2SC2177. Equivalente. Reemplazo. Todos los transistores. Hoja de especificaciones. Principales características

2SC2177 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SC2177

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 45 W

Tensión colector-base (Vcb): 50 V

Tensión colector-emisor (Vce): 25 V

Tensión emisor-base (Veb): 4 V

Corriente del colector DC máxima (Ic): 5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 200 MHz

Capacitancia de salida (Cc): 80 pF

Ganancia de corriente contínua (hFE): 10

Encapsulados: TO128

Búsqueda de reemplazo de 2SC2177

- Selecciónⓘ de transistores por parámetros

2SC2177 datasheet

8.1. Size:181K toshiba
2sc2178.pdf pdf_icon

8.2. Size:176K toshiba
2sc2173.pdf pdf_icon

9.1. Size:98K 1
2sc2100.pdf pdf_icon

Downloaded

9.2. Size:65K 1
2sc2181.pdf pdf_icon

9.3. Size:197K toshiba
2sc2120.pdf pdf_icon

2SC2120 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2120 Audio Power Amplifier Applications Unit mm High hFE h = 100 320 FE (1) 1 watts amplifier applications. Complementary to 2SA950 Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 35 V Collector-emitter voltage VCEO 30 V Emitter-base vo

9.4. Size:72K toshiba
2sc2118.pdf pdf_icon

9.5. Size:73K sanyo
2sc2161.pdf pdf_icon

9.6. Size:171K nec
2sc2351 2sc2149 2sc4092 ne02133 ne02135 ne02139.pdf pdf_icon

NEC's NPN SILICON HIGH NE021 FREQUENCY TRANSISTOR SERIES FEATURES HIGH INSERTION GAIN 18.5 dB at 500 MHz LOW NOISE FIGURE 1.5 dB at 500 MHz HIGH POWER GAIN 12 dB at 2 GHz LARGE DYNAMIC RANGE 19 dBm at 1 dB, 2 GHz Gain Compression DESCRIPTION 00 (CHIP) 07/07B NEC's NE021 series of NPN silicon transistors provides eco- nomical solutions to wide ranges of amplifier a

9.7. Size:52K nec
2sc2148 2sc2149.pdf pdf_icon

DATA SHEET SILICON TRANSISTORS 2SC2148, 2SC2149 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SC2148, 2SC2149 are economical microwave transistors PACKAGE DIMENSIONS (Unit mm) encapsulated into new hermetic stripline packages, "micro X". These are designed for small signal amplifier, low noise amplifier, 1 and oscillator applications in the L to

9.8. Size:39K nec
2sc4185 2sc2148 ne73430 ne73435.pdf pdf_icon

NPN SILICON GENERAL NE734 PURPOSE TRANSISTOR SERIES FEATURES LOW NOISE FIGURE

9.9. Size:255K mcc
2sc2120-y.pdf pdf_icon

MCC TM Micro Commercial Components 2SC2120-O 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2SC2120-Y Phone (818) 701-4933 Fax (818) 701-4939 Features Complementary Pair With 2SA950 Epoxy meets UL 94 V-0 flammability rating NPN Silicon Moisure Sensitivity Level 1 Lead Free Finish/RoHS Compliant ("P" Suffix designates Transistors RoHS Compliant

9.10. Size:255K mcc
2sc2120-o.pdf pdf_icon

9.11. Size:38K panasonic
2sc2188.pdf pdf_icon

Transistor 2SC2188 Silicon NPN epitaxial planer type For intermediate frequency amplification of TV image Unit mm 6.9 0.1 2.5 0.1 1.5 1.5 R0.9 1.0 Features R0.9 High transition frequency fT. Satisfactory linearity of forward current transfer ratio hFE. M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 0.85

9.12. Size:42K panasonic
2sc2188 e.pdf pdf_icon

9.13. Size:129K secos
2sc2120.pdf pdf_icon

2SC2120 0.8 A , 35 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES High DC Current Gain G H Complementary to 2SA950 1Emitter 1 1 1 2Collector 2 2 2 3 3 3 J 3Base CLASSIFICATION OF hFE A D Millimeter REF. Product-Rank 2SC2120-O 2SC2120-Y Min. Max

9.14. Size:37K advanced-semi
2sc2149.pdf pdf_icon

2SC2149 NPN SILICON RF TRANSISTOR DESCRIPTION The ASI 2SC2149 is Designed for PACKAGE STYLE .085 4LPILL Oscillator and Amplifier Applications up to 2.0 GHz. FEATURES INCLUDE High insertion gain. High power gain. Low Noise figure MAXIMUM RATINGS IC 70 mA VCBO 25 V VCEO 12 V VEBO 3.0 V PDISS 3.3 W @ TA = 25 C TJ -65 C to +200 C TSTG -65 C to +2

