2SC2011 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SC2011
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.25 W
Tensión colector-base (Vcb): 30 V
Tensión emisor-base (Veb): 3 V
Corriente del colector DC máxima (Ic): 0.05 A
Temperatura operativa máxima (Tj): 100 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 300 MHz
Capacitancia de salida (Cc): 1.3 pF
Ganancia de corriente contínua (hFE): 50
Encapsulados: TO92
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2SC2011 datasheet
2sc2075.pdf
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2sc2068.pdf
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2sc2036.pdf
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2sc2078.pdf
Ordering number EN462E NPN Epitaxial Planar Silicon Transistor 2SC2078 27MHz RF Power Amplifier Applications Package Dimensions unit mm 2010C [2SC2078] 1 Base JEDEC TO-220AB 2 Collector EIAJ SC-46 3 Emitter Specifications Absolute Maximum Ratings at Ta = 25 C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 80 V Collector-to-Emitter Voltage VCE
2sc2058s.pdf
2SC5659 / 2SC4618 / 2SC4098 / Transistors 2SC2413 / 2SC2058S High-frequency Amplifier Transistor (25V, 50mA, 300MHz) 2SC5659 / 2SC4618 / 2SC4098 / 2SC2413K / 2SC2058S Features External dimensions (Units mm) 1) Low collector capacitance. (Cob Typ. 1.3pF) 2SC5659 1.2 2) Low rbb, high gain, and excellent noise characteristics. 0.2 0.8 0.2 (2) (3) (1) (1) Base Absolute maximum
2sc2001-m.pdf
MCC 2SC2001-M Micro Commercial Components TM 20736 Marilla Street Chatsworth Micro Commercial Components 2SC2001-L CA 91311 Phone (818) 701-4933 2SC2001-K Fax (818) 701-4939 Features Capable of 0.6Watts of Power Dissipation. NPN Silicon Collector-current 0. 7A Plastic-Encapsulate Collector-base Voltage 30V Operating and storage junction temperature range -55
2sc2001-l.pdf
MCC 2SC2001-M Micro Commercial Components TM 20736 Marilla Street Chatsworth Micro Commercial Components 2SC2001-L CA 91311 Phone (818) 701-4933 2SC2001-K Fax (818) 701-4939 Features Capable of 0.6Watts of Power Dissipation. NPN Silicon Collector-current 0. 7A Plastic-Encapsulate Collector-base Voltage 30V Operating and storage junction temperature range -55
2sc2001-k.pdf
MCC 2SC2001-M Micro Commercial Components TM 20736 Marilla Street Chatsworth Micro Commercial Components 2SC2001-L CA 91311 Phone (818) 701-4933 2SC2001-K Fax (818) 701-4939 Features Capable of 0.6Watts of Power Dissipation. NPN Silicon Collector-current 0. 7A Plastic-Encapsulate Collector-base Voltage 30V Operating and storage junction temperature range -55
2sc2001.pdf
2SC2001 0.7 A , 30 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES High hFE and low VCE(sat) G H hFE(IC=100mA) 200(Typ) VCE(sat)(700mA) 0.2V(Typ) Emitter J Collector Base A D CLASSIFICATION OF hFE Millimeter B REF. Product-Rank 2SC2001-M 2S
2sc2073.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220-3L Plastic-Encapsulate Transistors 2SC2073 TRANSISTOR (NPN) TO-220-3L 1. BASE FEATURES 2. COLLECTOR Wide safe Operating Area. 3. EMITTER Complementary to 2SA940 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Paramenter Value Unit VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 150
2sc2060.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate Transistors J C T 2SC2060 TRANSISTOR (NPN) TO-92L FEATURE 1. EMITTER Power Dissipation PCM 0.75 W (Ta=25 ) 2. COLLECTOR Low Saturation Voltage (VCE(sat)=0.15V at 500mA) Complementary Pair with 2SA934 3. BASE MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value
2sc2001.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SC2001 TRANSISTOR (NPN) TO-92 FEATURES High hFE and Low VCE(sat) hFE(IC=100mA) 200(Typ) 1. EMITTER VCE(sat)(700mA) 0.2V (Typ) 2. COLLECTOR 3. BASE Equivalent Circuit C2001=Device code Solid dot=Green molding compound device, XXX if none,the normal dev
