2SC212
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SC212
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.65
W
Tensión colector-base (Vcb): 80
V
Tensión emisor-base (Veb): 5
V
Corriente del colector DC máxima (Ic): 0.5
A
Temperatura operativa máxima (Tj): 175
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 75
MHz
Capacitancia de salida (Cc): 30
pF
Ganancia de corriente contínua (hfe): 50
Paquete / Cubierta:
TO5
Búsqueda de reemplazo de transistor bipolar 2SC212
2SC212
Datasheet (PDF)
0.1. Size:197K toshiba
2sc2120.pdf
2SC2120 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2120 Audio Power Amplifier Applications Unit: mm High hFE: h = 100~320 FE (1) 1 watts amplifier applications. Complementary to 2SA950 Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 35 VCollector-emitter voltage VCEO 30 VEmitter-base vo
0.2. Size:255K mcc
2sc2120-y.pdf
MCCTM Micro Commercial Components2SC2120-O20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 913112SC2120-YPhone: (818) 701-4933Fax: (818) 701-4939Features Complementary Pair With 2SA950 Epoxy meets UL 94 V-0 flammability ratingNPN Silicon Moisure Sensitivity Level 1 Lead Free Finish/RoHS Compliant ("P" Suffix designates TransistorsRoHS Compliant
0.3. Size:255K mcc
2sc2120-o.pdf
MCCTM Micro Commercial Components2SC2120-O20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 913112SC2120-YPhone: (818) 701-4933Fax: (818) 701-4939Features Complementary Pair With 2SA950 Epoxy meets UL 94 V-0 flammability ratingNPN Silicon Moisure Sensitivity Level 1 Lead Free Finish/RoHS Compliant ("P" Suffix designates TransistorsRoHS Compliant
0.4. Size:129K secos
2sc2120.pdf
2SC2120 0.8 A , 35 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES High DC Current Gain G H Complementary to 2SA950 1Emitter 1112Collector 222333J 3Base CLASSIFICATION OF hFE A DMillimeter REF. Product-Rank 2SC2120-O 2SC2120-Y Min. Max
0.5. Size:549K jiangsu
2sc2120.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors2SC2120 TRANSISTOR (NPN)TO 92 FEATURES 1. EMITTER High DC Current Gain Complementary to 2SA950 2. COLLECTOR3. BASE Equivalent Circuit C2120=Device code C2120 Solid dot=Green molding compound device, XXX if none,the normal deviceXXX=Code 1ORDERING INFORMATION Pa
0.6. Size:176K inchange semiconductor
2sc2122.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC2122DESCRIPTIONWith TO-3 PackageLow collector saturation voltageMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for color TV horizontal deflection driverABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 800 VCBO
0.7. Size:208K inchange semiconductor
2sc2123.pdf
isc Silicon NPN Power Transistor 2SC2123DESCRIPTIONHigh Collector-Base Breakdown Voltage-: V = 1000V (Min)(BR)CBOHigh Current CapabilityHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for TV horizontal output and high power switchingapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMB
0.8. Size:190K inchange semiconductor
2sc2120.pdf
isc Silicon NPN Transistor 2SC2120DESCRIPTIONHigh hFE(1)=100-3201 Watts Amplifier ApplicationsComplement to Type 2SA950Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAudio power amplifier ApplicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 35 VCBOV Collector-Emitter
Otros transistores... 2N3200
, 2N3201
, 2N3202
, 2N3203
, 2N3204
, 2N3205
, 2N3206
, 2N3207
, B772
, 2N3209
, 2N3209AQF
, 2N3209CSM
, 2N3209DCSM
, 2N3209L
, 2N321
, 2N3210
, 2N3211
.