2SC227 Todos los transistores

 

2SC227 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SC227
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.65 W
   Tensión colector-base (Vcb): 25 V
   Tensión colector-emisor (Vce): 20 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 0.7 A
   Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 100 MHz
   Ganancia de corriente contínua (hfe): 50
   Paquete / Cubierta: TO5

 Búsqueda de reemplazo de transistor bipolar 2SC227

 

2SC227 Datasheet (PDF)

 0.1. Size:94K  toshiba
2sc2270.pdf

2SC227
2SC227

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

 0.2. Size:38K  hitachi
2sc2278.pdf

2SC227

 0.3. Size:88K  no
2sc2275.pdf

2SC227

 0.4. Size:32K  no
2sc2277.pdf

2SC227

 0.5. Size:78K  secos
2sc2274.pdf

2SC227

2SC2274 0.5 A , 60 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES TO-92 High Breakdown Voltage G H High Current Low Saturation Voltage EmitterJCollectorBase A DBCLASSIFICATION OF hFE(1) Millimeter REF.Min. Max.KProduct-Rank 2SC2274-D

 0.6. Size:156K  jmnic
2sc2275.pdf

2SC227
2SC227

JMnic Product Specification Silicon NPN Power Transistors 2SC2275 2SC2275A DESCRIPTION With TO-220 package Complement to type 2SA985/985A High breakdown voltage APPLICATIONS For low frequency and high frequency power amplifer applicatons PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterAbsolute maximum ratings(Ta=25) SYM

 0.7. Size:175K  foshan
2sc2275-a 3da2275-a.pdf

2SC227
2SC227

2SC2275(3DA2275) 2SC2275A(3DA2275A) NPN /SILICON NPN TRANSISTOR : Purpose: Power amplifier applications. :, 2SA985(3CA985)/2SA985A(3CA985A) Features: Wide Safe Operating Area, complementary to 2SA985(3CA985)/2SA985A(3CA985A). /Absolute Maximum Ratings(Ta=25)

 0.8. Size:198K  inchange semiconductor
2sc2275.pdf

2SC227
2SC227

isc Silicon NPN Power Transistor 2SC2275DESCRIPTIONCollector-Emitter Breakdown Voltage: V = 120V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SA985Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAudio frequency power amplifier applicationsHigh frequency power amplifier applicationsABSOLUTE MAXIMUM RATINGS(

 0.9. Size:125K  inchange semiconductor
2sc2275 2sc2275a.pdf

2SC227
2SC227

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2275 2SC2275A DESCRIPTION With TO-220 package Complement to type 2SA985/985A High breakdown voltage APPLICATIONS For low frequency and high frequency power amplifer applicatons PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterAbsolute maximum rating

 0.10. Size:216K  inchange semiconductor
2sc2270.pdf

2SC227
2SC227

isc Silicon NPN Power Transistor 2SC2270DESCRIPTIONHigh Collector Power DissipationP =10W(Tc=25), P =1.0W(Ta=25)C CHigh DC Current Gain: h =140~450@V =2V,I =0.5AFE CE Ch =70(Min)@V =2V,I =4AFE CE CLow Collector Saturation VoltageV =1.0V(Max)@I =4A,I 0.1ACE(sat) C B=Minimum Lot-to-Lot variations for robust device performanceand reliable operationAPPLIC

Otros transistores... 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , BD777 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .

History: KRC864F | 2N6086

 

 
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History: KRC864F | 2N6086

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