2SC2323 Todos los transistores

 

2SC2323 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SC2323

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 120 W

Tensión colector-base (Vcb): 150 V

Tensión colector-emisor (Vce): 150 V

Tensión emisor-base (Veb): 4 V

Corriente del colector DC máxima (Ic): 12 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 30 MHz

Capacitancia de salida (Cc): 300 pF

Ganancia de corriente contínua (hfe): 100

Empaquetado / Estuche: TO3

Búsqueda de reemplazo de transistor bipolar 2SC2323

 

2SC2323 Datasheet (PDF)

4.1. 2sc2328a.pdf Size:113K _utc

2SC2323
2SC2323

UNISONIC TECHNOLOGIES CO., LTD 2SC2328A NPN EPITAXIAL SILICON TRANSISTOR AUDIO POWER AMPLIFIER FEATURES * Collector Dissipation Pc=1 W * 3 W Output Application * Complement of 2SA928A ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2SC2328AL-x-T92-B 2SC2328AG-x-T92-B TO-92 E C B Tape Box 2SC2328AL-x-T92-K 2SC2328AG-x-T92-K

4.2. 2sc2324.pdf Size:33K _hitachi

2SC2323
2SC2323

2SC2324(K) Silicon NPN Epitaxial Application Low frequency power amplifier Outline TO-126 MOD 2 3 1. Emitter 2. Collector 3. Base 1 2 3 1 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Collector to base voltage VCBO 60 V Collector to emitter voltage VCEO 60 V Emitter to base voltage VEBO 7V Collector current IC 1A Collector peak current IC(peak) 2A Collector po

 5.1. 2sc2335f.pdf Size:201K _update

2SC2323
2SC2323

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC2335F DESCRIPTION ·With TO-220F package ·Collector-emitter sustaining voltage VCEO(sus)=400V(Min) ·Collector-emitter saturation voltage VCE(sat)=1.0V(Max.)@IC=3.0A,IB=0.6A ·Switching time-tf=1.0µs(Max.)@IC=3.0A APPLICATIONS ·Designed for use in high-voltage ,high- speed ,power switching

5.2. 2sc2389s.pdf Size:111K _update

2SC2323

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92S Plastic-Encapsulate Transistors TO – 92S 2SC2389S TRANSISTOR (NPN) 1. EMITTER FEATURES 2. COLLECTOR High Breakdown Voltage. 3. BASE Complements the 2SA1038S. MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V

 5.3. 2sc2383-y.pdf Size:268K _update

2SC2323
2SC2323

2SC2383-R MCC TM Micro Commercial Components Micro Commercial Components 20736 Marilla Street Chatsworth 2SC2383-O CA 91311 Phone: (818) 701-4933 2SC2383-Y Fax: (818) 701-4939 Features • Capable of 0.9Watts of Power Dissipation. NPN Silicon • Collector-current 1.0A • Collector-base Voltage 160V Plastic-Encapsulate • Operating and storage junction temperature range: -55O

5.4. 2sc2383-o.pdf Size:268K _update

2SC2323
2SC2323

2SC2383-R MCC TM Micro Commercial Components Micro Commercial Components 20736 Marilla Street Chatsworth 2SC2383-O CA 91311 Phone: (818) 701-4933 2SC2383-Y Fax: (818) 701-4939 Features • Capable of 0.9Watts of Power Dissipation. NPN Silicon • Collector-current 1.0A • Collector-base Voltage 160V Plastic-Encapsulate • Operating and storage junction temperature range: -55O

 5.5. 2sc2383-r.pdf Size:268K _update

2SC2323
2SC2323

2SC2383-R MCC TM Micro Commercial Components Micro Commercial Components 20736 Marilla Street Chatsworth 2SC2383-O CA 91311 Phone: (818) 701-4933 2SC2383-Y Fax: (818) 701-4939 Features • Capable of 0.9Watts of Power Dissipation. NPN Silicon • Collector-current 1.0A • Collector-base Voltage 160V Plastic-Encapsulate • Operating and storage junction temperature range: -55O

5.6. 2sc2344 3da2344.pdf Size:232K _update

2SC2323
2SC2323

2SC2344(3DA2344) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途:用于高压开关,音频功率放大,100W 输出前置放大。 Purpose: High voltage switching, AF power amplifier, 100W output predriver applications. 特点:与 2SA1011(3CA1011)互补。 Features: complementary pair with 2SA1011(3CA1011). 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数