2sc2023.pdf
2SC2023 Silicon NPN Triple Diffused Planar Transistor Application Series Regulator, Switch, and General Purpose Electrical Characteristics External Dimensions MT-25(TO220) Absolute maximum ratings (Ta=25 C) (Ta=25 C) Symbol 2SC2023 Symbol Conditions 2SC2023 Unit Unit 0.2 4.8 0.2 10.2 0.1 2.0 VCBO 300 ICBO VCB=300V 1.0max V mA VCEO 300 IEBO VEB=6V 1.0max V mA VEBO 6
2sc2073.pdf
2SC2073(NPN) TO-220 Transistor TO-220 1. BASE 2. COLLECTOR 3. EMITTER 3 2 1 Features Wide safe Operating Area. Complementary to 2SA940 MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters) Symbol Paramenter Value Units VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 150 V VEBO Emitter-Base Voltage 5 V IC C
2sc2060 to-92mod.pdf
2SC2060 TO-92MOD Transistor (NPN) TO-92MOD 1. EMITTER 1 2 2. COLLECTOR 3 3. BASE 5.800 6.200 Features 8.400 Power dissipation PCM 0.75 W (Tamb=25 ) 8.800 Low saturation voltage (VCE(sat)=0.15V at 500mA) 0.900 1.100 Complementary pair with 2SA934 0.400 0.600 13.800 14.200 1.500 TYP MAXIMUM RATINGS* TA=25 unless otherwise noted 2.900 Dimensions in i
2sc2060.pdf
2SC2060 TO-92L Transistor (NPN) TO-92L 1. EMITTER 2. COLLECTOR 3. BASE 4.700 5.100 2 3 1 Features 7.800 8.200 Power dissipation PCM 0.75 W (Tamb=25 ) Low saturation voltage (VCE(sat)=0.15V at 500mA) 0.600 0.800 Complementary pair with 2SA934 0.350 0.550 13.800 MAXIMUM RATINGS (TA=25 unless otherwise noted) 14.200 Symbol Parameter Value Units VCBO
2sc2001.pdf
2SC2001(NPN) TO-92 Bipolar Transistors TO-92 1. EMITTER 2. COLLECTOR 3. BASE Features High hFE and low VCE(sat) hFE(IC=100mA) 200(Typ) VCE(sat)(700mA) 0.2V (Typ) Dimensions in inches and (millimeters) MAXIMUM RATINGS(TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base V
st2sc2073u.pdf
ST 2SC2073U NPN Silicon Epitaxial Planar Transistor General purpose amplifier and high voltage application Absolute Maximum Ratings (Ta = 25 ) Parameter Symbol Value Unit Collector Base Voltage VCBO 160 V Collector Emitter Voltage VCEO 160 V Emitter Base Voltage VEBO 7 V Collector Current IC 1 A Peak Collector Current (Single pulse, tp = 300 s) ICP 2 A 0.5 Ptot W To
2sc2073 3da2073.pdf
2SC2073(3DA2073) NPN /SILICON NPN TRANSISTOR Purpose Power amplifier applications, vertical output applications. , 2SA940(3CA940) Features Wide Safe Operating Area, complementary to 2SA940(3CA940). /Absolute maximum ratings(Ta=25 )
2sc2078b 2sc1815c 2sc1815d 2sc1815e.pdf
2SC2078 Silicon NPN POWER TRANSISTOR DESCRIPTION B F SEATING T PLANE C 4 Designed primarily for SSB linear power T S amplifier applications A Q 1 2 3 H FEATURES U K Z Specified 12.5V, 27MHz Characteristics L PO = 4W PEP V ft = 200 MHz STYLE 1 R G PIN 1. BASE 2. COLLECTOR J D 3. EMITTER N 4. COLLECTOR DIMENSIONS UNIT A B C D F G H J K L N Q R
2sc2073.pdf
2SC2073 NPN / Descriptions TO-220 NPN Silicon NPN transistor in a TO-220 Plastic Package. / Features PIN1 Base , 2SA940 1 PIN 2 Collector 2 3 Wide Safe Operating Area, complementary to 2SA940. PIN 3 Emitter / Applications
2sc2073.pdf
2SC2073 Silicon NPN transistor / Descriptions TO-220 NPN Silicon NPN transistor in a TO-220 Plastic Package. / Features PIN1 Base , 2SA940 1 PIN 2 Collector 2 3 Wide Safe Operating Area, complementary to 2SA940. PIN 3 Emitter / Applications
2sc2073t1tl.pdf
2SC2073T1TL Silicon NPN Power Transistor DESCRIPTION Collector-Emitter Breakdown Voltage- V = 150V(Min) (BR)CEO Wide Area of Safe Operation Complement to Type 2SA940 APPLICATIONS Power amplifier applications. Vertical output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 150 V CBO V Collector-Emitter Voltage 150
