2SC2271E Datasheet. Equivalente

 8.1. Size:94K  toshiba
 2sc2270.pdf

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

 8.2. Size:38K  hitachi
 2sc2278.pdf

 8.3. Size:88K  no
 2sc2275.pdf

 8.4. Size:32K  no
 2sc2277.pdf

 8.5. Size:78K  secos
 2sc2274.pdf

2SC2274 0.5 A , 60 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES TO-92 High Breakdown Voltage G H High Current Low Saturation Voltage Emitter J Collector Base A D B CLASSIFICATION OF hFE(1) Millimeter REF. Min. Max. K Product-Rank 2SC2274-D

 8.6. Size:156K  jmnic
 2sc2275.pdf

JMnic Product Specification Silicon NPN Power Transistors 2SC2275 2SC2275A DESCRIPTION With TO-220 package Complement to type 2SA985/985A High breakdown voltage APPLICATIONS For low frequency and high frequency power amplifer applicatons PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=25 ) SYM

 8.7. Size:175K  foshan
 2sc2275-a 3da2275-a.pdf

2SC2275(3DA2275) 2SC2275A(3DA2275A) NPN /SILICON NPN TRANSISTOR Purpose Power amplifier applications. , 2SA985(3CA985)/2SA985A(3CA985A) Features Wide Safe Operating Area, complementary to 2SA985(3CA985)/2SA985A(3CA985A). /Absolute Maximum Ratings(Ta=25 )

 8.8. Size:198K  inchange semiconductor
 2sc2275.pdf

isc Silicon NPN Power Transistor 2SC2275 DESCRIPTION Collector-Emitter Breakdown Voltage V = 120V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SA985 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Audio frequency power amplifier applications High frequency power amplifier applications ABSOLUTE MAXIMUM RATINGS(

 8.9. Size:125K  inchange semiconductor
 2sc2275 2sc2275a.pdf

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2275 2SC2275A DESCRIPTION With TO-220 package Complement to type 2SA985/985A High breakdown voltage APPLICATIONS For low frequency and high frequency power amplifer applicatons PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum rating

 8.10. Size:216K  inchange semiconductor
 2sc2270.pdf

isc Silicon NPN Power Transistor 2SC2270 DESCRIPTION High Collector Power Dissipation P =10W(Tc=25 ), P =1.0W(Ta=25 ) C C High DC Current Gain h =140 450@V =2V,I =0.5A FE CE C h =70(Min)@V =2V,I =4A FE CE C Low Collector Saturation Voltage V =1.0V(Max)@I =4A,I 0.1A CE(sat) C B= Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLIC