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2SC2207 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SC2207
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 14 W
   Tensión colector-base (Vcb): 80 V
   Tensión colector-emisor (Vce): 80 V
   Corriente del colector DC máxima (Ic): 8 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 27 MHz
   Ganancia de corriente contínua (hfe): 60
   Paquete / Cubierta: TO220

 Búsqueda de reemplazo de transistor bipolar 2SC2207

 

2SC2207 Datasheet (PDF)

 8.1. Size:89K  1
2sc2204 2sc2220.pdf

2SC2207

 8.2. Size:91K  panasonic
2sc2209.pdf

2SC2207
2SC2207

Power Transistors2SC2209Silicon NPN epitaxial planar typeFor low-frequency power amplificationUnit: mm7.5+0.50.1 2.90.2Complementary to 2SA0963120 Features Large collector power dissipation PC Output of 5 W can be obtained by a complementary pair with2SA0963 Absolute Maximum Ratings Ta = 25CParameter Symbol Rating Unit0.750.1Collector-base

 8.3. Size:105K  panasonic
2sc2206.pdf

2SC2207
2SC2207

Transistors2SC2206Silicon NPN epitaxial planar typeFor high-frequency amplification Unit: mmComplementary to 2SA12542.50.16.90.1(1.0)(1.5)(1.5) FeaturesR 0.9 Optimum for RF amplification of FM/AM radiosR 0.7 High transition frequency fT M type package allowing easy automatic and manual insertionas well as stand-alone fixing to the printed circuit

 8.4. Size:57K  panasonic
2sc2206 e.pdf

2SC2207
2SC2207

Transistor2SC2206Silicon NPN epitaxial planer typeFor high-frequency amplificationUnit: mmComplementary to 2SA12546.9 0.1 2.5 0.11.51.5 R0.9 1.0Features R0.9Optimum for RF amplification of FM/AM radios.High transition frequency fT.M type package allowing easy automatic and manual insertion aswell as stand-alone fixing to the printed circuit board.0.850.55 0.1

 8.5. Size:198K  inchange semiconductor
2sc2209.pdf

2SC2207
2SC2207

isc Silicon NPN Power Transistor 2SC2209DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 40V(Min)(BR)CEOHigh Collector Power DissipationComplement to Type 2SA963Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplification.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALU

Otros transistores... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

 

 
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