2SC2206 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SC2206
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.4 W
Tensión colector-base (Vcb): 30 V
Tensión colector-emisor (Vce): 20 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 0.03 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 150 MHz
Ganancia de corriente contínua (hfe): 70
Paquete / Cubierta: SC71
Búsqueda de reemplazo de transistor bipolar 2SC2206
2SC2206 Datasheet (PDF)
2sc2206.pdf
Transistors2SC2206Silicon NPN epitaxial planar typeFor high-frequency amplification Unit: mmComplementary to 2SA12542.50.16.90.1(1.0)(1.5)(1.5) FeaturesR 0.9 Optimum for RF amplification of FM/AM radiosR 0.7 High transition frequency fT M type package allowing easy automatic and manual insertionas well as stand-alone fixing to the printed circuit
2sc2206 e.pdf
Transistor2SC2206Silicon NPN epitaxial planer typeFor high-frequency amplificationUnit: mmComplementary to 2SA12546.9 0.1 2.5 0.11.51.5 R0.9 1.0Features R0.9Optimum for RF amplification of FM/AM radios.High transition frequency fT.M type package allowing easy automatic and manual insertion aswell as stand-alone fixing to the printed circuit board.0.850.55 0.1
2sc2209.pdf
Power Transistors2SC2209Silicon NPN epitaxial planar typeFor low-frequency power amplificationUnit: mm7.5+0.50.1 2.90.2Complementary to 2SA0963120 Features Large collector power dissipation PC Output of 5 W can be obtained by a complementary pair with2SA0963 Absolute Maximum Ratings Ta = 25CParameter Symbol Rating Unit0.750.1Collector-base
2sc2209.pdf
isc Silicon NPN Power Transistor 2SC2209DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 40V(Min)(BR)CEOHigh Collector Power DissipationComplement to Type 2SA963Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplification.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALU
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: 2N1789 | MMBTA63LT1G | CMC4012A | CHTA42XGP | CHV1570A | 2SA290 | CK17A
History: 2N1789 | MMBTA63LT1G | CMC4012A | CHTA42XGP | CHV1570A | 2SA290 | CK17A
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050