9.15. Size:549K jiangsu
2sc2120.pdf pdf_icon

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SC2120 TRANSISTOR (NPN) TO 92 FEATURES 1. EMITTER High DC Current Gain Complementary to 2SA950 2. COLLECTOR 3. BASE Equivalent Circuit C2120=Device code C2120 Solid dot=Green molding compound device, XXX if none,the normal device XXX=Code 1 ORDERING INFORMATION Pa

9.16. Size:26K jmnic
2sc2166.pdf pdf_icon

Product Specification Silicon NPN Power Transistor 2SC2166 DESCRIPTION High Power Gain- Gpe 13.8dB @f= 27MHz, PO= 6W; VCC= 12V High Reliability APPLICATIONS Designed for 3 to 4 watts output power amplifiers in HF band mobile radio applications. ABSOLUTE MAXIMUM RATINGS (Ta=25 ) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 45 V VCER Collector-Emit

9.17. Size:186K inchange semiconductor
2sc2189.pdf pdf_icon

isc Silicon NPN Power Transistor 2SC2189 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 100V (Min) (BR)CEO Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high speed switching and power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER MAX UNIT V Col

9.18. Size:230K inchange semiconductor
2sc2167.pdf pdf_icon

isc Silicon NPN Power Transistor 2SC2167 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 150V(Min) (BR)CEO DC Current Gain- h = 60(Min)@ (V = 10V, I = 0.7A) FE CE C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for TV vertical output ,audio output driver and general purpose applications. ABSOLUTE MAXIMUM RA

9.19. Size:177K inchange semiconductor
2sc2151.pdf pdf_icon

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2151 DESCRIPTION With TO-3 Package Low collector saturation voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Designed for color TV horizontal deflection driver ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 600 V CBO

9.20. Size:176K inchange semiconductor
2sc2122.pdf pdf_icon

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2122 DESCRIPTION With TO-3 Package Low collector saturation voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Designed for color TV horizontal deflection driver ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 800 V CBO

9.21. Size:185K inchange semiconductor
2sc2166.pdf pdf_icon

9.22. Size:208K inchange semiconductor
2sc2123.pdf pdf_icon

isc Silicon NPN Power Transistor 2SC2123 DESCRIPTION High Collector-Base Breakdown Voltage- V = 1000V (Min) (BR)CBO High Current Capability High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for TV horizontal output and high power switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMB

9.23. Size:190K inchange semiconductor
2sc2120.pdf pdf_icon

isc Silicon NPN Transistor 2SC2120 DESCRIPTION High hFE(1)=100-320 1 Watts Amplifier Applications Complement to Type 2SA950 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Audio power amplifier Applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 35 V CBO V Collector-Emitter

9.24. Size:204K inchange semiconductor
2sc2137.pdf pdf_icon

isc Silicon NPN Power Transistor 2SC2137 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 400V (Min) (BR)CEO High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulator and high voltage switching applications. High speed DC-DC converter applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a

9.25. Size:209K inchange semiconductor
2sc2140.pdf pdf_icon

isc Silicon NPN Power Transistor 2SC2140 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 350V (Min) (BR)CEO High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulator and high voltage switching applications. High speed DC-DC converter applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a

9.26. Size:204K inchange semiconductor
2sc2139.pdf pdf_icon

isc Silicon NPN Power Transistor 2SC2139 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 400V (Min) (BR)CEO High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulator and high voltage switching applications. High speed DC-DC converter applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a

9.27. Size:231K inchange semiconductor
2sc2168.pdf pdf_icon

isc Silicon NPN Power Transistor 2SC2168 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 200V(Min) (BR)CEO DC Current Gain- h = 60(Min)@ (V = 10V, I = 0.7A) FE CE C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for TV vertical output ,audio output driver and general purpose applications. ABSOLUTE MAXIMUM RA

Otros transistores... 2SC2168 , 2SC2169 , 2SC217 , 2SC2172 , 2SC2173 , 2SC2174 , 2SC2175 , 2SC2176 , 2SC1815 , 2SC2178 , 2SC2179 , 2SC218 , 2SC2180 , 2SC2181 , 2SC2182 , 2SC2183 , 2SC2184 .