2SC1952 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SC1952
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 5 W
Tensión colector-base (Vcb): 45 V
Tensión colector-emisor (Vce): 25 V
Tensión emisor-base (Veb): 3 V
Corriente del colector DC máxima (Ic): 0.3 A
Temperatura operativa máxima (Tj): 200 °C
CARACTERÍSTICAS ELÉCTRICAS
Producto de corriente -- ganancia — ancho de banda (ft): 2000 MHz
Capacitancia de salida (Cc): 2 pF
Ganancia de corriente contínua (hfe): 20
Empaquetado / Estuche: TO39
Búsqueda de reemplazo de transistor bipolar 2SC1952
2SC1952 Datasheet (PDF)
4.1. 2sc1959.pdf 
Size:199K _toshiba
2SC1959 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SC1959 Audio Frequency Low Power Amplifier Applications Unit: mm Driver Stage Amplifier Applications Switching Applications • Excellent hFE linearity : h = 25 (min): V = 6 V, I = 400 mA FE (2) CE C • 1 watt amplifier applications. • Complementary to 2SA562TM. Maximum Ratings (Ta = = 25°C) = =
4.2. 2sc1959-gr-o-y.pdf Size:266K _mcc
2SC1959-O MCC Micro Commercial Components TM 2SC1959-Y 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 Phone: (818) 701-4933 2SC1959-GR Fax: (818) 701-4939 Features • Audio frequency low power amplifier applications, driver stage Power Silicon amplifier applications, switching applications • Excellent hFE Linearity: hFE(2) =25(Min.) : VCE=6.0V, IC=400mA
4.3. 2sa914 2sc1953 2sa914.pdf Size:78K _panasonic
4.4. 2sc1959.pdf Size:607K _secos
2SC1959 0.5 A , 35 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURES Excellent hFE Linearity High Transition Frequency Millimeter REF. Min. Max. A 4.40 4.70 B 4.30 4.70 C 12.70 - CLASSIFICATION OF hFE D 3.30 3.81 E 0.36 0.56 Product-Rank 2SC1959-O 2SC1959-
4.5. 2sc1959.pdf Size:297K _lge
2SC1959(NPN) TO-92 Bipolar Transistors 1. EMITTER TO-92 2. COLLECTOR 3. BASE Features Excellent hFE linearlity MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 35 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 5 V IC Collector Current –Continuous 0.5 A PC Collector Power Dissipation 500 mW
4.6. 2sc1959m.pdf Size:715K _blue-rocket-elect
2SC1959M(BR3DG1959M) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions SOT-23 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a SOT-23 Plastic Package. 特征 / Features 极好的 h 特性,与 2SA562M(BR3CG562M)互补。 FE Excellent hFE Linearity, complementary pair with 2SA562M(BR3CG562M). 用途 / Applications 用于音频小功率放大,激励级放大及开
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
