2SC2280 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SC2280 📄📄
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 10 W
Tensión colector-base (Vcb): 38 V
Tensión colector-emisor (Vce): 18 V
Corriente del colector DC máxima (Ic): 0.75 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Capacitancia de salida (Cc): 10 pF
Ganancia de corriente contínua (hFE): 20
Encapsulados: TO128
📄📄 Copiar
Búsqueda de reemplazo de 2SC2280
- Selecciónⓘ de transistores por parámetros
2SC2280 datasheet
2sc2231.pdf
This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer
2sc2242.pdf
This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer
2sc2290.pdf
2SC2290 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2290 2 30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS (LOW SUPPLY VOLTAGE USE) Unit in mm Specified 12.5V, 28MHz Characteristics Output Power Po = 60W (Min.) PEP Power Gain Gp = 11.8dB (Min.) Collector Efficiency C = 35% (Min.) Intermodulation Distortion IMD = -30dB (Max.) MAXIMUM RATINGS (
2sc2270.pdf
This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer
2sc2216 2sc2717.pdf
2SC2216,2SC2717 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC2216,2SC2717 TV Final Picture IF Amplifier Applications Unit mm High gain Gpe = 33dB (typ.) (f = 45 MHz) Good linearity of h . FE Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit 2SC2216 50 Collector-base voltage VCBO V 2SC2717 30 2SC2216 45 Collector-emitter VCEO
2sc2240.pdf
2SC2240 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2240 Low Noise Audio Amplifier Applications Unit mm The 2SC2240 is a transistor for low frequency and low noise applications. This device is designed to lower noise figure in the region of low signal source impedance, and to lower the pulse noise. This is recommended for the first stages of Equalizer amplif
2sc2209.pdf
Power Transistors 2SC2209 Silicon NPN epitaxial planar type For low-frequency power amplification Unit mm 7.5+0.5 0.1 2.9 0.2 Complementary to 2SA0963 120 Features Large collector power dissipation PC Output of 5 W can be obtained by a complementary pair with 2SA0963 Absolute Maximum Ratings Ta = 25 C Parameter Symbol Rating Unit 0.75 0.1 Collector-base
2sc2295.pdf
Transistor 2SC2295 Silicon NPN epitaxial planer type For high-frequency amplification Unit mm Complementary to 2SA1022 +0.2 2.8 0.3 +0.25 Features 0.65 0.15 1.5 0.05 0.65 0.15 Optimum for RF amplification of FM/AM radios. High transition frequency fT. 1 Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the mag
2sc2258.pdf
Power Transistors 2SC2258 Silicon NPN triple diffusion planar type For high breakdown voltage general amplification Unit mm 8.0+0.5 0.1 3.2 0.2 3.16 0.1 Features High collector-emitter voltage (Base open) VCEO High transition frequency fT TO-126B package which requires no insulation plate for installa- tion to the heat sink Absolute Maximum Ratings Ta
2sc2295 e.pdf
Transistor 2SC2295 Silicon NPN epitaxial planer type For high-frequency amplification Unit mm Complementary to 2SA1022 +0.2 2.8 0.3 +0.25 Features 0.65 0.15 1.5 0.05 0.65 0.15 Optimum for RF amplification of FM/AM radios. High transition frequency fT. 1 Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the mag
2sc2206.pdf
Transistors 2SC2206 Silicon NPN epitaxial planar type For high-frequency amplification Unit mm Complementary to 2SA1254 2.5 0.1 6.9 0.1 (1.0) (1.5) (1.5) Features R 0.9 Optimum for RF amplification of FM/AM radios R 0.7 High transition frequency fT M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit
2sc2206 e.pdf
Transistor 2SC2206 Silicon NPN epitaxial planer type For high-frequency amplification Unit mm Complementary to 2SA1254 6.9 0.1 2.5 0.1 1.5 1.5 R0.9 1.0 Features R0.9 Optimum for RF amplification of FM/AM radios. High transition frequency fT. M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 0.85 0.55 0.1
2sc2235.pdf