5.7. 2sc2347.pdf Size:291K _toshiba

2SC2323
2SC2323

2SC2347 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC2347 TV UHF Oscillator Applications Unit: mm TV VHF Mixer Applications Maximum Ratings (Ta = = 25°C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 30 V Collector-emitter voltage VCEO 15 V Emitter-base voltage VEBO 3 V Collector current IC 50 mA Emitter current IE -50 mA Collector power

5.8. 2sc2395.pdf Size:140K _toshiba

2SC2323
2SC2323



5.9. 2sc2349.pdf Size:293K _toshiba

2SC2323
2SC2323

2SC2349 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC2349 TV VHF Oscillator Applications Unit: mm Maximum Ratings (Ta = = 25°C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 30 V Collector-emitter voltage VCEO 15 V Emitter-base voltage VEBO 3 V Collector current IC 50 mA Emitter current IE -50 mA Collector power dissipation PC 250 mW Junct

5.10. 2sc2383.pdf Size:140K _toshiba

2SC2323
2SC2323

2SC2383 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC2383 Color TV Vertical Deflection Output Applications Unit: mm Color TV Class-B Sound Output Applications • High breakdown voltage: VCEO = 160 V • Large continuous collector current capability • Recommended for vertical deflection output & sound output applications for line-operated TVs. • Complem

5.11. 2sc2362k.pdf Size:55K _sanyo

2SC2323
2SC2323

Ordering number:ENN572E PNP/NPN Epitaxial Planar Silicon Transistors 2SA1016, 1016K/2SC2362, 2362K High-Voltage Low-Noise Amp Applications Package Dimensions unit:mm 2003B [2SA1016, 1016K/2SC2362, 2362K] 5.0 4.0 4.0 0.45 0.5 0.44 0.45 1 2 3 1 : Emitter ( ) : 2SA1016, 1016K 2 : Collecor 3 : Base Specifications 1.3 1.3 SANYO : NP Absolute Maximum Ratings at Ta = 25?C 2SA1016K,

5.12. 2sa1016 2sc2362.pdf Size:55K _sanyo

2SC2323
2SC2323

Ordering number:ENN572E PNP/NPN Epitaxial Planar Silicon Transistors 2SA1016, 1016K/2SC2362, 2362K High-Voltage Low-Noise Amp Applications Package Dimensions unit:mm 2003B [2SA1016, 1016K/2SC2362, 2362K] 5.0 4.0 4.0 0.45 0.5 0.44 0.45 1 2 3 1 : Emitter ( ) : 2SA1016, 1016K 2 : Collecor 3 : Base Specifications 1.3 1.3 SANYO : NP Absolute Maximum Ratings at Ta = 25?C 2SA1016K,

5.13. 2sc2314.pdf Size:85K _sanyo

2SC2323
2SC2323

5.14. 2sc2344.pdf Size:42K _sanyo

2SC2323
2SC2323

Ordering number:ENN544G PNP/NPN Epitaxial Planar Silicon Transistors 2SA1011/2SC2344 High-Voltage Switching, AF Power Amp, 100W Output Predriver Applications Package Dimensions unit:mm 2010C [2SA1011/2SC2344] 10.2 4.5 3.6 5.1 1.3 1.2 0.8 0.4 1 2 3 1 : Base ( ) : 2SA1011 2 : Collector 3 : Emitter 2.55 2.55 Specifications SANYO : TO220AB Absolute Maximum Ratings at Ta = 25?C

5.15. 2sc2353.pdf Size:37K _nec

2SC2323

5.16. 2sc2369.pdf Size:32K _nec

2SC2323

5.17. 2sc2368.pdf Size:32K _nec

2SC2323

5.18. 2sc2351.pdf Size:30K _nec

2SC2323
2SC2323

DATA SHEET SILICON TRANSISTOR 2SC2351 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES NF 1.5 dB TYP. @ f = 1.0 GHz PACKAGE DIMENSIONS (Units: mm) MAG 14 dB TYP. @ f = 1.0 GHz 2.80.2 +0.1 1.5 0.65-0.15 ABSOLUTE MAXIMUM RATINGS (TA = 25 C) Collector to Base Voltage VCBO 25 V 2 Collector to Emitter Voltage VCEO 12 V Emitter to Base Volta

