIMUM RATINGS (Ta=25 unless otherwise noted) SOT-23 Symbol Parameter Value Unit VCBO 60 V Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 1. BASE VEBO Emitter-Base Voltage 5 V 2. EMITTER 3. COLLECTOR IC Collector Current -Continuous 100 m
2sc1623l4 2sc1623l5 2sc1623l6 2sc1623l7.pdf
2SC1623 SOT 323 TRANSISTOR (NPN) FEATURES High DC current gain hFE=200(Typ)VCE=6V, IC=1mA High voltage VCEO=50V 1. BASE MAXIMUM RATINGS (Ta=25 unless otherwise noted) 2. EMITTER Symbol Parameter Value Unit 3. COLLECTOR VCBO 60 V Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 100 m
2sc1623.pdf
2SC1623 2SC1623 2SC1623 2SC1623 2SC1623 TRANSISTOR(NPN) FEATURE SOT-23 High DC current gain hFE=200(Typ)VCE=6V, IC=1mA 1 BASE High voltage VCEO=50V 2 EMITTER 3 COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Units VCBO 60 V Collector-Base Voltage VCEO 50 V Collector-Emitter Voltage VEBO Emitter-Base Voltage 5 V IC Co
2sc1623-l5 2sc1623-l6 2sc1623-l7.pdf
RoHS RoHS COMPLIANT COMPLIANT 2SC1623 NPN Transistor Features Epoxy meets UL-94 V-0 flammability rating Moisture Sensitivity Level 1 Halogen free available upon request by adding suffix HF Surface mount package ideally Suited for Automatic Insertion NPN Mechanical Data ackage SOT-23 P Terminals Tin plated leads, solderable per
2sc1623w.pdf
1 2SC1623W TRANSISTOR (NPN) FEATURE SOT- 323 High DC current gain h =200(Typ)V =6V, I =1mA FE CE C High voltage V =50V CEO MARKING L6 MAXIMUM RATINGS (T =25 unless otherwise noted) A Symbol Parameter Value Units V CBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V I Collector Current -Continuous 100 mA C P Collector Power
2sc1623.pdf
2SC1623 TRANSISTOR (NPN) FEATURE SOT-23 High DC current gain hFE=200(Typ)VCE=6V, IC=1mA High voltage VCEO=50V 1 BASE 2 EMITTER 3 COLLECTOR MARKING L6 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO 60 V Collector-Base Voltage VCEO 50 V Collector-Emitter Voltage VEBO Emitter-Base Voltage 5 V IC Collector Current -Conti
2sc1623.pdf
2SC1623 BIPOLAR TRANSISTOR (NPN) FEATURES High DC current gain h =200(Typ) V =6V,I =1mA FE CE C High voltage V =50V CEO Surface Mount device Complementary to 2SA812 SOT-23 MECHANICAL DATA Case SOT-23 Case Material Molded Plastic. UL flammability Classification Rating 94V-0 Weight 0.008 grams (approximate) MAXIMUM RATINGS (T = 25 C unless othe
2sc1623-l4 2sc1623-l5 2sc1623-l6 2sc1623-l7.pdf
Features A SOT-23 L6 C Dim Min Max A 0.37 0.51 B C B 1.20 1.40 TOP VIEW B E C D 2.30 2.50 E G D 0.89 1.03 E 0.45 0.60 H G 1.78 2.05 K H 2.80 3.00 Maximum Ratings @ T = 25 C unless otherwise specified A J J 0.013 0.1
2sc1625.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1625 DESCRIPTION Silicon NPN planar type Complementary to 2SA815 High breakdown voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Medium power amplifier applications Driver stage amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 )
2sc1610.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1610 DESCRIPTION With TO-3 Package High voltage Wide area of safe operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage
2sc1624.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1624 DESCRIPTION Silicon NPN planar type Complementary to 2SA814 High breakdown voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Medium power amplifier applications Driver stage amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 )
2sc1683.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1683 DESCRIPTION Silicon NPN triple diffused mesa High breakdown voltage Large collector dissipation Complementary pair with 2SA843 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS AF power amplifier Color TV vertical deflection output ABSO
2sc1678.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1678 DESCRIPTION Silicon NPN planar type High breakdown voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Medium power amplifier applications Driver stage amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE
2sc1626.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1626 DESCRIPTION Silicon NPN planar type Complementary to 2SA816 High breakdown voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Medium power amplifier applications Driver stage amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 )
2sc1617.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1617 DESCRIPTION Silicon NPN triple diffused type High voltage Wide area of safe operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Black and white TV horizontal output applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER
2sc1672.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1672 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 120V(Min) CEO(SUS) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Automotive ignition Switching regulator Motor control applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARA
2sc1624 2sc1625.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1624 2SC1625 DESCRIPTION With TO-220 package Complement to type 2SA814/815 High breakdown voltage APPLICATIONS Medium power amplifier applications Driver stage amplifier applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum
2sc1618.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1618 DESCRIPTION High voltage Wide area of safe operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency output applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage
2sc1609.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1609 DESCRIPTION With TO-3 Package High voltage Wide area of safe operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage
2sc1619.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1619 DESCRIPTION High voltage Wide area of safe operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency output applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage
2sc1667.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1667 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 90V(Min) CEO(SUS) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Automotive ignition Switching regulator Motor control applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAM
2sc1623.pdf
INCHANGE Semiconductor isc Silicon NPN Transistor 2SC1623 DESCRIPTION SOT-23 plastic-encapsulate transistors High DC current gain h =200(TYP) FE @V = 6V, I = 1mA CE C High voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency general purpose amplifier ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMB
Otros transistores... 2SC1635F , 2SC1636 , 2SC1637 , 2SC1638 , 2SC1639 , 2SC164 , 2SC1640 , 2SC1641 , D882P , 2SC1643 , 2SC1644 , 2SC1645 , 2SC1646 , 2SC1647 , 2SC1648 , 2SC1649 , 2SC165 .
History: 2SC1347 | 2SC1658
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Recientemente añadidas las descripciónes de los transistores:
BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550
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