2SC2219
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SC2219
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.7
W
Tensión colector-base (Vcb): 20
V
Tensión emisor-base (Veb): 1
V
Corriente del colector DC máxima (Ic): 0.08
A
Temperatura operativa máxima (Tj): 200
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 8000
MHz
Capacitancia de salida (Cc): 1
pF
Ganancia de corriente contínua (hfe): 30
Paquete / Cubierta:
SOT89
2SC2219
Datasheet (PDF)
8.1. Size:267K toshiba
2sc2216 2sc2717.pdf
2SC2216,2SC2717 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC2216,2SC2717 TV Final Picture IF Amplifier Applications Unit: mm High gain: Gpe = 33dB (typ.) (f = 45 MHz) Good linearity of h . FEMaximum Ratings (Ta == 25C) ==Characteristics Symbol Rating Unit2SC2216 50Collector-base voltage VCBO V 2SC2717 30 2SC2216 45Collector-emitter VCEO
8.3. Size:251K secos
2sc2216.pdf
2SC2216 0.05 A , 50 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES Amplifier dissipation NPN Silicon G HBaseEmitter CollectorJA DMillimeter REF. Min. Max.BA 4.40 4.70B 4.30 4.70KC 12.70 -D 3.30 3.81E 0.36 0.56F 0.36 0.51E C F
8.4. Size:234K lge
2sc2216.pdf
2SC2216(NPN)TO-92 Bipolar Transistors 1. BASE TO-92 2. EMITTER 3. COLLECTOR Features Amplifier dissipation NPN Silicon MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 45 V VEBO Emitter-Base Voltage 4 V Dimensions in inches and (millimeters)IC Collector Current -Continuo
8.5. Size:1228K blue-rocket-elect
2sc2216m.pdf
2SC2216M(BR3DG2216M) Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-23 NPN Silicon NPN transistor in a SOT-23 Plastic Package. / Features ,h FEHigh gain, good hFE linearity. / Applications TV final picture IF amplifier applications. / Equival
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