2SC1820
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SC1820
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 3
W
Tensión colector-base (Vcb): 55
V
Tensión colector-emisor (Vce): 35
V
Tensión emisor-base (Veb): 3
V
Corriente del colector DC máxima (Ic): 0.5
A
Temperatura operativa máxima (Tj): 125
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 85
MHz
Ganancia de corriente contínua (hfe): 50
Paquete / Cubierta:
TO39
Búsqueda de reemplazo de transistor bipolar 2SC1820
2SC1820
Datasheet (PDF)
8.1. Size:69K wingshing
2sc1827.pdf
2SC1827 NPN EPITAXIAL SILICON TRANSISTORLOW FREQUENCY POWER AMPLIFIER TO-220 Complement to 2SA769ABSOLUTE MAXIMUM RATINGS (T =25)ACharacteristic Symbol Rating Unit Collector-Base Voltage VCBO 80 V Collector-Emitter Voltage VCEO 80 V Emitter-Base voltage VEBO 5 V Collector Current (DC) IC 4 A Collector Dissipation (Tc=25 PC 30 W Junctio
8.2. Size:146K jmnic
2sc1827.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC1827 DESCRIPTION With TO-220 package Complement to type 2SA769 Collector current :IC=4A Collector dissipation :PC=30W@TC=25 APPLICATIONS For use in low frequency power amplifier applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO
8.3. Size:179K inchange semiconductor
2sc1828.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1828DESCRIPTIONWith TO-66 PackageLow collector saturation voltageMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for switching and wide-band amplifierapplicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 8
8.4. Size:184K inchange semiconductor
2sc1826.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1826DESCRIPTIONHigh breakdown voltageLarge collector dissipation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSLow frequency power amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Volt
8.5. Size:192K inchange semiconductor
2sc1827.pdf
isc Silicon NPN Power Transistor 2SC1827DESCRIPTIONCollector-Emitter Breakdown Voltage-:V = 80(V)(Min.)(BR)CEOComplement to Type 2SA769Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Volt
Otros transistores... 2SC1815Y
, 2SC1816
, 2SC1816H
, 2SC1817
, 2SC1818
, 2SC1819
, 2SC181H
, 2SC182
, BC557
, 2SC1821
, 2SC1822
, 2SC1823
, 2SC1824
, 2SC1825
, 2SC1826
, 2SC1827
, 2SC1828
.