UNISONIC TECHNOLOGIES CO., LTD 2SC2235 NPN SILICON TRANSISTOR AUDIO POWER AMPLIFIER APPLICATIONS DRIVER STAGE AMPLIFIER APPLICATIONS 1 TO-92 FEATURES * Complimentary to UTC 2SA965 1 TO-92NL ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2SC2235L-x-T92-B 2SC2235G-x-T92-B TO-92 E C B Tape Box 2SC2235L-x-T92-K 2S
2sc2216.pdf
2SC2216 0.05 A , 50 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES Amplifier dissipation NPN Silicon G H Base Emitter Collector J A D Millimeter REF. Min. Max. B A 4.40 4.70 B 4.30 4.70 K C 12.70 - D 3.30 3.81 E 0.36 0.56 F 0.36 0.51 E C F
2sc2235tm.pdf
2SC2235TM 0.8A , 120V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92MOD FEATURES Complementary to 2SA965 A D B CLASSIFICATION OF hFE Product-Rank 2SC2235TM-O 2SC2235TM-Y K E F Range 80-160 120-240 C N G H Emitter Collector Base M J L Collector
2sc2274.pdf
2SC2274 0.5 A , 60 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES TO-92 High Breakdown Voltage G H High Current Low Saturation Voltage Emitter J Collector Base A D B CLASSIFICATION OF hFE(1) Millimeter REF. Min. Max. K Product-Rank 2SC2274-D
2sc2236.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate Transistors TO-92L 2SC2236 TRANSISTOR (NPN) 1. EMITTER FEATURE 2. COLLECTOR Complementary to 2SA966 and 3 Watts Output Applications. 3. BASE Equivalent Circuit C2236=Device code C2236 Solid dot = Green molding compound device, if none, the normal device XXX=Code ORDERING INFOR
2sc2275.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC2275 2SC2275A DESCRIPTION With TO-220 package Complement to type 2SA985/985A High breakdown voltage APPLICATIONS For low frequency and high frequency power amplifer applicatons PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=25 ) SYM
2sc2238a.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC2238 2SC2238A 2SC2238B DESCRIPTION With TO-220 package Complement to type 2SA968 High breakdown votage APPLICATIONS Power amplifier applications Driver stage amplifier applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=25 )
2sc2258.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC2258 DESCRIPTION With TO-126 package High transition frequency fT High collector-emitter voltage VCEO APPLICATIONS For high breakdown voltage general amplification For video output amplification PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum
2sc2246.pdf
Product Specification www.jmnic.com Silicon Power Transistors 2SC2246 DESCRIPTION High voltage ,high speed With TO-3 package APPLICATIONS Power switching Power amplification power driver PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS
2sc2258a.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC2258A DESCRIPTION With TO-126 package High transition frequency fT High collector-emitter voltage VCEO APPLICATIONS High voltage general amplifier TV video output amplifier PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings(Ta=25 ) SYMB
2sc2235 to-92l.pdf
2SC2235 TO-92L Transistor (NPN) TO-92L 1. EMITTER 2. COLLECTER 3. BASE 4.700 5.100 2 3 1 Features 7.800 Complementary to 2SA965 B B 8.200 MAXIMUM RATINGS (TA=25 unless otherwise noted) 0.600 0.800 Symbol Parameter Value Units B 0.350 VCBOB Collector-Base Voltage 120 V B 0.550 13.800 VCEOB Collector-Emitter Voltage 120 V B 14.200 VEBOB Emitter-Base Volt
2sc2216.pdf
2SC2216(NPN) TO-92 Bipolar Transistors 1. BASE TO-92 2. EMITTER 3. COLLECTOR Features Amplifier dissipation NPN Silicon MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 45 V VEBO Emitter-Base Voltage 4 V Dimensions in inches and (millimeters) IC Collector Current -Continuo
2sc2236 to-92l.pdf
2SC2236 TO-92L Transistor (NPN) TO-92L 1. EMITTER 2. COLLECTOR 3. BASE 4.700 2 3 5.100 1 Features 7.800 8.200 Complementary to 2SA966 and 3 Watts output Applications. 0.600 0.800 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units 0.350 0.550 VCBO Collector-Base Voltage 30 V 13.800 14.200 VCEO Collector-Emitter Voltage 30 V VEBO Emitt
2sc2236 to-92mod.pdf
