2SC2230G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

2SC2230/2SC2230A TO-92MOD Transistor (NPN)1. EMITTER TO-92MOD12. COLLECTOR 2 3 3. BASE Features5.8006.200 High voltage: VCEO=180V(2SC2230A) 8.400 High DC Current Gain 8.8000.9001.1000.4000.60013.80014.200MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units1.500 TYP2.900Dimensions in inches and (millimeters)VCBO

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

UNISONIC TECHNOLOGIES CO., LTD 2SC2235 NPN SILICON TRANSISTOR AUDIO POWER AMPLIFIER APPLICATIONS DRIVER STAGE AMPLIFIER APPLICATIONS 1TO-92 FEATURES * Complimentary to UTC 2SA965 1TO-92NL ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2SC2235L-x-T92-B 2SC2235G-x-T92-B TO-92 E C B Tape Box 2SC2235L-x-T92-K 2S

AAA

2SC2235TM 0.8A , 120V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92MODFEATURES Complementary to 2SA965 A DBCLASSIFICATION OF hFE Product-Rank 2SC2235TM-O 2SC2235TM-YKE FRange 80-160 120-240CNG HEmitter Collector Base MJLCollector

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate TransistorsTO-92L 2SC2236 TRANSISTOR (NPN)1. EMITTER FEATURE2. COLLECTOR Complementary to 2SA966 and 3 Watts Output Applications. 3. BASE Equivalent Circuit C2236=Device code C2236Solid dot = Green molding compound device, if none, the normal device XXX=Code ORDERING INFOR

JMnic Product Specification Silicon NPN Power Transistors 2SC2238 2SC2238A 2SC2238B DESCRIPTION With TO-220 package Complement to type 2SA968 High breakdown votage APPLICATIONS Power amplifier applications Driver stage amplifier applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterAbsolute maximum ratings(Ta=25)

2SC2235 TO-92L Transistor (NPN)TO-92L1. EMITTER 2. COLLECTER 3. BASE 4.7005.100 2 3 1Features 7.800Complementary to 2SA965 B B8.200MAXIMUM RATINGS (TA=25 unless otherwise noted) 0.6000.800Symbol Parameter Value UnitsB0.350VCBOB Collector-Base Voltage 120 V B0.55013.800VCEOB Collector-Emitter Voltage 120 V B14.200VEBOB Emitter-Base Volt

2SC2236 TO-92L Transistor (NPN)TO-92L1. EMITTER 2. COLLECTOR 3. BASE 4.700 2 3 5.1001Features7.8008.200 Complementary to 2SA966 and 3 Watts output Applications. 0.6000.800MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units0.3500.550VCBO Collector-Base Voltage 30 V 13.80014.200VCEO Collector-Emitter Voltage 30 V VEBO Emitt

2SC2236 TO-92MOD Transistor (NPN)TO-92MOD1. EMITTER 1 22. COLLECTOR 3 3. BASE Features5.8006.200 Complementary to 2SA966 and 3 Watts output Applications. 8.4008.800MAXIMUM RATINGS (TA=25 unless otherwise noted) 0.9001.1000.400Symbol Parameter Value Units0.600VCBO Collector-Base Voltage 30 V13.80014.200VCEO Collector-Emitter Voltage 30 V

2SC2235 TO-92MOD Transistor (NPN)TO-92MOD1 1. EMITTER 22. COLLECTER 3 3. BASE Features Complementary to 2SA965 5.8006.200MAXIMUM RATINGS (TB B=25 unless otherwise noted) A8.4008.800Symbol Parameter Value Units0.9001.100VB B Collector-Base Voltage 120 V CBO0.4000.600VB B Collector-Emitter Voltage 120 V CEOVB B Emitter-Base Voltage 5 V 13

2SC2235 Rev.E Mar.-2016 DATA SHEET / Descriptions TO-92LM NPN Silicon NPN transistor in a TO-92LM Plastic Package. / Features 2SA965 Complementary to 2SA965. / Applications ,Audio frequency amplifier and driver stage amplifier Applications. / Equivale

isc Silicon NPN Power Transistor 2SC2238DESCRIPTIONCollector-Emitter Breakdown Voltage: V =160V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SA968Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsDriver stage amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARA

isc Silicon NPN Power Transistor 2SC2239DESCRIPTIONCollector-Emitter Breakdown Voltage: V =160V(Min)(BR)CEOGood Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsDriver stage amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2233 DESCRIPTION Collector-Emitter Breakdown Voltage- :VCEO= 60V(Min) DC Current Gain- : hFE= 30(Min)@ (VCE= 5V, IC= 1A) High Collector Current High Collector Power Dissipation APPLICATIONS TV Horizontal Deflection Output Application ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL P

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC2238BDESCRIPTIONCollector-Emitter Breakdown Voltage: V =200V(BR)CEOGood Linearity of hFEComplement to Type 2SA968BMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsDriver stage amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =2

isc Silicon NPN Power Transistor 2SC2238 A BDESCRIPTIONWith TO-220 packagingComplement to Type 2SA968 A BMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAC-DC motor controlElectronic ignitionAlternator regulatorABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNIT2SC2238 160V Collector-Base Voltage 2SC