5.19. 2sc2334.pdf Size:116K _nec

2SC2323
2SC2323

DATA SHEET SILICON POWER TRANSISTOR 2SC2334 NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SC2334 is a mold power transistor developed for high-speed ORDERING INFORMATION switching, and is ideal for use as a driver in devices such as switching Part No. Package regulators, DC/DC converters, and high-frequency power amplifiers. 2SC2334 TO-220AB FEATURES Low collec

5.20. 2sa1006 2sa1006a 2sa1006b 2sc2336 2sc2336a2sc2336b 1.pdf Size:194K _nec

2SC2323
2SC2323

This Material Copyrighted By Its Respective Manufacturer

5.21. 2sc2352.pdf Size:36K _nec

2SC2323

5.22. 2sc2333.pdf Size:164K _nec

2SC2323
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5.23. 2sa1006-a-b 2sc2336-a-b.pdf Size:194K _nec

2SC2323
2SC2323

This Material Copyrighted By Its Respective Manufacturer

5.24. 2sc2335.pdf Size:118K _nec

2SC2323
2SC2323

DATA SHEET SILICON POWER TRANSISTOR 2SC2335 NPN SILICON TRIPLE DIFFUSED TRANSISTOR FOR HIGH-SPEED HIGH-VOLTAGE SWITCHING The 2SC2335 is a mold power transistor developed for high-speed ORDERING INFORMATION high-voltage switching, and is ideal for use as a driver in devices such Part No. Package as switching regulators, DC/DC converters, and high-frequency power 2SC2335 TO-220AB amplifier

5.25. 2sc2331.pdf Size:265K _nec

2SC2323
2SC2323

5.26. 2sc2351 2sc2149 2sc4092 ne02133 ne02135 ne02139.pdf Size:171K _nec

2SC2323
2SC2323

NEC's NPN SILICON HIGH NE021 FREQUENCY TRANSISTOR SERIES FEATURES HIGH INSERTION GAIN: 18.5 dB at 500 MHz LOW NOISE FIGURE: 1.5 dB at 500 MHz HIGH POWER GAIN: 12 dB at 2 GHz LARGE DYNAMIC RANGE: 19 dBm at 1 dB, 2 GHz Gain Compression DESCRIPTION 00 (CHIP) 07/07B NEC's NE021 series of NPN silicon transistors provides eco- nomical solutions to wide ranges of amplifier and oscillat

5.27. 2sc4102 2sc3906k 2sc2389s.pdf Size:67K _rohm

2SC2323
2SC2323

2SC4102 / 2SC3906K / 2SC2389S Transistors High-voltage Amplifier Transistor (120V, 50mA) 2SC4102 / 2SC3906K / 2SC2389S External dimensions (Unit : mm) Features 1) High breakdown voltage. (BVCEO = 120V) 2SC4102 2) Complements the 2SA1579 / 2SA1514K / 2SA1038S. 1.25 Absolute maximum ratings (Ta=25C) 2.1 Parameter Symbol Limits Unit Collector-base voltage VCBO 120 V Colle

5.28. 2sc2377 e.pdf Size:62K _panasonic

2SC2323
2SC2323

Transistor 2SC2377 Silicon NPN epitaxial planer type For high-frequency amplification Unit: mm 6.9 0.1 2.5 0.1 1.5 1.5 R0.9 1.0 Features R0.9 Optimum for RF amplification of FM/AM radios. High transition frequency fT. M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 0.85 0.55 0.1 0.45 0.05 Absolute Maximum Ra

5.29. 2sc2377.pdf Size:110K _panasonic

2SC2323
2SC2323

Transistors 2SC2377 Silicon NPN epitaxial planar type For high-frequency amplification Unit: mm 2.50.1 6.90.1 (1.0) (1.5) Features (1.5) Optimum for RF amplification of FM/AM radios High transition frequency fT R 0.9 M type package allowing easy automatic and manual insertion R 0.7 as well as stand-alone fixing to the printed circuit board (0.85) Absolute Maximum Ratings

5.30. 2sc2383.pdf Size:65K _utc

2SC2323
2SC2323

UNISONIC TECHNOLOGIES CO., LTD 2SC2383 Preliminary NPN EPITAXIAL SILICON TRANSISTOR COLOR TV AUDIO OUTPUT & COLOR TV VERTICAL OUTPUT DESCRIPTION The UTC 2SC2383 is an NPN epitaxial silicon transistor, it uses UTC’s advanced technology to provide customers high DC current gain and high breakdown voltage. The UTC 2SC2383 is usually used in Color TV Vertical Deflection Output an