2SC2236 TO-92MOD Transistor (NPN) TO-92MOD 1. EMITTER 1 2 2. COLLECTOR 3 3. BASE Features 5.800 6.200 Complementary to 2SA966 and 3 Watts output Applications. 8.400 8.800 MAXIMUM RATINGS (TA=25 unless otherwise noted) 0.900 1.100 0.400 Symbol Parameter Value Units 0.600 VCBO Collector-Base Voltage 30 V 13.800 14.200 VCEO Collector-Emitter Voltage 30 V
2sc2230-2sc2230a.pdf
2SC2230/2SC2230A TO-92MOD Transistor (NPN) 1. EMITTER TO-92MOD 1 2. COLLECTOR 2 3 3. BASE Features 5.800 6.200 High voltage VCEO=180V(2SC2230A) 8.400 High DC Current Gain 8.800 0.900 1.100 0.400 0.600 13.800 14.200 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units 1.500 TYP 2.900 Dimensions in inches and (millimeters) VCBO
2sc2235 to-92mod.pdf
2SC2235 TO-92MOD Transistor (NPN) TO-92MOD 1 1. EMITTER 2 2. COLLECTER 3 3. BASE Features Complementary to 2SA965 5.800 6.200 MAXIMUM RATINGS (TB B=25 unless otherwise noted) A 8.400 8.800 Symbol Parameter Value Units 0.900 1.100 VB B Collector-Base Voltage 120 V CBO 0.400 0.600 VB B Collector-Emitter Voltage 120 V CEO VB B Emitter-Base Voltage 5 V 13
2sc2235.pdf
2SC2235 Rev.E Mar.-2016 DATA SHEET / Descriptions TO-92LM NPN Silicon NPN transistor in a TO-92LM Plastic Package. / Features 2SA965 Complementary to 2SA965. / Applications , Audio frequency amplifier and driver stage amplifier Applications. / Equivale
2sc2216m.pdf
2SC2216M(BR3DG2216M) Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-23 NPN Silicon NPN transistor in a SOT-23 Plastic Package. / Features ,h FE High gain, good hFE linearity. / Applications TV final picture IF amplifier applications. / Equival
2sc2240.pdf
2SC2240 Rev.E Mar.-2016 DATA SHEET / Descriptions TO-92 NPN Silicon NPN transistor in a TO-92 Plastic Package. / Features , , Low noise, high DC current gain, high breakdown voltage / Applications Low noise audio amplifier applications.
2sc2295.pdf
SMD Type Transistors NPN Transistors 2SC2295 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features High transition frequency fT. Complementary to 2SA1022 1 2 +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collector - Emitter Volt
2sc2223.pdf
SMD Type Transistors NPN Transistors 2SC2223 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 Features Collector Current Capability IC=20mA 1 2 Collector Emitter Voltage VCEO=20V +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Colle
2sc2275-a 3da2275-a.pdf
2SC2275(3DA2275) 2SC2275A(3DA2275A) NPN /SILICON NPN TRANSISTOR Purpose Power amplifier applications. , 2SA985(3CA985)/2SA985A(3CA985A) Features Wide Safe Operating Area, complementary to 2SA985(3CA985)/2SA985A(3CA985A). /Absolute Maximum Ratings(Ta=25 )
2sc2290a.pdf
HG RF POWER TRANSISTOR 2SC2290A Semiconductors HG ROHS Compliance,Silicon NPN POWER TRANSISTOR Spec ified 12.5, 28MHz Ch aracteristic V s Output Power Po = 60W (Min.) PEP Power Gain Gp = 11.8dB (Min.) Collect Efficiency = 35% (Min.) or C _30dB Intermodulation Distortion IMD = (M ax .) MAXIMUM RATINGS (Tc = 25 C) CHARACTERISTIC SYMBOL RATING UNIT Colle
2sc2246t3bl.pdf
2SC2246T3BL Silicon NPN Power Transistor DESCRIPTION High Collector-Emitter Sustaining Voltage- V = 400V (Min) CEO(SUS) High Switching Speed APPLICATIONS Power switching Power amplification Power driver ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER MAX UNIT V V Collector-Base Voltage 450 CBO V Collector-Emitter Voltage 400 V CEO V Emitter-Base Voltage 5 V
2sc2246.pdf
SPTECH Product Specification SPTECH Silicon NPN Power Transistor 2SC2246 DESCRIPTION High Collector-Emitter Sustaining Voltage- V = 600V (Min) CEO(SUS) High Switching Speed APPLICATIONS Power switching Power amplification Power driver ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER MAX UNIT V V Collector-Base Voltage 1000 CBO V Collector-Emitter Voltage 600 V
2sc2246.pdf
2SC2246 High Voltage Switching Power Transistor 25A,800V QUICK REFERENCE Part Number Industry Part IC VCBO VCEO PD Package Packing Marking TO-3 2SC2246 2SC2246 25A 800V 600V 200W 50Pcs plywood Silicon NPN Transistors NPN 50
2sc2248.pdf
