2SC212 Todos los transistores

 0.1. Size:197K  toshiba
 2sc2120.pdf

2SC2120 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2120 Audio Power Amplifier Applications Unit mm High hFE h = 100 320 FE (1) 1 watts amplifier applications. Complementary to 2SA950 Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 35 V Collector-emitter voltage VCEO 30 V Emitter-base vo

 0.2. Size:255K  mcc
 2sc2120-y.pdf

MCC TM Micro Commercial Components 2SC2120-O 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2SC2120-Y Phone (818) 701-4933 Fax (818) 701-4939 Features Complementary Pair With 2SA950 Epoxy meets UL 94 V-0 flammability rating NPN Silicon Moisure Sensitivity Level 1 Lead Free Finish/RoHS Compliant ("P" Suffix designates Transistors RoHS Compliant

 0.3. Size:255K  mcc
 2sc2120-o.pdf

MCC TM Micro Commercial Components 2SC2120-O 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2SC2120-Y Phone (818) 701-4933 Fax (818) 701-4939 Features Complementary Pair With 2SA950 Epoxy meets UL 94 V-0 flammability rating NPN Silicon Moisure Sensitivity Level 1 Lead Free Finish/RoHS Compliant ("P" Suffix designates Transistors RoHS Compliant

 0.4. Size:129K  secos
 2sc2120.pdf

2SC2120 0.8 A , 35 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES High DC Current Gain G H Complementary to 2SA950 1Emitter 1 1 1 2Collector 2 2 2 3 3 3 J 3Base CLASSIFICATION OF hFE A D Millimeter REF. Product-Rank 2SC2120-O 2SC2120-Y Min. Max

 0.5. Size:549K  jiangsu
 2sc2120.pdf

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SC2120 TRANSISTOR (NPN) TO 92 FEATURES 1. EMITTER High DC Current Gain Complementary to 2SA950 2. COLLECTOR 3. BASE Equivalent Circuit C2120=Device code C2120 Solid dot=Green molding compound device, XXX if none,the normal device XXX=Code 1 ORDERING INFORMATION Pa

 0.6. Size:176K  inchange semiconductor
 2sc2122.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2122 DESCRIPTION With TO-3 Package Low collector saturation voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Designed for color TV horizontal deflection driver ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 800 V CBO

 0.7. Size:208K  inchange semiconductor
 2sc2123.pdf

isc Silicon NPN Power Transistor 2SC2123 DESCRIPTION High Collector-Base Breakdown Voltage- V = 1000V (Min) (BR)CBO High Current Capability High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for TV horizontal output and high power switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMB

 0.8. Size:190K  inchange semiconductor
 2sc2120.pdf

isc Silicon NPN Transistor 2SC2120 DESCRIPTION High hFE(1)=100-320 1 Watts Amplifier Applications Complement to Type 2SA950 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Audio power amplifier Applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 35 V CBO V Collector-Emitter