2SC2308
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SC2308
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.2
W
Tensión colector-base (Vcb): 55
V
Tensión colector-emisor (Vce): 50
V
Tensión emisor-base (Veb): 5
V
Corriente del colector DC máxima (Ic): 0.1
A
Temperatura operativa máxima (Tj): 125
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 115
MHz
Capacitancia de salida (Cc): 1.8
pF
Ganancia de corriente contínua (hfe): 100
Paquete / Cubierta:
TO92
Búsqueda de reemplazo de transistor bipolar 2SC2308
2SC2308
Datasheet (PDF)
..1. Size:27K hitachi
2sc458 2sc2308.pdf
2SC458, 2SC2308Silicon NPN EpitaxialApplication Low frequency amplifier Complementary pair with 2SA1029 and 2SA1030OutlineTO-92 (1)1. Emitter2. Collector3. Base3212SC458, 2SC2308Absolute Maximum Ratings (Ta = 25C)Item Symbol 2SC458 2SC2308 UnitCollector to base voltage VCBO 30 55 VCollector to emitter voltage VCEO 30 50 VEmitter to base voltage VEBO
8.1. Size:23K hitachi
2sc2309.pdf
2SC2309Silicon NPN EpitaxialApplicationLow frequency amplifierOutlineTO-92 (1)1. Emitter2. Collector3. Base3212SC2309Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 55 VCollector to emitter voltage VCEO 50 VEmitter to base voltage VEBO 5VCollector current IC 100 mACollector power dissipation PC 200 mWJunction t
8.2. Size:148K jmnic
2sc2307.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC2307 DESCRIPTION With TO-3PN package High voltage ,high speed APPLICATIONS For power switching applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS MAX
8.3. Size:99K jmnic
2sc2305.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC2305 DESCRIPTION With TO-3PN package High breakdown voltage Fast switching speed Wide safe operating area APPLICATIONS For switching regulator applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterFig.1 simplified outline (TO-3PN) and symbol
8.4. Size:196K inchange semiconductor
2sc2307.pdf
isc Silicon NPN Power Transistor 2SC2307DESCRIPTIONCollector-Emitter Breakdown Voltage-V = 400V(Min)(BR)CEOHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator and general purposeapplicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Bas
8.5. Size:187K inchange semiconductor
2sc2305.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC2305DESCRIPTIONWith TO-3 PackageLow collector saturation voltageMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for color TV horizontal deflection driverABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 400 VCBO
8.6. Size:178K inchange semiconductor
2sc2304.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC2304DESCRIPTIONWith TO-3 PackageLow collector saturation voltageMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for color TV horizontal deflection driverABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 500 VCBO
Otros transistores... 2SA1801
, 2SA1802
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, 2SA1803R
, 2SA1804
, 2SA1804O
, TIP35C
, 2SA1805
, 2SA1805O
, 2SA1805R
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, 2SA181
, 2SA1810
, 2SA1810B
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.