isc Silicon NPN Power Transistor 2SC2248 DESCRIPTION High Collector-Emitter Sustaining Voltage- V = 400V (Min) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power switching Power amplification Power driver ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER MAX UNIT V Collector-Base Vo
2sc2242.pdf
isc Silicon NPN Power Transistor 2SC2242 DESCRIPTION High Breakdown Voltage- V = 300V(Min) (BR)CBO High Current-Gain Bandwidth Product- f = 20MHz(Min)@I = 20mA T C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Color TV sound output applications Recommended for sound output stage in line
2sc2293.pdf
isc Silicon NPN Power Transistor 2SC2293 DESCRIPTION High Collector-Emitter Sustaining Voltage- V = 400V (Min) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power switching Power amplification Power driver ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER MAX UNIT V Collector-Base Vo
2sc2209.pdf
isc Silicon NPN Power Transistor 2SC2209 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 40V(Min) (BR)CEO High Collector Power Dissipation Complement to Type 2SA963 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplification. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALU
2sc2247.pdf
isc Silicon NPN Power Transistor 2SC2247 DESCRIPTION High Collector-Emitter Sustaining Voltage- V = 400V (Min) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power switching Power amplification Power driver ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER MAX UNIT V Collector-Base Vo
2sc2266.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2266 DESCRIPTION With TO-3 Package Low collector saturation voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Designed for color TV horizontal deflection driver ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 500 V CBO
2sc2244.pdf
isc Silicon NPN Power Transistor 2SC2244 DESCRIPTION High Collector-Emitter Sustaining Voltage- V = 400V (Min) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power switching Power amplification Power driver ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER MAX UNIT V Collector-Base Vo
2sc2275.pdf
isc Silicon NPN Power Transistor 2SC2275 DESCRIPTION Collector-Emitter Breakdown Voltage V = 120V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SA985 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Audio frequency power amplifier applications High frequency power amplifier applications ABSOLUTE MAXIMUM RATINGS(
2sc2292.pdf
isc Silicon NPN Power Transistor 2SC2292 DESCRIPTION High Collector-Emitter Sustaining Voltage- V = 400V (Min) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power switching Power amplification Power driver ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER MAX UNIT V Collector-Base Vo
2sc2258.pdf
isc Silicon NPN Power Transistor 2SC2258 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 250V(Min) (BR)CEO High Current-Gain Bandwidth Product Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For high breakdown voltage general amplification For video output amplification ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL
2sc2275 2sc2275a.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2275 2SC2275A DESCRIPTION With TO-220 package Complement to type 2SA985/985A High breakdown voltage APPLICATIONS For low frequency and high frequency power amplifer applicatons PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum rating
2sc2260.pdf
isc Silicon NPN Power Transistor 2SC2260 DESCRIPTION High Power Dissipation- P = 80W(Max.)@T =25 C C Collector-Emitter Breakdown Voltage- V = 100V(Min.) (BR)CEO Complement to Type 2SA980 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SY
2sc2238.pdf
isc Silicon NPN Power Transistor 2SC2238 DESCRIPTION Collector-Emitter Breakdown Voltage V =160V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SA968 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Driver stage amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARA
2sc2239.pdf
