2SC2253 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 2SC2253
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 25 W
   Tensión colector-base (Vcb): 45 V
   Tensión emisor-base (Veb): 3 V
   Corriente del colector DC máxima (Ic): 2 A
   Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   Transición de frecuencia (ft): 900 MHz
   Ganancia de corriente contínua (hfe): 50
   Paquete / Cubierta: TO128

Búsqueda de reemplazo de transistor bipolar 2SC2253

2SC2253 Datasheet (PDF)

8.1. Size:71K panasonic
2sc2258.pdf

Power Transistors2SC2258Silicon NPN triple diffusion planar typeFor high breakdown voltage general amplificationUnit: mm8.0+0.50.13.20.2 3.160.1 Features High collector-emitter voltage (Base open) VCEO High transition frequency fT TO-126B package which requires no insulation plate for installa-tion to the heat sink Absolute Maximum Ratings Ta

8.2. Size:166K jmnic
2sc2258.pdf

JMnic Product Specification Silicon NPN Power Transistors 2SC2258 DESCRIPTION With TO-126 package High transition frequency fT High collector-emitter voltage VCEO APPLICATIONS For high breakdown voltage general amplification For video output amplification PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute maximum

8.3. Size:146K jmnic
2sc2258a.pdf

JMnic Product Specification Silicon NPN Power Transistors 2SC2258A DESCRIPTION With TO-126 package High transition frequency fT High collector-emitter voltage VCEO APPLICATIONS High voltage general amplifier TV video output amplifier PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute maximum ratings(Ta=25) SYMB

8.4. Size:189K inchange semiconductor
2sc2258.pdf

isc Silicon NPN Power Transistor 2SC2258DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 250V(Min)(BR)CEOHigh Current-Gain Bandwidth ProductMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor high breakdown voltage general amplificationFor video output amplificationABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL

8.5. Size:116K inchange semiconductor
2sc2258a.pdf

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2258A DESCRIPTION With TO-126 package High transition frequency fT High collector-emitter voltage VCEO APPLICATIONS High voltage general amplifier TV video output amplifier PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute maximum ratings

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: TN918R | MUN5116DW1T1G

Liste

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