2SC2073 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

 ..1. Size:502K  jiangsu
 2sc2073.pdf

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220-3L Plastic-Encapsulate Transistors 2SC2073 TRANSISTOR (NPN) TO-220-3L1. BASE FEATURES 2. COLLECTOR Wide safe Operating Area. 3. EMITTER Complementary to 2SA940 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Paramenter Value UnitVCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 150

 ..2. Size:218K  lge
 2sc2073.pdf

2SC2073(NPN) TO-220 TransistorTO-2201. BASE 2. COLLECTOR 3. EMITTER 3 21Features Wide safe Operating Area. Complementary to 2SA940 MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters)Symbol Paramenter Value UnitsVCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 150 V VEBO Emitter-Base Voltage 5 V IC C

 ..3. Size:215K  foshan
 2sc2073 3da2073.pdf

2SC2073(3DA2073) NPN /SILICON NPN TRANSISTOR : Purpose: Power amplifier applications, vertical output applications. :, 2SA940(3CA940) Features: Wide Safe Operating Area, complementary to 2SA940(3CA940). /Absolute maximum ratings(Ta=25)

 ..4. Size:1725K  jsmsemi
 2sc2073.pdf

2SC2073NPN / Descriptions TO-220 NPN Silicon NPN transistor in a TO-220 Plastic Package. / Features PIN1Base , 2SA940 1 PIN 2Collector 2 3 Wide Safe Operating Area, complementary to 2SA940. PIN 3Emitter / Applications

 ..5. Size:421K  cn sptech
 2sc2073.pdf

SPTECH Product SpecificationSPTECH Silicon NPN Power Transistor 2SC2073DESCRIPTIONCollector-Emitter Breakdown Voltage-:V = 150V(Min)(BR)CEOWide Area of Safe OperationComplement to Type 2SA940APPLICATIONSPower amplifier applications.Vertical output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 150 VCBO

 ..6. Size:192K  inchange semiconductor
 2sc2073.pdf

isc Silicon NPN Power Transistor 2SC2073DESCRIPTIONCollector-Emitter Breakdown Voltage-:V = 150V(Min)(BR)CEOWide Area of Safe OperationComplement to Type 2SA940Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applications.Vertical output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARA

 0.1. Size:154K  toshiba
 2sc2073a.pdf

 0.2. Size:632K  semtech
 st2sc2073u.pdf

ST 2SC2073U NPN Silicon Epitaxial Planar Transistor General purpose amplifier and high voltage application Absolute Maximum Ratings (Ta = 25) Parameter Symbol Value Unit Collector Base Voltage VCBO 160 V Collector Emitter Voltage VCEO 160 V Emitter Base Voltage VEBO 7 V Collector Current IC 1 APeak Collector Current (Single pulse, tp = 300 s) ICP 2 A0.5 Ptot W To

 0.3. Size:221K  foshan
 2sc2073a 3da2073a.pdf

2SC2073A(3DA2073A) NPN /SILICON NPN TRANSISTOR : Purpose: Power amplifier applications, vertical output applications. :, 2SA940A(3CA940A) Features: Wide Safe Operating Area, complementary to 2SA940A(3CA940A). /Absolute maximum ratings(Ta=25)

 0.4. Size:1293K  cn sps
 2sc2073t1tl.pdf

2SC2073T1TLSilicon NPN Power TransistorDESCRIPTIONCollector-Emitter Breakdown Voltage-:V = 150V(Min)(BR)CEOWide Area of Safe OperationComplement to Type 2SA940APPLICATIONSPower amplifier applications.Vertical output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 150 VCBOV Collector-Emitter Voltage 150