2SC1849 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SC1849
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.35 W
Tensión colector-base (Vcb): 30 V
Tensión colector-emisor (Vce): 25 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 0.2 A
Temperatura operativa máxima (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 75 MHz
Capacitancia de salida (Cc): 7 pF
Ganancia de corriente contínua (hFE): 150
Encapsulados: TO92
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2SC1849 datasheet
8.6. Size:93K panasonic
2sc1846.pdf 
Power Transistors 2SC1846 Silicon NPN epitaxial planar type For medium output power amplification Unit mm 8.0+0.5 0.1 3.2 0.2 Complementary to 2SA0885 3.16 0.1 Features Low collector-emitter saturation voltage VCE(sat) Output of 3 W can be obtained by a complementary pair with 2SA0885 TO-126B package which requires no insulation plate for installa- tion t
8.7. Size:94K panasonic
2sc1847.pdf
Power Transistors 2SC1847 Silicon NPN epitaxial planar type For medium output power amplification Unit mm 8.0+0.5 0.1 3.2 0.2 Complementary to 2SA0886 3.16 0.1 Features Output of 4 W can be obtained by a complementary pair with 2SA0886 TO-126B package which requires no insulation plate for installa- tion to the heat sink Absolute Maximum Ratings Ta = 25
8.9. Size:180K jmnic
2sc1846.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC1846 DESCRIPTION With TO-126 package Complement to type 2SA885 Low collector saturation APPLICATIONS For medium output power amplification PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute Maximun Ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT V
8.10. Size:178K jmnic
2sc1847.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC1847 DESCRIPTION With TO-126 package Complement to type 2SA886 Low collector saturation APPLICATIONS For medium output power amplification PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute Maximun Ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT V
8.12. Size:853K foshan
2sc1846 3da1846.pdf
2SC1846(3DA1846) NPN /SILICON NPN TRANSISTOR Purpose Medium power amplifier. V , 2SA885(3CA885) 3W CE(sat) Features Low V ,3W output in complementary pair with 2SA885(3CA885). CE(sat) /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 45 V
8.13. Size:163K inchange semiconductor
2sc1848.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1848 DESCRIPTION Silicon NPN epitaxial planar High voltage Complement to Type 2SA887 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for medium power amplifier ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 70 V CB
8.14. Size:189K inchange semiconductor
2sc1846.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1846 DESCRIPTION Silicon NPN epitaxial planar type Low collector to emitter saturation voltage Output of 3W can be obtained by a complementary with 2SA0885 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Suited for medium output power amplifier
8.15. Size:192K inchange semiconductor
2sc1847.pdf
isc Silicon NPN Power Transistor 2SC1847 DESCRIPTION High Collector Current-I = 1.5A C Low Saturation Voltage V = 1V(Max)@ I = 2.0A, I = 0.2A CE(sat) C B Good Linearity of h FE Complement to Type 2SA0886 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Suited for the output stage of 3 watts audio amplifier, voltage regul
Otros transistores... 2SC1841, 2SC1842, 2SC1843, 2SC1844, 2SC1845, 2SC1846, 2SC1847, 2SC1848, 9014, 2SC185, 2SC1850, 2SC1851, 2SC1852, 2SC1853, 2SC1854, 2SC1855, 2SC1856
