2SC214 Todos los transistores

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 2sc2351 2sc2149 2sc4092 ne02133 ne02135 ne02139.pdf

NEC's NPN SILICON HIGH NE021 FREQUENCY TRANSISTOR SERIES FEATURES HIGH INSERTION GAIN 18.5 dB at 500 MHz LOW NOISE FIGURE 1.5 dB at 500 MHz HIGH POWER GAIN 12 dB at 2 GHz LARGE DYNAMIC RANGE 19 dBm at 1 dB, 2 GHz Gain Compression DESCRIPTION 00 (CHIP) 07/07B NEC's NE021 series of NPN silicon transistors provides eco- nomical solutions to wide ranges of amplifier a

 0.2. Size:52K  nec
 2sc2148 2sc2149.pdf

DATA SHEET SILICON TRANSISTORS 2SC2148, 2SC2149 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SC2148, 2SC2149 are economical microwave transistors PACKAGE DIMENSIONS (Unit mm) encapsulated into new hermetic stripline packages, "micro X". These are designed for small signal amplifier, low noise amplifier, 1 and oscillator applications in the L to

 0.3. Size:39K  nec
 2sc4185 2sc2148 ne73430 ne73435.pdf

NPN SILICON GENERAL NE734 PURPOSE TRANSISTOR SERIES FEATURES LOW NOISE FIGURE

 0.4. Size:37K  advanced-semi
 2sc2149.pdf

2SC2149 NPN SILICON RF TRANSISTOR DESCRIPTION The ASI 2SC2149 is Designed for PACKAGE STYLE .085 4LPILL Oscillator and Amplifier Applications up to 2.0 GHz. FEATURES INCLUDE High insertion gain. High power gain. Low Noise figure MAXIMUM RATINGS IC 70 mA VCBO 25 V VCEO 12 V VEBO 3.0 V PDISS 3.3 W @ TA = 25 C TJ -65 C to +200 C TSTG -65 C to +2

 0.5. Size:209K  inchange semiconductor
 2sc2140.pdf

isc Silicon NPN Power Transistor 2SC2140 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 350V (Min) (BR)CEO High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulator and high voltage switching applications. High speed DC-DC converter applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a