2SC1764 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SC1764
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 140 W
Tensión colector-base (Vcb): 65 V
Tensión colector-emisor (Vce): 35 V
Tensión emisor-base (Veb): 4 V
Corriente del colector DC máxima (Ic): 12 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 25 MHz
Ganancia de corriente contínua (hfe): 10
Paquete / Cubierta: X92
Búsqueda de reemplazo de transistor bipolar 2SC1764
2SC1764 Datasheet (PDF)
2sc1766.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate TransistorsSOT-89-3L 2SC1766 TRANSISTOR (NPN)1. BASEFEATURES 2. COLLECTOR Small Flat Package High Speed Switching Time3. EMITTER Low Collector-emitter saturation voltageAPPLICATIONS Power AmplifierMAXIMUM RATINGS (Ta=25 unless otherwise noted)Symbol Parameter Value UnitVCBO Collector
2sc1766.pdf
2SC1766 SOT-89-3L TRANSISTOR(NPN)FEATURES 1. BASE Small Flat Package2. COLLECTOR High Speed Switching Time Low Collector-emitter saturation voltage 3. EMITTER APPLICATIONS Power AmplifierMAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage
2sc1766.pdf
FM120-M WILLASTHRU2SC1766SOT-89 Plastic-Encapsulate Transistors FM1200-M1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProducPackage outlineFeaturesTRANSISTOR (NPN) Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOT-89 FEATURES SOD-123H Low profile surface
2sc1766gp.pdf
CHENMKO ENTERPRISE CO.,LTD2SC1766GPSMALL FLAT NPN Epitaxial Transistor VOLTAGE 50 Volts CURRENT 2 AmpereAPPLICATION* Power amplifier .FEATURE* Small flat package. (SC-62/SOT-89)SC-62/SOT-89* Low saturation voltage VCE(sat)=-0.5V(max.)(I =-1A) * High speed switching time: tstg= 1.0uSec (typ.)C* PC= 1.0 to 2.0W (mounted on ceramic substrate).4.6MAX. 1.6MAX.* High sat
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
