2SC2330R. Equivalente. Reemplazo. Todos los transistores. Hoja de especificaciones. Principales características

2SC2330R Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SC2330R

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 1 W

Tensión colector-base (Vcb): 300 V

Tensión colector-emisor (Vce): 300 V

Tensión emisor-base (Veb): 7 V

Corriente del colector DC máxima (Ic): 0.1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 50 MHz

Capacitancia de salida (Cc): 4 pF

Ganancia de corriente contínua (hFE): 40

Encapsulados: TO92

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2SC2330R datasheet

8.1. Size:116K nec
2sc2334.pdf pdf_icon

DATA SHEET SILICON POWER TRANSISTOR 2SC2334 NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SC2334 is a mold power transistor developed for high-speed ORDERING INFORMATION switching, and is ideal for use as a driver in devices such as switching Part No. Package regulators, DC/DC converters, and high-frequency power amplifiers. 2SC2334 TO-220AB FEATURES Low c

8.2. Size:118K nec
2sc2335.pdf pdf_icon

DATA SHEET SILICON POWER TRANSISTOR 2SC2335 NPN SILICON TRIPLE DIFFUSED TRANSISTOR FOR HIGH-SPEED HIGH-VOLTAGE SWITCHING The 2SC2335 is a mold power transistor developed for high-speed ORDERING INFORMATION high-voltage switching, and is ideal for use as a driver in devices such Part No. Package as switching regulators, DC/DC converters, and high-frequency power 2SC2335 TO-220AB amplif

8.3. Size:194K nec
2sa1006-a-b 2sc2336-a-b 2sa1006 2sa1006a 2sa1006b 2sc2336 2sc2336a2sc2336b 1.pdf pdf_icon

This Material Copyrighted By Its Respective Manufacturer

8.4. Size:265K nec
2sc2331.pdf pdf_icon

8.5. Size:164K nec
2sc2333.pdf pdf_icon

8.6. Size:131K mospec
2sc2335.pdf pdf_icon

A A A

8.7. Size:99K savantic
2sc2331.pdf pdf_icon

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC2331 DESCRIPTION With TO-220 package Complement to type 2SA1008 Low collector saturation voltage Fast switching speed APPLICATIONS Switching regulators DC-DC converters High frequency power amplifiers PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fi

8.8. Size:158K savantic
2sc2333.pdf pdf_icon

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC2333 DESCRIPTION With TO-220C package High speed switching Low collector saturation voltage APPLICATIONS Switching regulator DC-DC converter Ultrasonic appliance PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=25

8.9. Size:176K jmnic
2sc2334.pdf pdf_icon

Product Specification www.jmnic.com Silicon NPN Power Transistor 2SC2334 DESCRIPTION Low Collector Saturation Voltage Fast Switching Speed Complement to Type 2SA1010 APPLICATIONS Developed for high-voltage high-speed switching, and is ideal for use as a driver in devices such as switching reg- lators, DC/DC converters, and high frequency power am- plifiers. ABSO

8.10. Size:205K jmnic
2sc2335.pdf pdf_icon

JMnic Product Specification Silicon NPN Power Transistors 2SC2335 DESCRIPTION With TO-220C package Collector-emitter sustaining voltage VCEO(sus)=400V(Min) Collector-emitter saturation voltage VCE(sat)=1.0V(Max.)@IC=3.0A,IB=0.6A Switching time-tf=1.0 s(Max.)@IC=3.0A APPLICATIONS Designed for use in high-voltage ,high- speed ,power switching in inductive cir

8.11. Size:45K jmnic
2sc2331.pdf pdf_icon

Product Specification www.jmnic.com Silicon Power Transistors 2SC2331 DESCRIPTION With TO-220 package Complement to type 2SA1008 Low collector saturation voltage Fast switching speed APPLICATIONS Switching regulators DC/DC converters High frequency power amplifiers PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Fig

8.12. Size:248K jmnic
2sc2333.pdf pdf_icon

JMnic Product Specification Silicon NPN Power Transistors 2SC2333 DESCRIPTION With TO-220C package High speed switching Low collector saturation voltage APPLICATIONS Switching regulator DC-DC converter Ultrasonic appliance PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARA

8.13. Size:196K jmnic
2sc2336.pdf pdf_icon

JMnic Product Specification Silicon NPN Power Transistors 2SC2336 2SC2336A 2SC2336B DESCRIPTION With TO-220 package Complement to type 2SA1006, 2SA1006A,2SA1006B APPLICATIONS Audio frequency power amplifier High frequency power amplifier PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol 3 Emi

8.14. Size:176K cn sptech
2sc2334m 2sc2334l 2sc2334k.pdf pdf_icon

SPTECH Product Specification SPTECH Silicon NPN Power Transistor 2SC2334 DESCRIPTION Low Collector Saturation Voltage Fast Switching Speed Complement to Type 2SA1010 APPLICATIONS Developed for high-voltage high-speed switching, and is ideal for use as a driver in devices such as switching reg- lators, DC/DC converters, and high frequency power am- plifiers. ABSOLUTE MAXIMUM R

8.15. Size:189K inchange semiconductor
2sc2337.pdf pdf_icon

isc Silicon NPN Power Transistor 2SC2337 DESCRIPTION High Current Capability Collector-Emitter Breakdown Voltage- V = 130V(Min.) (BR)CEO Complement to Type 2SA1007 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE

8.16. Size:215K inchange semiconductor
2sc2334.pdf pdf_icon

isc Silicon NPN Power Transistor 2SC2334 DESCRIPTION Low Collector Saturation Voltage Fast Switching Speed Complement to Type 2SA1010 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Developed for high-voltage high-speed switching, and is ideal for use as a driver in devices such as switching reg- lators, DC/DC converters, and h

8.17. Size:203K inchange semiconductor
2sc2335.pdf pdf_icon

isc Silicon NPN Power Transistor 2SC2335 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 400V(Min) CEO(SUS) Collector-Emitter Saturation Voltage- V = 1.0V(Max)@ I = 3A, I = 0.6A CE(sat) C B Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in high-voltage, high-speed switching in

8.18. Size:201K inchange semiconductor
2sc2335f.pdf pdf_icon

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC2335F DESCRIPTION With TO-220F package Collector-emitter sustaining voltage VCEO(sus)=400V(Min) Collector-emitter saturation voltage VCE(sat)=1.0V(Max.)@IC=3.0A,IB=0.6A Switching time-tf=1.0 s(Max.)@IC=3.0A APPLICATIONS Designed for use in high-voltage ,high- speed ,power switching

8.19. Size:223K inchange semiconductor
2sc2331.pdf pdf_icon

isc Silicon NPN Power Transistor 2SC2331 DESCRIPTION Low Collector Saturation Voltage- V = 0.6V(Max.)@ I = 1A CE(sat) C Fast Switching Speed Complement to Type 2SA1008 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use as a driver in devices such as switching regulators, DC/DC converters, and high-frequency pow

8.20. Size:155K inchange semiconductor
2sc2336 2sc2336a 2sc2336b.pdf pdf_icon

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2336 2SC2336A 2SC2336B DESCRIPTION With TO-220 package Complement to type 2SA1006, 2SA1006A,2SA1006B APPLICATIONS Audio frequency power amplifier High frequency power amplifier PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220)

8.21. Size:221K inchange semiconductor
2sc2333.pdf pdf_icon

isc Silicon NPN Power Transistor 2SC2333 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 400V(Min) CEO(SUS) High Speed Switching Low Collector Saturation Voltage Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator, DC-DC converter and ultrasonic appliance appli

8.22. Size:198K inchange semiconductor
2sc2336.pdf pdf_icon

isc Silicon NPN Power Transistor 2SC2336 DESCRIPTION Good Linearity of h FE High Collector-Emitter Breakdown Voltage- V = 180V(Min) (BR)CEO Wide Area of Safe Operation Complement to Type 2SA1006 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Adudio frequency power amplifier High frequency power amplifier ABSOLUTE MAX

Otros transistores... 2SC2327 , 2SC2328 , 2SC2328AO , 2SC2328AY , 2SC2329 , 2SC233 , 2SC2330 , 2SC2330O , 2222A , 2SC2330Y , 2SC2331 , 2SC2331O , 2SC2331R , 2SC2331Y , 2SC2333 , 2SC2333O , 2SC2333R .