5.31. 2sc2356.pdf Size:237K _fuji

2SC2323
2SC2323

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

5.32. 2sc2396 2sc2543 2sc2544.pdf Size:24K _hitachi

2SC2323
2SC2323

2SC2396, 2SC2543, 2SC2544 Silicon NPN Epitaxial Application Low frequency amplifier Complementary pair with 2SA1025, 2SA1081 and 2SA1082 Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SC2396, 2SC2543, 2SC2544 Absolute Maximum Ratings (Ta = 25C) Item Symbol 2SC2396 2SC2543 2SC2544 Unit Collector to base voltage VCBO 60 90 120 V Collector to emitter voltage VCEO 60 9

5.33. 2sc458 2sc2308.pdf Size:27K _hitachi

2SC2323
2SC2323

2SC458, 2SC2308 Silicon NPN Epitaxial Application Low frequency amplifier Complementary pair with 2SA1029 and 2SA1030 Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SC458, 2SC2308 Absolute Maximum Ratings (Ta = 25C) Item Symbol 2SC458 2SC2308 Unit Collector to base voltage VCBO 30 55 V Collector to emitter voltage VCEO 30 50 V Emitter to base voltage VEBO 55V Col

5.34. 2sc2310 2sc458.pdf Size:41K _hitachi

2SC2323
2SC2323

2SC458 (LG), 2SC2310 Silicon NPN Epitaxial Application Low frequency low noise amplifier Complementary pair with 2SA1031 and 2SA1032 Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SC458 (LG), 2SC2310 Absolute Maximum Ratings (Ta = 25C) Item Symbol 2SC458 (LG) 2SC2310 Unit Collector to base voltage VCBO 30 55 V Collector to emitter voltage VCEO 30 50 V Emitter to b

5.35. 2sc2309.pdf Size:23K _hitachi

2SC2323
2SC2323

2SC2309 Silicon NPN Epitaxial Application Low frequency amplifier Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SC2309 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Collector to base voltage VCBO 55 V Collector to emitter voltage VCEO 50 V Emitter to base voltage VEBO 5V Collector current IC 100 mA Collector power dissipation PC 200 mW Junction tempe

5.36. 2sc2312.pdf Size:93K _mitsubishi

2SC2323
2SC2323

5.37. 2sc2373.pdf Size:106K _mospec

2SC2323
2SC2323

A A A

5.38. 2sc2335.pdf Size:131K _mospec

2SC2323
2SC2323

A A A

5.39. 2sc2333.pdf Size:158K _savantic

2SC2323
2SC2323

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC2333 DESCRIPTION With TO-220C package High speed switching Low collector saturation voltage APPLICATIONS Switching regulator DC-DC converter Ultrasonic appliance PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL

5.40. 2sc2331.pdf Size:99K _savantic

2SC2323
2SC2323

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC2331 DESCRIPTION With TO-220 package Complement to type 2SA1008 Low collector saturation voltage Fast switching speed APPLICATIONS Switching regulators DC-DC converters High frequency power amplifiers PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simpli

5.41. 2sc2383.pdf Size:71K _secos

2SC2323

2SC2383 1A , 160V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-89 FEATURES Small Flat Package 4 General Purpose Application 1 2 3 B C A CLASSIFICATION OF hFE E E C Product-Rank 2SC2383-O 2SC2383-Y Range 100~200 160~320 B D F G H K Collector PACKAGE INFORMATION

5.42. 2sc2367.pdf Size:97K _advanced-semi

2SC2323

2SC2367 NPN SILICON HI FREQUNCY TRANSISTOR DESCRIPTION: The ASI 2SC2367 is Designed for general purpose and small signal PACKAGE STYLE .100 4L PILL amplifier and oscillator applications up to 6.0 GHz. FEATURES INCLUDE:  High frequency 8.0 GH  Low noise, 1 dB at 0.5 GHz. MAXIMUM RATINGS: IC 80 mA VCBO 20 V VCEO 10 V VEBO 1.5 V PDISS 580 mW @ TA = 25 °C TJ

5.43. 2sc2373.pdf Size:177K _jmnic

2SC2323
2SC2323

JMnic Product Specification Silicon NPN Power Transistors 2SC2373 DESCRIPTION ·With TO-220 package ·Low collector saturation voltage ·Fast switching time APPLICATIONS ·For use in horizontal deflection output for B/W TV applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings (Ta=25?) SYMBOL PARAMETER C

