2SC1959 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SC1959  📄📄 

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.5 W

Tensión colector-base (Vcb): 35 V

Tensión colector-emisor (Vce): 30 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 0.5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 150 MHz

Capacitancia de salida (Cc): 14 pF

Ganancia de corriente contínua (hFE): 70

Encapsulados: TO92

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2SC1959 datasheet

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 2sc1959.pdf pdf_icon

2SC1959

2SC1959 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SC1959 Audio Frequency Low Power Amplifier Applications Unit mm Driver Stage Amplifier Applications Switching Applications Excellent hFE linearity h = 25 (min) V = 6 V, I = 400 mA FE (2) CE C 1 watt amplifier applications. Complementary to 2SA562TM. Maximum Ratings (Ta = = 25 C) = =

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2SC1959

2SC1959 0.5 A , 35 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES Excellent hFE Linearity High Transition Frequency Millimeter REF. Min. Max. A 4.40 4.70 B 4.30 4.70 C 12.70 - CLASSIFICATION OF hFE D 3.30 3.81 E 0.36 0.56 Product-Rank 2SC1959-O 2SC1959-

 ..3. Size:297K  lge
 2sc1959.pdf pdf_icon

2SC1959

2SC1959(NPN) TO-92 Bipolar Transistors 1. EMITTER TO-92 2. COLLECTOR 3. BASE Features Excellent hFE linearlity MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 35 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 5 V IC Collector Current Continuous 0.5 A PC Collector Power Dissipation 500 mW

 0.1. Size:266K  mcc
 2sc1959-gr-o-y.pdf pdf_icon

2SC1959

2SC1959-O MCC Micro Commercial Components TM 2SC1959-Y 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 Phone (818) 701-4933 2SC1959-GR Fax (818) 701-4939 Features Audio frequency low power amplifier applications, driver stage Power Silicon amplifier applications, switching applications Excellent hFE Linearity hFE(2) =25(Min.) VCE=6.0V, IC=400mA

MOSTRAR MÁS

Otros transistores... 2SC1950, 2SC1951, 2SC1952, 2SC1953, 2SC1954, 2SC1955, 2SC1956, 2SC1957, C1815, 2SC1959GR, 2SC1959O, 2SC1959Y, 2SC196, 2SC1960, 2SC1961, 2SC1962, 2SC1963