2SC2071 Todos los transistores

 8.1. Size:152K  toshiba
 2sc2075.pdf

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

 8.2. Size:154K  toshiba
 2sc2073a.pdf

 8.3. Size:111K  sanyo
 2sc2078.pdf

Ordering number EN462E NPN Epitaxial Planar Silicon Transistor 2SC2078 27MHz RF Power Amplifier Applications Package Dimensions unit mm 2010C [2SC2078] 1 Base JEDEC TO-220AB 2 Collector EIAJ SC-46 3 Emitter Specifications Absolute Maximum Ratings at Ta = 25 C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 80 V Collector-to-Emitter Voltage VCE

 8.4. Size:57K  no
 2sc2076.pdf

 8.5. Size:502K  jiangsu
 2sc2073.pdf

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220-3L Plastic-Encapsulate Transistors 2SC2073 TRANSISTOR (NPN) TO-220-3L 1. BASE FEATURES 2. COLLECTOR Wide safe Operating Area. 3. EMITTER Complementary to 2SA940 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Paramenter Value Unit VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 150

 8.6. Size:218K  lge
 2sc2073.pdf

2SC2073(NPN) TO-220 Transistor TO-220 1. BASE 2. COLLECTOR 3. EMITTER 3 2 1 Features Wide safe Operating Area. Complementary to 2SA940 MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters) Symbol Paramenter Value Units VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 150 V VEBO Emitter-Base Voltage 5 V IC C

 8.7. Size:632K  semtech
 st2sc2073u.pdf

ST 2SC2073U NPN Silicon Epitaxial Planar Transistor General purpose amplifier and high voltage application Absolute Maximum Ratings (Ta = 25 ) Parameter Symbol Value Unit Collector Base Voltage VCBO 160 V Collector Emitter Voltage VCEO 160 V Emitter Base Voltage VEBO 7 V Collector Current IC 1 A Peak Collector Current (Single pulse, tp = 300 s) ICP 2 A 0.5 Ptot W To

 8.8. Size:221K  foshan
 2sc2073a 3da2073a.pdf

 8.9. Size:215K  foshan
 2sc2073 3da2073.pdf

2SC2073(3DA2073) NPN /SILICON NPN TRANSISTOR Purpose Power amplifier applications, vertical output applications. , 2SA940(3CA940) Features Wide Safe Operating Area, complementary to 2SA940(3CA940). /Absolute maximum ratings(Ta=25 )

 8.10. Size:521K  slkor
 2sc2078b 2sc1815c 2sc1815d 2sc1815e.pdf

2SC2078 Silicon NPN POWER TRANSISTOR DESCRIPTION B F SEATING T PLANE C 4 Designed primarily for SSB linear power T S amplifier applications A Q 1 2 3 H FEATURES U K Z Specified 12.5V, 27MHz Characteristics L PO = 4W PEP V ft = 200 MHz STYLE 1 R G PIN 1. BASE 2. COLLECTOR J D 3. EMITTER N 4. COLLECTOR DIMENSIONS UNIT A B C D F G H J K L N Q R

 8.11. Size:1725K  jsmsemi
 2sc2073.pdf

2SC2073 NPN / Descriptions TO-220 NPN Silicon NPN transistor in a TO-220 Plastic Package. / Features PIN1 Base , 2SA940 1 PIN 2 Collector 2 3 Wide Safe Operating Area, complementary to 2SA940. PIN 3 Emitter / Applications

 8.12. Size:856K  cn evvo
 2sc2073.pdf

2SC2073 Silicon NPN transistor / Descriptions TO-220 NPN Silicon NPN transistor in a TO-220 Plastic Package. / Features PIN1 Base , 2SA940 1 PIN 2 Collector 2 3 Wide Safe Operating Area, complementary to 2SA940. PIN 3 Emitter / Applications

 8.13. Size:1293K  cn sps
 2sc2073t1tl.pdf

2SC2073T1TL Silicon NPN Power Transistor DESCRIPTION Collector-Emitter Breakdown Voltage- V = 150V(Min) (BR)CEO Wide Area of Safe Operation Complement to Type 2SA940 APPLICATIONS Power amplifier applications. Vertical output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 150 V CBO V Collector-Emitter Voltage 150

 8.14. Size:421K  cn sptech
 2sc2073.pdf

SPTECH Product Specification SPTECH Silicon NPN Power Transistor 2SC2073 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 150V(Min) (BR)CEO Wide Area of Safe Operation Complement to Type 2SA940 APPLICATIONS Power amplifier applications. Vertical output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 150 V CBO

 8.15. Size:192K  inchange semiconductor
 2sc2073.pdf

isc Silicon NPN Power Transistor 2SC2073 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 150V(Min) (BR)CEO Wide Area of Safe Operation Complement to Type 2SA940 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications. Vertical output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARA

 8.16. Size:192K  inchange semiconductor
 2sc2075.pdf

isc Silicon NPN Power Transistor 2SC2075 DESCRIPTION High transition frequency Wide area of safe operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS 27MHz Power Amplifier Applications Recommended for output stage application of AM 4W transmitter ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collect

 8.17. Size:239K  inchange semiconductor
 2sc2078.pdf

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2078 DESCRIPTION Collector-Emitter Voltage- VCER= 75V(Min) ;RBE=150 Collector Current- IC=3A APPLICATIONS 27MHz RF Power Amplifier Applications ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCER Collector-Emitter Voltage RBE=15