5.44. 2sc2371.pdf Size:145K _jmnic

2SC2323
2SC2323

JMnic Product Specification Silicon NPN Power Transistors 2SC2371 DESCRIPTION ·With TO-126 package ·High Voltage ·High frequency APPLICATIONS ·For TV chroma output and vertical output applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Absolute maximum ratings (Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 300

5.45. 2sc2307.pdf Size:148K _jmnic

2SC2323
2SC2323

JMnic Product Specification Silicon NPN Power Transistors 2SC2307 DESCRIPTION ·With TO-3PN package ·High voltage ,high speed APPLICATIONS ·For power switching applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS MAX UNIT

5.46. 2sc2334.pdf Size:176K _jmnic

2SC2323
2SC2323

Product Specification www.jmnic.com Silicon NPN Power Transistor 2SC2334 DESCRIPTION ·Low Collector Saturation Voltage ·Fast Switching Speed ·Complement to Type 2SA1010 APPLICATIONS ·Developed for high-voltage high-speed switching, and is ideal for use as a driver in devices such as switching reg- lators, DC/DC converters, and high frequency power am- plifiers. ABSOLUT

5.47. 2sc2344.pdf Size:208K _jmnic

2SC2323
2SC2323

JMnic Product Specification Silicon NPN Power Transistors 2SC2344 DESCRIPTION ·With TO-220 package ·Complement to type 2SA1011 APPLICATIONS ·High voltage switching ·Audio frequency power amplifier; ·100W output predriver applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol 3 Emitter Absol

5.48. 2sc2336.pdf Size:196K _jmnic

2SC2323
2SC2323

JMnic Product Specification Silicon NPN Power Transistors 2SC2336 2SC2336A 2SC2336B DESCRIPTION ·With TO-220 package ·Complement to type 2SA1006, 2SA1006A,2SA1006B APPLICATIONS ·Audio frequency power amplifier ·High frequency power amplifier PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol 3 Emitte

5.49. 2sc2365.pdf Size:332K _jmnic

2SC2323
2SC2323

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC2365 DESCRIPTION ·With TO-3 package ·High breakdown voltage APPLICATIONS ·For use in switch-mode CTV supply systems PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Col

5.50. 2sc2333.pdf Size:248K _jmnic

2SC2323
2SC2323

JMnic Product Specification Silicon NPN Power Transistors 2SC2333 DESCRIPTION · ·With TO-220C package ·High speed switching ·Low collector saturation voltage APPLICATIONS ·Switching regulator ·DC-DC converter ·Ultrasonic appliance PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER

5.51. 2sc2335.pdf Size:205K _jmnic

2SC2323
2SC2323

JMnic Product Specification Silicon NPN Power Transistors 2SC2335 DESCRIPTION · ·With TO-220C package ·Collector-emitter sustaining voltage VCEO(sus)=400V(Min) ·Collector-emitter saturation voltage VCE(sat)=1.0V(Max.)@IC=3.0A,IB=0.6A ·Switching time-tf=1.0?s(Max.)@IC=3.0A APPLICATIONS ·Designed for use in high-voltage ,high- speed ,power switching in inductive circuit

5.52. 2sc2331.pdf Size:45K _jmnic

2SC2323
2SC2323

Product Specification www.jmnic.com Silicon Power Transistors 2SC2331 DESCRIPTION ·With TO-220 package ·Complement to type 2SA1008 ·Low collector saturation voltage ·Fast switching speed APPLICATIONS ·Switching regulators ·DC/DC converters ·High frequency power amplifiers PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Fig.1

5.53. 2sc2305.pdf Size:99K _jmnic

2SC2323
2SC2323

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC2305 DESCRIPTION · ·With TO-3PN package ·High breakdown voltage ·Fast switching speed ·Wide safe operating area APPLICATIONS ·For switching regulator applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol Abs

5.54. 2sc2315 2sc2316.pdf Size:72K _sanken-ele

2SC2323

5.55. 2sc2373.pdf Size:140K _inchange_semiconductor

2SC2323
2SC2323

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2373 DESCRIPTION Ў¤ With TO-220 package Ў¤ Low collector saturation voltage Ў¤ Fast switching time APPLICATIONS Ў¤ For use in horizontal deflection output for B/W TV applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings (Ta=25Ўж )

