2SC2162
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SC2162
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 12
W
Tensión colector-base (Vcb): 38
V
Tensión colector-emisor (Vce): 18
V
Tensión emisor-base (Veb): 3
V
Corriente del colector DC máxima (Ic): 2
A
Temperatura operativa máxima (Tj): 175
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 1000
MHz
Capacitancia de salida (Cc): 10
pF
Ganancia de corriente contínua (hfe): 50
Paquete / Cubierta:
TO128
Búsqueda de reemplazo de transistor bipolar 2SC2162
2SC2162
Datasheet (PDF)
8.2. Size:26K jmnic
2sc2166.pdf 
Product Specification Silicon NPN Power Transistor 2SC2166 DESCRIPTION High Power Gain- : Gpe 13.8dB @f= 27MHz, PO= 6W; VCC= 12V High Reliability APPLICATIONS Designed for 3 to 4 watts output power amplifiers in HF band mobile radio applications. ABSOLUTE MAXIMUM RATINGS (Ta=25) SYMBOL PARAMETER VALUE UNITVCBO Collector-Base Voltage 45 V VCER Collector-Emit
8.3. Size:230K inchange semiconductor
2sc2167.pdf
isc Silicon NPN Power Transistor 2SC2167DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 150V(Min)(BR)CEODC Current Gain-: h = 60(Min)@ (V = 10V, I = 0.7A)FE CE CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for TV vertical output ,audio output driver andgeneral purpose applications.ABSOLUTE MAXIMUM RA
8.4. Size:185K inchange semiconductor
2sc2166.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC2166DESCRIPTIONHigh Power Gain-: G 13.8dB @f= 27MHz, P = 6W; V = 12Vpe O CCHigh ReliabilityMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for 3 to 4 watts output power amplifiers in HF bandmobile radio applications.ABSOLUTE MAXIMUM RATINGS (T =25
8.5. Size:231K inchange semiconductor
2sc2168.pdf
isc Silicon NPN Power Transistor 2SC2168DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 200V(Min)(BR)CEODC Current Gain-: h = 60(Min)@ (V = 10V, I = 0.7A)FE CE CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for TV vertical output ,audio output driver andgeneral purpose applications.ABSOLUTE MAXIMUM RA
Otros transistores... 2SA1801
, 2SA1802
, 2SA1802A
, 2SA1803
, 2SA1803O
, 2SA1803R
, 2SA1804
, 2SA1804O
, TIP35C
, 2SA1805
, 2SA1805O
, 2SA1805R
, 2SA1806
, 2SA181
, 2SA1810
, 2SA1810B
, 2SA1810C
.
