2SC2009
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SC2009
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.25
W
Tensión colector-base (Vcb): 35
V
Tensión colector-emisor (Vce): 35
V
Tensión emisor-base (Veb): 3
V
Corriente del colector DC máxima (Ic): 0.1
A
Temperatura operativa máxima (Tj): 100
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 275
MHz
Capacitancia de salida (Cc): 2.8
pF
Ganancia de corriente contínua (hfe): 20
Paquete / Cubierta:
TO92
Búsqueda de reemplazo de 2SC2009
-
Selección ⓘ de transistores por parámetros
2SC2009
Datasheet (PDF)
8.5. Size:212K mcc
2sc2001-m.pdf 
MCC2SC2001-MMicro Commercial ComponentsTM20736 Marilla Street ChatsworthMicro Commercial Components2SC2001-LCA 91311Phone: (818) 701-49332SC2001-KFax: (818) 701-4939Features Capable of 0.6Watts of Power Dissipation. NPN Silicon Collector-current 0. 7APlastic-Encapsulate Collector-base Voltage 30V Operating and storage junction temperature range: -55
8.6. Size:212K mcc
2sc2001-l.pdf
MCC2SC2001-MMicro Commercial ComponentsTM20736 Marilla Street ChatsworthMicro Commercial Components2SC2001-LCA 91311Phone: (818) 701-49332SC2001-KFax: (818) 701-4939Features Capable of 0.6Watts of Power Dissipation. NPN Silicon Collector-current 0. 7APlastic-Encapsulate Collector-base Voltage 30V Operating and storage junction temperature range: -55
8.7. Size:212K mcc
2sc2001-k.pdf
MCC2SC2001-MMicro Commercial ComponentsTM20736 Marilla Street ChatsworthMicro Commercial Components2SC2001-LCA 91311Phone: (818) 701-49332SC2001-KFax: (818) 701-4939Features Capable of 0.6Watts of Power Dissipation. NPN Silicon Collector-current 0. 7APlastic-Encapsulate Collector-base Voltage 30V Operating and storage junction temperature range: -55
8.9. Size:473K secos
2sc2001.pdf
2SC2001 0.7 A , 30 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES High hFE and low VCE(sat) G HhFE(IC=100mA)200(Typ) VCE(sat)(700mA)0.2V(Typ) EmitterJCollectorBase A DCLASSIFICATION OF hFE Millimeter BREF.Product-Rank 2SC2001-M 2S
8.10. Size:797K jiangsu
2sc2001.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SC2001 TRANSISTOR (NPN) TO-92 FEATURES High hFE and Low VCE(sat) hFE(IC=100mA) : 200(Typ) 1. EMITTER VCE(sat)(700mA): 0.2V (Typ) 2. COLLECTOR 3. BASE Equivalent Circuit C2001=Device code Solid dot=Green molding compound device, XXX if none,the normal dev
8.11. Size:226K lge
2sc2001.pdf
2SC2001(NPN)TO-92 Bipolar TransistorsTO-92 1. EMITTER 2. COLLECTOR 3. BASE Features High hFE and low VCE(sat) hFE(IC=100mA) : 200(Typ) VCE(sat)(700mA): 0.2V (Typ) Dimensions in inches and (millimeters)MAXIMUM RATINGS(TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 30 VVCEO Collector-Emitter Voltage 25 VVEBO Emitter-Base V
Otros transistores... 2SC1999
, 2SC20
, 2SC200
, 2SC2000
, 2SC2001
, 2SC2002
, 2SC2003
, 2SC2008
, D880
, 2SC201
, 2SC2010
, 2SC2011
, 2SC2012
, 2SC2013
, 2SC2014
, 2SC2017
, 2SC2018
.
History: 2SD961
| IMT4FRA