5.56. 2sc2371.pdf Size:115K _inchange_semiconductor

2SC2323
2SC2323

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2371 DESCRIPTION Ў¤ With TO-126 package Ў¤ High Voltage Ў¤ High frequency APPLICATIONS Ў¤ For TV chroma output and vertical output applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector Base Absolute maximum ratings (Ta=25Ўж ) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER CHA IN Co

5.57. 2sc2361.pdf Size:56K _inchange_semiconductor

2SC2323
2SC2323

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2361 DESCRIPTION · ·With TO-220C package ·Complement to type 2SA1123 ·Low collector saturation voltage APPLICATIONS ·For power amplifier applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIO

5.58. 2sc2358.pdf Size:129K _inchange_semiconductor

2SC2323
2SC2323

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2358 DESCRIPTION · ·With TO-3 package ·High voltage,high speed APPLICATIONS ·Designed for switching-mode power supplies ,CRT scanning,inverters, and other industrial applications PINNING(see fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Abso

5.59. 2sc2351.pdf Size:106K _inchange_semiconductor

2SC2323
2SC2323

INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor 2SC2351 DESCRIPTION ·Low Noise NF = 1.5 dB TYP. ; @ f = 1 GHz ·High Maximum Available Gain MAG = 14 dB TYP. ; @ f = 1 GHz APPLICATIONS ·Designed for use as UHF oscillators and a UHF mixer in a tuner of a TV receiver. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collecto

5.60. 2sc2307.pdf Size:119K _inchange_semiconductor

2SC2323
2SC2323

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2307 DESCRIPTION Ў¤ With TO-3PN package Ў¤ High voltage ,high speed APPLICATIONS Ў¤ For power switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings(Ta=25Ўж ) SYMBOL VCBO VCEO VEB

5.61. 2sc2337.pdf Size:128K _inchange_semiconductor

2SC2323
2SC2323

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2337 DESCRIPTION ·With TO-3 package ·Complement to type 2SA1007 ·Wide area of safe operation APPLICATIONS ·For audio frequency power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta=?

5.62. 2sc2334.pdf Size:158K _inchange_semiconductor

2SC2323
2SC2323

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2334 DESCRIPTION Ў¤ With TO-220 package Ў¤ Complement to type 2SA1010 Ў¤ Low collector saturation voltage Ў¤ Fast switching speed APPLICATIONS Ў¤ Switching regulators Ў¤ DC/DC converters Ў¤ High frequency power amplifiers PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCR

5.63. 2sc2344.pdf Size:167K _inchange_semiconductor

2SC2323
2SC2323

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2344 DESCRIPTION Ў¤ With TO-220 package Ў¤ Complement to type 2SA1011 APPLICATIONS Ў¤ High voltage switching Ў¤ Audio frequency power amplifier; Ў¤ 100W output predriver applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-220) and symbol DES

5.64. 2sc2365.pdf Size:113K _inchange_semiconductor

2SC2323
2SC2323

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2365 DESCRIPTION Ў¤ With TO-3 package Ў¤ High breakdown voltage APPLICATIONS Ў¤ For use in switch-mode CTV supply systems PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=Ўж ) SYMBOL VCBO VCEO VEBO IC ICM PC Tj

5.65. 2sc2336 2sc2336a 2sc2336b.pdf Size:155K _inchange_semiconductor

2SC2323
2SC2323

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2336 2SC2336A 2SC2336B DESCRIPTION Ў¤ With TO-220 package Ў¤ Complement to type 2SA1006, 2SA1006A,2SA1006B APPLICATIONS Ў¤ Audio frequency power amplifier Ў¤ High frequency power amplifier PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-220) and symbol

5.66. 2sc2304.pdf Size:127K _inchange_semiconductor

2SC2323
2SC2323

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2304 DESCRIPTION ·With TO-3 package ·High speed ,high voltage ·Wide area of safe operation APPLICATIONS ·For switching regulator application PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector MAXIMUN RATINGS SYMBOL PARAMETER CONDITION

5.67. 2sc2333.pdf Size:212K _inchange_semiconductor

2SC2323
2SC2323

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2333 Ў¤ DESCRIPTION Ў¤ With TO-220C package Ў¤ High speed switching Ў¤ Low collector saturation voltage APPLICATIONS Ў¤ Switching regulator Ў¤ DC-DC converter Ў¤ Ultrasonic appliance PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings(Ta=

