2SC1906 Datasheet. Equivalente

 ..1. Size:43K  hitachi
 2sc1906.pdf

2SC1906 Silicon NPN Epitaxial Planar ADE-208-1058 (Z) 1st. Edition Mar. 2001 Application VHF amplifier Mixer, Local oscillator Outline TO-92 (2) 1. Emitter 2. Collector 3. Base 3 2 1 2SC1906 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 30 V Collector to emitter voltage VCEO 19 V Emitter to base voltage VEBO 2V Colle

 ..2. Size:178K  inchange semiconductor
 2sc1906.pdf

INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC1906 DESCRIPTION Low Noise High Gain Bandwidth Product 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in VHF amplifier,mixer and local oscillator. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base V

 8.1. Size:39K  hitachi
 2sc1907.pdf

2SC1907 Silicon NPN Epitaxial Planar Application UHF TV Tuner, Local oscillator Outline TO-92 (2) 1. Emitter 2. Collector 3. Base 3 2 1 2SC1907 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 30 V Collector to emitter voltage VCEO 19 V Emitter to base voltage VEBO 2V Collector current IC 50 mA Emitter current IE 50 mA Collect

 8.2. Size:258K  no
 2sc1908.pdf

 8.3. Size:147K  jmnic
 2sc1905.pdf

JMnic Product Specification Silicon NPN Power Transistors 2SC1905 DESCRIPTION With TO-220C package High breakdown voltage Large collector power dissipation APPLICATIONS Color TV horizontal deflection driver PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE

 8.4. Size:177K  inchange semiconductor
 2sc1907.pdf

INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC1907 DESCRIPTION Low Noise High Gain Bandwidth Product 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for VHF TV tuner and local oscillator applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Vo

 8.5. Size:183K  inchange semiconductor
 2sc1904.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1904 DESCRIPTION Low collector to emitter saturation voltage Output of 1W can be obtained by a complementary with 2SA899 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High frequency power amplification ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMB

 8.6. Size:184K  inchange semiconductor
 2sc1905.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1905 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 300(V)(Min.) (BR)CEO 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for color TV horizontal deflection driver ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V