2SC1954 Todos los transistores

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2SC1954 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SC1954

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.45 W

Tensión colector-base (Vcb): 25 V

Tensión colector-emisor (Vce): 20 V

Tensión emisor-base (Veb): 3 V

Corriente del colector DC máxima (Ic): 0.15 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 750 MHz

Capacitancia de salida (Cc): 4 pF

Ganancia de corriente contínua (hfe): 100

Empaquetado / Estuche: TO92

Búsqueda de reemplazo de transistor bipolar 2SC1954

 

2SC1954 Datasheet (PDF)

4.1. 2sc1959-gr-o-y.pdf Size:266K _update

2SC1954
2SC1954

2SC1959-O MCC Micro Commercial Components TM 2SC1959-Y 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 Phone: (818) 701-4933 2SC1959-GR Fax: (818) 701-4939 Features • Audio frequency low power amplifier applications, driver stage Power Silicon amplifier applications, switching applications • Excellent hFE Linearity: hFE(2) =25(Min.) : VCE=6.0V, IC=400mA

4.2. 2sc1959.pdf Size:199K _toshiba

2SC1954
2SC1954

2SC1959 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SC1959 Audio Frequency Low Power Amplifier Applications Unit: mm Driver Stage Amplifier Applications Switching Applications Excellent hFE linearity : h = 25 (min): V = 6 V, I = 400 mA FE (2) CE C 1 watt amplifier applications. Complementary to 2SA562TM. Maximum Ratings (Ta = = 25C) = = Characteri

4.3. 2sc1953 2sa914.pdf Size:78K _panasonic

2SC1954
2SC1954

4.4. 2sc1959.pdf Size:607K _secos

2SC1954
2SC1954

2SC1959 0.5 A , 35 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURES ? Excellent hFE Linearity ? High Transition Frequency Millimeter REF. Min. Max. A 4.40 4.70 B 4.30 4.70 C 12.70 - CLASSIFICATION OF hFE D 3.30 3.81 E 0.36 0.56 Product-Rank 2SC1959-O 2SC1959-Y 2SC19

4.5. 2sc1953.pdf Size:134K _inchange_semiconductor

2SC1954
2SC1954

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1953 DESCRIPTION · ·With TO-126 package ·Complement to type 2SA914 ·High VCEO APPLICATIONS ·For low-frequency power pre-amplification PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute Maximun Ratings (Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT

4.6. 2sc1959.pdf Size:297K _lge

2SC1954
2SC1954

2SC1959(NPN) TO-92 Bipolar Transistors 1. EMITTER TO-92 2. COLLECTOR 3. BASE Features Excellent hFE linearlity MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 35 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 5 V IC Collector Current –Continuous 0.5 A PC Collector Power Dissipation 500 mW

4.7. 2sc1959m.pdf Size:715K _blue-rocket-elect

2SC1954
2SC1954

2SC1959M(BR3DG1959M) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions SOT-23 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a SOT-23 Plastic Package. 特征 / Features 极好的 h 特性,与 2SA562M(BR3CG562M)互补。 FE Excellent hFE Linearity, complementary pair with 2SA562M(BR3CG562M). 用途 / Applications 用于音频小功率放大,激励级放大及开

Otros transistores... 2SC1948-2 , 2SC1948-3 , 2SC1949 , 2SC195 , 2SC1950 , 2SC1951 , 2SC1952 , 2SC1953 , BC548 , 2SC1955 , 2SC1956 , 2SC1957 , 2SC1959 , 2SC1959GR , 2SC1959O , 2SC1959Y , 2SC196 .

 


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