5.68. 2sc2335.pdf Size:167K _inchange_semiconductor

2SC2323
2SC2323

Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION Ў¤ With TO-220C package Ў¤ Collector-emitter sustaining voltage VCEO(sus)=400V(Min) Ў¤ Collector-emitter saturation voltage VCE(sat)=1.0V(Max.)@IC=3.0A,IB=0.6A Ў¤ Switching time-tf=1.0¦М s(Max.)@IC=3.0A APPLICATIONS Ў¤ Designed for use in high-voltage ,highspeed ,power switching in inductive c

5.69. 2sc2331.pdf Size:125K _inchange_semiconductor

2SC2323
2SC2323

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2331 DESCRIPTION Ў¤ With TO-220 package Ў¤ Complement to type 2SA1008 Ў¤ Low collector saturation voltage Ў¤ Fast switching speed APPLICATIONS Ў¤ Switching regulators Ў¤ DC-DC converters Ў¤ High frequency power amplifiers PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCR

5.70. 2sc2305.pdf Size:117K _inchange_semiconductor

2SC2323
2SC2323

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2305 DESCRIPTION Ў¤ With TO-3PN package Ў¤ High breakdown voltage Ў¤ Fast switching speed Ў¤ Wide safe operating area APPLICATIONS Ў¤ For switching regulator applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION

5.71. 2sc2383 to-92l.pdf Size:260K _lge

2SC2323
2SC2323

2SC2383 TO-92L Transistor (NPN) TO-92L 1. EMITTER 2. COLLECTOR 3. BASE 4.700 2 3 5.100 1 Features 7.800 8.200 High voltage: VCEO=160V 0.600 0.800 Large continuous collector current capability Complementary to 2SA1013 0.350 0.550 13.800 14.200 1.270 TYP Dimensions in inches and (millimeters) 2.440 MAXIMUM RATINGS (TA=25? unless otherwise noted) 2.640 0.000

5.72. 2sc2383.pdf Size:290K _lge

2SC2323
2SC2323

2SC2383 TO-92MOD Transistor (NPN) TO-92MOD 1. EMITTER 1 2. COLLECTOR 2 3 3. BASE 5.800 Features 6.200 High voltage: VCEO=160V 8.400 8.800 Large continuous collector current capability 0.900 Complementary to 2SA1013 1.100 0.400 0.600 13.800 14.200 1.500 TYP 2.900 Dimensions in inches and (millimeters) 3.100 MAXIMUM RATINGS (TA=25? unless otherwise not

5.73. 2sc2383t.pdf Size:938K _blue-rocket-elect

2SC2323
2SC2323

2SC2383T(BR3DG1383T) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions SOT-89 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a SOT-89 Plastic Package. 特征 / Features V 高,可与 2SA1013T(BR3CG1013T)互补。 CEO High VCEO, complementary pair with 2SA1013T(BR3CG1013T). 用途 / Applications 用于彩电帧输出,伴音输出。 Color TV class B sound outpu

5.74. 2sc2351.pdf Size:902K _kexin

2SC2323
2SC2323

SMD Type Transistors NPN Transistors 2SC2351 SOT-23 Unit: mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 ■ Features ● Collector Current Capability IC=70mA ● Collector Emitter Voltage VCEO=12V 1 2 +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 25 Collecto

5.75. 2sc2383.pdf Size:1180K _kexin

2SC2323
2SC2323

SMD Type Transistors NPN Transistors 2SC2383 1.70 0.1 ■ Features ● High voltage: VCEO=160V ● Large continuous collector current capability 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 160 Collector - Emitter Voltage VCEO 160 V Emitter - Base Voltage VEBO 6 Collector

Otros transistores... 2SC2317 , 2SC2318 , 2SC2319 , 2SC232 , 2SC2320 , 2SC2320L , 2SC2321 , 2SC2322 , SS8050 , 2SC2324 , 2SC2324K , 2SC2325 , 2SC2326 , 2SC2327 , 2SC2328 , 2SC2328AO , 2SC2328AY .

 
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Recientemente añadidas las descripciónes de los transistores:

BJT: 2SA1897 | KRC664E | KRC663E | SMUN5335DW | MP1526 | 3DD5287 | E3150 | 3DD2499 | 3DD4212DT | 2SC9014 | US6H23 | UMH9NFHA | UMH8NFHA | UMH6NFHA | UMH5NFHA | UMH4NFHA | UMH3NFHA | UMH33N | UMH32N | UMH2NFHA |

 

 

 
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