2SC2105 Todos los transistores

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2SC2105 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SC2105

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 15 W

Tensión colector-base (Vcb): 35 V

Tensión emisor-base (Veb): 3 V

Corriente del colector DC máxima (Ic): 1.4 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 1200 MHz

Capacitancia de salida (Cc): 15 pF

Ganancia de corriente contínua (hfe): 100

Empaquetado / Estuche: TO128

Búsqueda de reemplazo de transistor bipolar 2SC2105

 

2SC2105 Datasheet (PDF)

5.1. 2sc2120-y.pdf Size:255K _update

2SC2105
2SC2105

MCC TM Micro Commercial Components 2SC2120-O 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2SC2120-Y Phone: (818) 701-4933 Fax: (818) 701-4939 Features Complementary Pair With 2SA950 Epoxy meets UL 94 V-0 flammability rating NPN Silicon Moisure Sensitivity Level 1 Lead Free Finish/RoHS Compliant ("P" Suffix designates Transistors RoHS Compliant

5.2. 2sc2120-o.pdf Size:255K _update

2SC2105
2SC2105

MCC TM Micro Commercial Components 2SC2120-O 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2SC2120-Y Phone: (818) 701-4933 Fax: (818) 701-4939 Features Complementary Pair With 2SA950 Epoxy meets UL 94 V-0 flammability rating NPN Silicon Moisure Sensitivity Level 1 Lead Free Finish/RoHS Compliant ("P" Suffix designates Transistors RoHS Compliant

5.3. 2sc2120.pdf Size:197K _toshiba

2SC2105
2SC2105

2SC2120 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2120 Audio Power Amplifier Applications Unit: mm High hFE: h = 100~320 FE (1) 1 watts amplifier applications. Complementary to 2SA950 Maximum Ratings (Ta = = 25C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 35 V Collector-emitter voltage VCEO 30 V Emitter-base voltage VEBO

5.4. 2sc2178.pdf Size:181K _toshiba

2SC2105
2SC2105

5.5. 2sc2173.pdf Size:176K _toshiba

2SC2105
2SC2105

5.6. 2sc2118.pdf Size:72K _toshiba

2SC2105
2SC2105

5.7. 2sc2161.pdf Size:73K _sanyo

2SC2105

5.8. 2sc4185 2sc2148 ne73430 ne73435.pdf Size:39K _nec

2SC2105
2SC2105

NPN SILICON GENERAL NE734 PURPOSE TRANSISTOR SERIES FEATURES LOW NOISE FIGURE: < 3 dB at 500 MHz HIGH GAIN: 15 dB at 500 MHz HIGH GAIN BANDWIDTH PRODUCT: 2 GHz (3 GHz for the NE73435) SMALL COLLECTOR CAPACITANCE: 1 pF HIGH RELIABILITY METALLIZATION 35 (MICRO-X) 30 (SOT 323 STYLE) DESCRIPTION The NE734 series of NPN silicon general purpose UHF tran- NE73433 is in the plastic M

5.9. 2sc2351 2sc2149 2sc4092 ne02133 ne02135 ne02139.pdf Size:171K _nec

2SC2105
2SC2105

NEC's NPN SILICON HIGH NE021 FREQUENCY TRANSISTOR SERIES FEATURES HIGH INSERTION GAIN: 18.5 dB at 500 MHz LOW NOISE FIGURE: 1.5 dB at 500 MHz HIGH POWER GAIN: 12 dB at 2 GHz LARGE DYNAMIC RANGE: 19 dBm at 1 dB, 2 GHz Gain Compression DESCRIPTION 00 (CHIP) 07/07B NEC's NE021 series of NPN silicon transistors provides eco- nomical solutions to wide ranges of amplifier and oscillat

5.10. 2sc2148 2sc2149.pdf Size:52K _nec

2SC2105
2SC2105

DATA SHEET SILICON TRANSISTORS 2SC2148, 2SC2149 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SC2148, 2SC2149 are economical microwave transistors PACKAGE DIMENSIONS (Unit : mm) encapsulated into new hermetic stripline packages, "micro X". These are designed for small signal amplifier, low noise amplifier, 1 and oscillator applications in the L to C b

5.11. 2sc2188 e.pdf Size:42K _panasonic

2SC2105
2SC2105

Transistor 2SC2188 Silicon NPN epitaxial planer type For intermediate frequency amplification of TV image Unit: mm 6.9 0.1 2.5 0.1 1.5 1.5 R0.9 1.0 Features R0.9 High transition frequency fT. Satisfactory linearity of forward current transfer ratio hFE. M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 0.85 0.55

5.12. 2sc2188.pdf Size:38K _panasonic

2SC2105
2SC2105

Transistor 2SC2188 Silicon NPN epitaxial planer type For intermediate frequency amplification of TV image Unit: mm 6.9 0.1 2.5 0.1 1.5 1.5 R0.9 1.0 Features R0.9 High transition frequency fT. Satisfactory linearity of forward current transfer ratio hFE. M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 0.85 0.55

