2SC2205
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SC2205
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.4
W
Tensión colector-base (Vcb): 45
V
Tensión colector-emisor (Vce): 25
V
Tensión emisor-base (Veb): 5
V
Corriente del colector DC máxima (Ic): 0.03
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 2200(typ)
MHz
Ganancia de corriente contínua (hfe): 50
Paquete / Cubierta: TO-71-6
Búsqueda de reemplazo de transistor bipolar 2SC2205
2SC2205
Datasheet (PDF)
8.2. Size:91K panasonic
2sc2209.pdf
Power Transistors2SC2209Silicon NPN epitaxial planar typeFor low-frequency power amplificationUnit: mm7.5+0.50.1 2.90.2Complementary to 2SA0963120 Features Large collector power dissipation PC Output of 5 W can be obtained by a complementary pair with2SA0963 Absolute Maximum Ratings Ta = 25CParameter Symbol Rating Unit0.750.1Collector-base
8.3. Size:105K panasonic
2sc2206.pdf
Transistors2SC2206Silicon NPN epitaxial planar typeFor high-frequency amplification Unit: mmComplementary to 2SA12542.50.16.90.1(1.0)(1.5)(1.5) FeaturesR 0.9 Optimum for RF amplification of FM/AM radiosR 0.7 High transition frequency fT M type package allowing easy automatic and manual insertionas well as stand-alone fixing to the printed circuit
8.4. Size:57K panasonic
2sc2206 e.pdf
Transistor2SC2206Silicon NPN epitaxial planer typeFor high-frequency amplificationUnit: mmComplementary to 2SA12546.9 0.1 2.5 0.11.51.5 R0.9 1.0Features R0.9Optimum for RF amplification of FM/AM radios.High transition frequency fT.M type package allowing easy automatic and manual insertion aswell as stand-alone fixing to the printed circuit board.0.850.55 0.1
8.5. Size:198K inchange semiconductor
2sc2209.pdf
isc Silicon NPN Power Transistor 2SC2209DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 40V(Min)(BR)CEOHigh Collector Power DissipationComplement to Type 2SA963Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplification.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALU
Otros transistores... 2N3200
, 2N3201
, 2N3202
, 2N3203
, 2N3204
, 2N3205
, 2N3206
, 2N3207
, B772
, 2N3209
, 2N3209AQF
, 2N3209CSM
, 2N3209DCSM
, 2N3209L
, 2N321
, 2N3210
, 2N3211
.