isc Silicon NPN Power Transistor 2SC2239 DESCRIPTION Collector-Emitter Breakdown Voltage V =160V(Min) (BR)CEO Good Linearity of h FE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Driver stage amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector
2sc2233.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2233 DESCRIPTION Collector-Emitter Breakdown Voltage- VCEO= 60V(Min) DC Current Gain- hFE= 30(Min)@ (VCE= 5V, IC= 1A) High Collector Current High Collector Power Dissipation APPLICATIONS TV Horizontal Deflection Output Application ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL P
2sc2246.pdf
isc Silicon NPN Power Transistor 2SC2246 DESCRIPTION High Collector-Emitter Sustaining Voltage- V = 400V (Min) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power switching Power amplification Power driver ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER MAX UNIT V Collector-Base Vo
2sc2258a.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2258A DESCRIPTION With TO-126 package High transition frequency fT High collector-emitter voltage VCEO APPLICATIONS High voltage general amplifier TV video output amplifier PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings
2sc2238b.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2238B DESCRIPTION Collector-Emitter Breakdown Voltage V =200V (BR)CEO Good Linearity of h FE Complement to Type 2SA968B Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Driver stage amplifier applications ABSOLUTE MAXIMUM RATINGS(T =2
2sc2262.pdf
isc Silicon NPN Power Transistor 2SC2262 DESCRIPTION High Power Dissipation- P = 80W(Max.)@T =25 C C Collector-Emitter Breakdown Voltage- V = 140V(Min.) (BR)CEO Complement to Type 2SA982 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SY
2sc2270.pdf
isc Silicon NPN Power Transistor 2SC2270 DESCRIPTION High Collector Power Dissipation P =10W(Tc=25 ), P =1.0W(Ta=25 ) C C High DC Current Gain h =140 450@V =2V,I =0.5A FE CE C h =70(Min)@V =2V,I =4A FE CE C Low Collector Saturation Voltage V =1.0V(Max)@I =4A,I 0.1A CE(sat) C B= Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLIC
2sc2243.pdf
isc Silicon NPN Power Transistor 2SC2243 DESCRIPTION High Collector-Emitter Sustaining Voltage- V = 400V (Min) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power switching Power amplification Power driver ABSOLUTE MAXIMUM RATINGS(T =25 ) a UNIT SYMBOL PARAMETER MAX V Collector-Base V
2sc2229.pdf
INCHANGE Semiconductor isc Silicon NPN Pow Transistor 2SC2229 DESCRIPTION High breakdown voltage Low output capacitance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High voltage switching applications Driver stage audio amplifier applications Black and white TV video output applications ABSOLUTE M
2sc2261.pdf
isc Silicon NPN Power Transistor 2SC2261 DESCRIPTION High Power Dissipation- P = 80W(Max.)@T =25 C C Collector-Emitter Breakdown Voltage- V = 120V(Min.) (BR)CEO Complement to Type 2SA981 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SY
2sc2245.pdf
isc Silicon NPN Power Transistor 2SC2245 DESCRIPTION High Collector-Emitter Sustaining Voltage- V = 400V (Min) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power switching Power amplification Power driver ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER MAX UNIT V Collector-Base Vo
2sc2238 2sc2238a 2sc2238b.pdf
isc Silicon NPN Power Transistor 2SC2238 A B DESCRIPTION With TO-220 packaging Complement to Type 2SA968 A B Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS AC-DC motor control Electronic ignition Alternator regulator ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT 2SC2238 160 V Collector-Base Voltage 2SC
Otros transistores... 2SC2274K, 2SC2275, 2SC2275A, 2SC2276, 2SC2277, 2SC2278, 2SC2279, 2SC228, TIP120, 2SC2281, 2SC2282, 2SC2283, 2SC2284, 2SC2284A, 2SC2285, 2SC2286, 2SC2287
History: TP3416 | KD712
🌐 : EN ES РУ
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550
Popular searches
s9015 transistor | irf540z | ss8550 transistor | irfp240 mosfet | tip141 | 2n404 | 2n4250 | d882 transistor equivalent