2SC201 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

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Ordering number:EN462ENPN Epitaxial Planar Silicon Transistor2SC207827MHz RF Power Amplifier ApplicationsPackage Dimensionsunit:mm2010C[2SC2078]1 : BaseJEDEC : TO-220AB2 : CollectorEIAJ : SC-463 : EmitterSpecificationsAbsolute Maximum Ratings at Ta = 25CParameter Symbol Conditions Ratings UnitCollector-to-Base Voltage VCBO 80 VCollector-to-Emitter Voltage VCE

2SC5659 / 2SC4618 / 2SC4098 /Transistors 2SC2413 / 2SC2058SHigh-frequency Amplifier Transistor(25V, 50mA, 300MHz)2SC5659 / 2SC4618 / 2SC4098 / 2SC2413K /2SC2058S Features External dimensions (Units : mm)1) Low collector capacitance. (Cob : Typ. 1.3pF)2SC56591.22) Low rbb, high gain, and excellent noise characteristics.0.2 0.8 0.2(2)(3)(1)(1) Base Absolute maximum

MCC2SC2001-MMicro Commercial ComponentsTM20736 Marilla Street ChatsworthMicro Commercial Components2SC2001-LCA 91311Phone: (818) 701-49332SC2001-KFax: (818) 701-4939Features Capable of 0.6Watts of Power Dissipation. NPN Silicon Collector-current 0. 7APlastic-Encapsulate Collector-base Voltage 30V Operating and storage junction temperature range: -55

MCC2SC2001-MMicro Commercial ComponentsTM20736 Marilla Street ChatsworthMicro Commercial Components2SC2001-LCA 91311Phone: (818) 701-49332SC2001-KFax: (818) 701-4939Features Capable of 0.6Watts of Power Dissipation. NPN Silicon Collector-current 0. 7APlastic-Encapsulate Collector-base Voltage 30V Operating and storage junction temperature range: -55

MCC2SC2001-MMicro Commercial ComponentsTM20736 Marilla Street ChatsworthMicro Commercial Components2SC2001-LCA 91311Phone: (818) 701-49332SC2001-KFax: (818) 701-4939Features Capable of 0.6Watts of Power Dissipation. NPN Silicon Collector-current 0. 7APlastic-Encapsulate Collector-base Voltage 30V Operating and storage junction temperature range: -55

2SC2001 0.7 A , 30 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES High hFE and low VCE(sat) G HhFE(IC=100mA)200(Typ) VCE(sat)(700mA)0.2V(Typ) EmitterJCollectorBase A DCLASSIFICATION OF hFE Millimeter BREF.Product-Rank 2SC2001-M 2S

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220-3L Plastic-Encapsulate Transistors 2SC2073 TRANSISTOR (NPN) TO-220-3L1. BASE FEATURES 2. COLLECTOR Wide safe Operating Area. 3. EMITTER Complementary to 2SA940 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Paramenter Value UnitVCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 150

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate Transistors J C T 2SC2060 TRANSISTOR (NPN) TO-92L FEATURE 1. EMITTER Power Dissipation PCM: 0.75 W (Ta=25) 2. COLLECTOR Low Saturation Voltage (VCE(sat)=0.15V at 500mA) Complementary Pair with 2SA934 3. BASE MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SC2001 TRANSISTOR (NPN) TO-92 FEATURES High hFE and Low VCE(sat) hFE(IC=100mA) : 200(Typ) 1. EMITTER VCE(sat)(700mA): 0.2V (Typ) 2. COLLECTOR 3. BASE Equivalent Circuit C2001=Device code Solid dot=Green molding compound device, XXX if none,the normal dev

2SC2023Silicon NPN Triple Diffused Planar TransistorApplication : Series Regulator, Switch, and General Purpose Electrical Characteristics External Dimensions MT-25(TO220) Absolute maximum ratings (Ta=25C) (Ta=25C)Symbol 2SC2023 Symbol Conditions 2SC2023Unit Unit0.24.80.210.20.12.0VCBO 300 ICBO VCB=300V 1.0maxV mAVCEO 300 IEBO VEB=6V 1.0maxV mAVEBO 6

2SC2073(NPN) TO-220 TransistorTO-2201. BASE 2. COLLECTOR 3. EMITTER 3 21Features Wide safe Operating Area. Complementary to 2SA940 MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters)Symbol Paramenter Value UnitsVCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 150 V VEBO Emitter-Base Voltage 5 V IC C

2SC2060 TO-92MOD Transistor (NPN)TO-92MOD1. EMITTER 1 22. COLLECTOR 3 3. BASE 5.8006.200Features8.400 Power dissipation PCM: 0.75 W (Tamb=25) 8.800 Low saturation voltage (VCE(sat)=0.15V at 500mA) 0.9001.100Complementary pair with 2SA934 0.4000.60013.80014.2001.500 TYPMAXIMUM RATINGS* TA=25 unless otherwise noted 2.900Dimensions in i

2SC2060 TO-92L Transistor (NPN)TO-92L1. EMITTER 2. COLLECTOR 3. BASE 4.7005.100 2 3 1Features7.8008.200 Power dissipation PCM: 0.75 W (Tamb=25) Low saturation voltage (VCE(sat)=0.15V at 500mA) 0.6000.800Complementary pair with 2SA934 0.3500.55013.800MAXIMUM RATINGS (TA=25 unless otherwise noted) 14.200Symbol Parameter Value UnitsVCBO

