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2SC2307 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SC2307
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 100 W
   Tensión colector-base (Vcb): 400 V
   Tensión colector-emisor (Vce): 400 V
   Corriente del colector DC máxima (Ic): 12 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 20
   Paquete / Cubierta: TO218

 Búsqueda de reemplazo de transistor bipolar 2SC2307

 

2SC2307 Datasheet (PDF)

 ..1. Size:148K  jmnic
2sc2307.pdf

2SC2307
2SC2307

JMnic Product Specification Silicon NPN Power Transistors 2SC2307 DESCRIPTION With TO-3PN package High voltage ,high speed APPLICATIONS For power switching applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS MAX

 ..2. Size:196K  inchange semiconductor
2sc2307.pdf

2SC2307
2SC2307

isc Silicon NPN Power Transistor 2SC2307DESCRIPTIONCollector-Emitter Breakdown Voltage-V = 400V(Min)(BR)CEOHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator and general purposeapplicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Bas

 8.1. Size:23K  hitachi
2sc2309.pdf

2SC2307
2SC2307

2SC2309Silicon NPN EpitaxialApplicationLow frequency amplifierOutlineTO-92 (1)1. Emitter2. Collector3. Base3212SC2309Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 55 VCollector to emitter voltage VCEO 50 VEmitter to base voltage VEBO 5VCollector current IC 100 mACollector power dissipation PC 200 mWJunction t

 8.2. Size:27K  hitachi
2sc458 2sc2308.pdf

2SC2307
2SC2307

2SC458, 2SC2308Silicon NPN EpitaxialApplication Low frequency amplifier Complementary pair with 2SA1029 and 2SA1030OutlineTO-92 (1)1. Emitter2. Collector3. Base3212SC458, 2SC2308Absolute Maximum Ratings (Ta = 25C)Item Symbol 2SC458 2SC2308 UnitCollector to base voltage VCBO 30 55 VCollector to emitter voltage VCEO 30 50 VEmitter to base voltage VEBO

 8.3. Size:99K  jmnic
2sc2305.pdf

2SC2307
2SC2307

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC2305 DESCRIPTION With TO-3PN package High breakdown voltage Fast switching speed Wide safe operating area APPLICATIONS For switching regulator applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterFig.1 simplified outline (TO-3PN) and symbol

 8.4. Size:187K  inchange semiconductor
2sc2305.pdf

2SC2307
2SC2307

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC2305DESCRIPTIONWith TO-3 PackageLow collector saturation voltageMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for color TV horizontal deflection driverABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 400 VCBO

 8.5. Size:178K  inchange semiconductor
2sc2304.pdf

2SC2307
2SC2307

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC2304DESCRIPTIONWith TO-3 PackageLow collector saturation voltageMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for color TV horizontal deflection driverABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 500 VCBO

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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