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2SC1897 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SC1897
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.6 W
   Tensión colector-base (Vcb): 30 V
   Tensión emisor-base (Veb): 6 V
   Corriente del colector DC máxima (Ic): 1 A
   Temperatura operativa máxima (Tj): 125 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 100 MHz
   Capacitancia de salida (Cc): 20 pF
   Ganancia de corriente contínua (hfe): 200
   Paquete / Cubierta: TO92

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2SC1897 Datasheet (PDF)

 8.1. Size:24K  hitachi
2sc1890.pdf

2SC1897
2SC1897

2SC1890, 2SC1890ASilicon NPN EpitaxialApplication Low frequency high voltage amplifier Complementary pair with 2SA893/AOutlineTO-92 (1)1. Emitter2. Collector3. Base3212SC1890, 2SC1890AAbsolute Maximum Ratings (Ta = 25C)RatingsItem Symbol 2SC1890 2SC1890A UnitCollector to base voltage VCBO 90 120 VCollector to emitter voltage VCEO 90 120 VEmitter to

 8.2. Size:143K  jmnic
2sc1893.pdf

2SC1897
2SC1897

JMnic Product Specification Silicon NPN Power Transistors 2SC1893 DESCRIPTION With TO-3 package High breakdown voltage APPLICATIONS For line-operated horizontal deflection output applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 Emitter3 CollectorFig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=) SYMBOL PARAMETER CONDITIONS VAL

 8.3. Size:143K  jmnic
2sc1894.pdf

2SC1897
2SC1897

JMnic Product Specification Silicon NPN Power Transistors 2SC1894 DESCRIPTION With TO-3 package High breakdown voltage Low collector saturation voltage APPLICATIONS For color TV horizontal output applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 Emitter3 CollectorFig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=) SYMBOL PARAME

 8.4. Size:177K  inchange semiconductor
2sc1893.pdf

2SC1897
2SC1897

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1893DESCRIPTIONWith TO-3 PackageLow collector saturation voltageMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for switching and wide-band amplifierapplicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 15

 8.5. Size:177K  inchange semiconductor
2sc1894.pdf

2SC1897
2SC1897

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1894DESCRIPTIONWith TO-3 PackageLow collector saturation voltageMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for switching and wide-band amplifierapplicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 15

 8.6. Size:177K  inchange semiconductor
2sc1895.pdf

2SC1897
2SC1897

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1895DESCRIPTIONWith TO-3 PackageLow collector saturation voltageMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for switching and wide-band amplifierapplicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 15

Otros transistores... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

 

 
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