5.13. 2sc2131.pdf Size:143K _mitsubishi

2SC2105
2SC2105

5.14. 2sc2166.pdf Size:130K _mitsubishi

2SC2105
2SC2105

5.15. 2sc2133.pdf Size:150K _mitsubishi

2SC2105
2SC2105

5.16. 2sc2134.pdf Size:150K _mitsubishi

2SC2105
2SC2105

5.17. 2sc2120.pdf Size:129K _secos

2SC2105
2SC2105

2SC2120 0.8 A , 35 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURES High DC Current Gain G H Complementary to 2SA950 1Emitter 1 1 1 2Collector 2 2 2 3 3 3 J 3Base CLASSIFICATION OF hFE A D Millimeter REF. Product-Rank 2SC2120-O 2SC2120-Y Min. Max.

5.18. 2sc2149.pdf Size:37K _advanced-semi

2SC2105

2SC2149 NPN SILICON RF TRANSISTOR DESCRIPTION: The ASI 2SC2149 is Designed for PACKAGE STYLE .085 4LPILL Oscillator and Amplifier Applications up to 2.0 GHz. FEATURES INCLUDE: • High insertion gain. • High power gain. • Low Noise figure MAXIMUM RATINGS IC 70 mA VCBO 25 V VCEO 12 V VEBO 3.0 V PDISS 3.3 W @ TA = 25 °C TJ -65 °C to +200 °C TSTG -65 °C to +2

5.19. 2sc2166.pdf Size:26K _jmnic

2SC2105
2SC2105

Product Specification Silicon NPN Power Transistor 2SC2166 DESCRIPTION ·High Power Gain- : Gpe? 13.8dB @f= 27MHz, PO= 6W; VCC= 12V ·High Reliability APPLICATIONS ·Designed for 3 to 4 watts output power amplifiers in HF band mobile radio applications. ABSOLUTE MAXIMUM RATINGS (Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 45 V VCER Collector-Emitter Vol

5.20. 2sc2167.pdf Size:56K _inchange_semiconductor

2SC2105
2SC2105

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2167 DESCRIPTION ·With TO-220 package ·High collector-emitter breakdown voltage : VCEO=150V(min) APPLICATIONS ·Power amplifier applications ·TV vertical deflection applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings (Ta=2

5.21. 2sc2168.pdf Size:260K _inchange_semiconductor

2SC2105
2SC2105

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2168 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min) ·DC Current Gain- : hFE= 60(Min)@ (VCE= 10V, IC= 0.7A) APPLICATIONS ·Designed for TV vertical output ,audio output driver and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE U

5.22. 2sc2151.pdf Size:129K _inchange_semiconductor

2SC2105
2SC2105

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2151 DESCRIPTION ·With TO-3 package ·High voltage ,high speed APPLICATIONS ·Converters ·Inverters ·Switching regulators ·Motor controls PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta=?) SYMBOL PARA

5.23. 2sc2123.pdf Size:127K _inchange_semiconductor

2SC2105
2SC2105

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2123 DESCRIPTION ·With TO-3 package ·Short switching times. ·High dielectric strength. APPLICATIONS ·For use in TV horizontal deflection stage PINNING(see fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta=?) SYMBOL PAR

5.24. 2sc2189.pdf Size:195K _inchange_semiconductor

2SC2105
2SC2105

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2189 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V (Min) ·Wide Area of Safe Operation APPLICATIONS ·Designed for high speed switching and power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 150 V VCEO C

5.25. 2sc2140.pdf Size:230K _inchange_semiconductor

2SC2105
2SC2105

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2140 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 350V (Min) ·High Switching Speed APPLICATIONS ·Switching regulator and high voltage switching applications. ·High speed DC-DC converter applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER MAX UNIT VCBO Col

5.26. 2sc2137.pdf Size:199K _inchange_semiconductor

2SC2105
2SC2105

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2137 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V (Min) ·High Switching Speed APPLICATIONS ·Switching regulator and high voltage switching applications. ·High speed DC-DC converter applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER MAX UNIT VCBO Col

5.27. 2sc2139.pdf Size:199K _inchange_semiconductor

2SC2105
2SC2105

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2139 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V (Min) ·High Switching Speed APPLICATIONS ·Switching regulator and high voltage switching applications. ·High speed DC-DC converter applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER MAX UNIT VCBO Col

5.28. 2sc2122.pdf Size:127K _inchange_semiconductor

2SC2105
2SC2105

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2122 DESCRIPTION ·With TO-3 package ·Short switching times. ·High dielectric strength. APPLICATIONS ·For use in TV horizontal deflection stage PINNING(see fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta=?) SYMBOL PAR

Otros transistores... 2SC21 , 2SC210 , 2SC2100 , 2SC2101 , 2SC2102 , 2SC2103 , 2SC2103A , 2SC2104 , BC109C , 2SC2106 , 2SC2107 , 2SC2107G3 , 2SC2107G4 , 2SC2107G5 , 2SC2107G6 , 2SC2108 , 2SC2109 .

 


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