2SC2263
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SC2263
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.25
W
Tensión colector-base (Vcb): 60
V
Tensión colector-emisor (Vce): 55
V
Tensión emisor-base (Veb): 5
V
Corriente del colector DC máxima (Ic): 0.05
A
Temperatura operativa máxima (Tj): 125
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 35
MHz
Capacitancia de salida (Cc): 15
pF
Ganancia de corriente contínua (hfe): 180
Paquete / Cubierta:
TO92
Búsqueda de reemplazo de transistor bipolar 2SC2263
2SC2263
Datasheet (PDF)
8.2. Size:177K inchange semiconductor
2sc2266.pdf 
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC2266DESCRIPTIONWith TO-3 PackageLow collector saturation voltageMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for color TV horizontal deflection driverABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 500 VCBO
8.3. Size:188K inchange semiconductor
2sc2260.pdf
isc Silicon NPN Power Transistor 2SC2260DESCRIPTIONHigh Power Dissipation-: P = 80W(Max.)@T =25C CCollector-Emitter Breakdown Voltage-: V = 100V(Min.)(BR)CEOComplement to Type 2SA980Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSY
8.4. Size:188K inchange semiconductor
2sc2262.pdf
isc Silicon NPN Power Transistor 2SC2262DESCRIPTIONHigh Power Dissipation-: P = 80W(Max.)@T =25C CCollector-Emitter Breakdown Voltage-: V = 140V(Min.)(BR)CEOComplement to Type 2SA982Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSY
8.5. Size:189K inchange semiconductor
2sc2261.pdf
isc Silicon NPN Power Transistor 2SC2261DESCRIPTIONHigh Power Dissipation-: P = 80W(Max.)@T =25C CCollector-Emitter Breakdown Voltage-: V = 120V(Min.)(BR)CEOComplement to Type 2SA981Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSY
Otros transistores... 2N3200
, 2N3201
, 2N3202
, 2N3203
, 2N3204
, 2N3205
, 2N3206
, 2N3207
, B772
, 2N3209
, 2N3209AQF
, 2N3209CSM
, 2N3209DCSM
, 2N3209L
, 2N321
, 2N3210
, 2N3211
.
