2SC2293 Datasheet. Equivalente

 ..1. Size:213K  inchange semiconductor
 2sc2293.pdf

isc Silicon NPN Power Transistor 2SC2293 DESCRIPTION High Collector-Emitter Sustaining Voltage- V = 400V (Min) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power switching Power amplification Power driver ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER MAX UNIT V Collector-Base Vo

 8.1. Size:169K  toshiba
 2sc2290.pdf

2SC2290 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2290 2 30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS (LOW SUPPLY VOLTAGE USE) Unit in mm Specified 12.5V, 28MHz Characteristics Output Power Po = 60W (Min.) PEP Power Gain Gp = 11.8dB (Min.) Collector Efficiency C = 35% (Min.) Intermodulation Distortion IMD = -30dB (Max.) MAXIMUM RATINGS (

 8.2. Size:51K  panasonic
 2sc2295.pdf

Transistor 2SC2295 Silicon NPN epitaxial planer type For high-frequency amplification Unit mm Complementary to 2SA1022 +0.2 2.8 0.3 +0.25 Features 0.65 0.15 1.5 0.05 0.65 0.15 Optimum for RF amplification of FM/AM radios. High transition frequency fT. 1 Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the mag

 8.3. Size:51K  panasonic
 2sc2295 e.pdf

Transistor 2SC2295 Silicon NPN epitaxial planer type For high-frequency amplification Unit mm Complementary to 2SA1022 +0.2 2.8 0.3 +0.25 Features 0.65 0.15 1.5 0.05 0.65 0.15 Optimum for RF amplification of FM/AM radios. High transition frequency fT. 1 Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the mag

 8.4. Size:348K  hitachi
 2sc2298.pdf

 8.5. Size:1104K  kexin
 2sc2295.pdf

SMD Type Transistors NPN Transistors 2SC2295 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features High transition frequency fT. Complementary to 2SA1022 1 2 +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collector - Emitter Volt

 8.6. Size:339K  hgsemi
 2sc2290a.pdf

HG RF POWER TRANSISTOR 2SC2290A Semiconductors HG ROHS Compliance,Silicon NPN POWER TRANSISTOR Spec ified 12.5, 28MHz Ch aracteristic V s Output Power Po = 60W (Min.) PEP Power Gain Gp = 11.8dB (Min.) Collect Efficiency = 35% (Min.) or C _30dB Intermodulation Distortion IMD = (M ax .) MAXIMUM RATINGS (Tc = 25 C) CHARACTERISTIC SYMBOL RATING UNIT Colle

 8.7. Size:213K  inchange semiconductor
 2sc2292.pdf

isc Silicon NPN Power Transistor 2SC2292 DESCRIPTION High Collector-Emitter Sustaining Voltage- V = 400V (Min) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power switching Power amplification Power driver ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER MAX UNIT V Collector-Base Vo