2SC2001(NPN)TO-92 Bipolar TransistorsTO-92 1. EMITTER 2. COLLECTOR 3. BASE Features High hFE and low VCE(sat) hFE(IC=100mA) : 200(Typ) VCE(sat)(700mA): 0.2V (Typ) Dimensions in inches and (millimeters)MAXIMUM RATINGS(TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 30 VVCEO Collector-Emitter Voltage 25 VVEBO Emitter-Base V

ST 2SC2073U NPN Silicon Epitaxial Planar Transistor General purpose amplifier and high voltage application Absolute Maximum Ratings (Ta = 25) Parameter Symbol Value Unit Collector Base Voltage VCBO 160 V Collector Emitter Voltage VCEO 160 V Emitter Base Voltage VEBO 7 V Collector Current IC 1 APeak Collector Current (Single pulse, tp = 300 s) ICP 2 A0.5 Ptot W To

2SC2073A(3DA2073A) NPN /SILICON NPN TRANSISTOR : Purpose: Power amplifier applications, vertical output applications. :, 2SA940A(3CA940A) Features: Wide Safe Operating Area, complementary to 2SA940A(3CA940A). /Absolute maximum ratings(Ta=25)

2SC2073(3DA2073) NPN /SILICON NPN TRANSISTOR : Purpose: Power amplifier applications, vertical output applications. :, 2SA940(3CA940) Features: Wide Safe Operating Area, complementary to 2SA940(3CA940). /Absolute maximum ratings(Ta=25)

2SC2078Silicon NPN POWER TRANSISTORDESCRIPTIONB FSEATINGT PLANEC 4Designed primarily for SSB linear powerTSamplifier applicationsAQ1 2 3HFEATURESUKZ Specified 12.5V, 27MHz CharacteristicsL PO = 4W PEPV ft = 200 MHzSTYLE 1:RGPIN 1. BASE2. COLLECTORJD3. EMITTERN4. COLLECTORDIMENSIONSUNIT A B C D F G H J K L N Q R

2SC2073NPN / Descriptions TO-220 NPN Silicon NPN transistor in a TO-220 Plastic Package. / Features PIN1Base , 2SA940 1 PIN 2Collector 2 3 Wide Safe Operating Area, complementary to 2SA940. PIN 3Emitter / Applications

2SC2073Silicon NPN transistor / Descriptions TO-220 NPN Silicon NPN transistor in a TO-220 Plastic Package. / Features PIN1Base , 2SA940 1 PIN 2Collector 2 3Wide Safe Operating Area, complementary to 2SA940. PIN 3Emitter / Applications

2SC2073T1TLSilicon NPN Power TransistorDESCRIPTIONCollector-Emitter Breakdown Voltage-:V = 150V(Min)(BR)CEOWide Area of Safe OperationComplement to Type 2SA940APPLICATIONSPower amplifier applications.Vertical output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 150 VCBOV Collector-Emitter Voltage 150

SPTECH Product SpecificationSPTECH Silicon NPN Power Transistor 2SC2073DESCRIPTIONCollector-Emitter Breakdown Voltage-:V = 150V(Min)(BR)CEOWide Area of Safe OperationComplement to Type 2SA940APPLICATIONSPower amplifier applications.Vertical output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 150 VCBO

isc Silicon NPN Power Transistor 2SC2073DESCRIPTIONCollector-Emitter Breakdown Voltage-:V = 150V(Min)(BR)CEOWide Area of Safe OperationComplement to Type 2SA940Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applications.Vertical output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARA

isc Silicon NPN Power Transistor 2SC2075DESCRIPTIONHigh transition frequencyWide area of safe operationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONS27MHz Power Amplifier ApplicationsRecommended for output stage applicationof AM 4W transmitterABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collect

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC2022DESCRIPTIONCollector-Emitter Breakdown Voltage-:V = 300(V)(Min.)(BR)CEO100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSeries regulator,switch and general purpose applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UN

isc Silicon NPN Power Transistors 2SC2085DESCRIPTIONCollector-Base Breakdown Voltage-: V = 300V(Min.)(BR)CBOLarge collector power dissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONS1W output in class-A operationLine-operated AF amplifier chrominance outputABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC2023DESCRIPTIONSilicon NPN triple diffused planar transistorCollector-Emitter Breakdown Voltage-:V = 300(V)(Min.)(BR)CEO100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSeries regulator,switch and general purpose applicationsABSOLUTE MAXIMU

INCHANGE Semiconductorisc Silicon NPN RF Transistor 2SC2026DESCRIPTIONLow NoiseNF= 3.0dB TYP. @ f= 500MHzHigh Power GainG = 15dB TYP. @ f= 500MHzpeHigh Gain Bandwidth Productf = 2.0GHz TYP.T100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in low noise amplifiers in the VHF

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2078 DESCRIPTION Collector-Emitter Voltage- :VCER= 75V(Min) ;RBE=150 Collector Current- :IC=3A APPLICATIONS 27MHz RF Power Amplifier Applications ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNITVCBO Collector-Base Voltage 80 V VCER Collector-Emitter Voltage RBE=15

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC2027DESCRIPTIONWith TO-3 PackageLow collector saturation voltageMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for color TV horizontal deflection driverABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1500 VCBO

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC2028DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 50V(Min)(BR)CEOGood Linearity of hFE100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low-frequency power amplificationABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC2098DESCRIPTIONSilicon NPN epitaxial planar100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSThe 2SC2098 is designed for 25=50MHz AF power amplifierapplicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Vo