2sc2073.pdf
SPTECH Product Specification SPTECH Silicon NPN Power Transistor 2SC2073 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 150V(Min) (BR)CEO Wide Area of Safe Operation Complement to Type 2SA940 APPLICATIONS Power amplifier applications. Vertical output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 150 V CBO
2sc2073.pdf
isc Silicon NPN Power Transistor 2SC2073 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 150V(Min) (BR)CEO Wide Area of Safe Operation Complement to Type 2SA940 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications. Vertical output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARA
2sc2075.pdf
isc Silicon NPN Power Transistor 2SC2075 DESCRIPTION High transition frequency Wide area of safe operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS 27MHz Power Amplifier Applications Recommended for output stage application of AM 4W transmitter ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collect
2sc2022.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2022 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 300(V)(Min.) (BR)CEO 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Series regulator,switch and general purpose applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UN
2sc2085.pdf
isc Silicon NPN Power Transistors 2SC2085 DESCRIPTION Collector-Base Breakdown Voltage- V = 300V(Min.) (BR)CBO Large collector power dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS 1W output in class-A operation Line-operated AF amplifier chrominance output ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER
2sc2023.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2023 DESCRIPTION Silicon NPN triple diffused planar transistor Collector-Emitter Breakdown Voltage- V = 300(V)(Min.) (BR)CEO 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Series regulator,switch and general purpose applications ABSOLUTE MAXIMU
2sc2026.pdf
INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC2026 DESCRIPTION Low Noise NF= 3.0dB TYP. @ f= 500MHz High Power Gain G = 15dB TYP. @ f= 500MHz pe High Gain Bandwidth Product f = 2.0GHz TYP. T 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in low noise amplifiers in the VHF
2sc2078.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2078 DESCRIPTION Collector-Emitter Voltage- VCER= 75V(Min) ;RBE=150 Collector Current- IC=3A APPLICATIONS 27MHz RF Power Amplifier Applications ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCER Collector-Emitter Voltage RBE=15
2sc2027.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2027 DESCRIPTION With TO-3 Package Low collector saturation voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Designed for color TV horizontal deflection driver ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1500 V CBO
2sc2028.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2028 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 50V(Min) (BR)CEO Good Linearity of h FE 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low-frequency power amplification ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL
2sc2098.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2098 DESCRIPTION Silicon NPN epitaxial planar 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS The 2SC2098 is designed for 25=50MHz AF power amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Vo
Otros transistores... 2SC2000 , 2SC2001 , 2SC2002 , 2SC2003 , 2SC2008 , 2SC2009 , 2SC201 , 2SC2010 , NJW0281G , 2SC2012 , 2SC2013 , 2SC2014 , 2SC2017 , 2SC2018 , 2SC2019 , 2SC202 , 2SC2020 .
History: MA887 | BSR41 | 2SA1317U
History: MA887 | BSR41 | 2SA1317U
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