2SC2429 Todos los transistores

 ..1. Size:139K  fuji
 2sc2429.pdf

 ..2. Size:213K  inchange semiconductor
 2sc2429.pdf

isc Silicon NPN Power Transistor 2SC2429 DESCRIPTION High Collector-Emitter Sustaining Voltage- V = 400V (Min) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for converters and inverters applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER MAX UNIT V Collector-Base Volta

 8.1. Size:126K  toshiba
 2sc2420.pdf

 9.1. Size:135K  toshiba
 2sc2461a.pdf

 9.2. Size:359K  toshiba
 2sc2498.pdf

2SC2498 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC2498 VHF UHF Band Low Noise Amplifier Application Unit mm Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 30 V Collector-emitter voltage VCEO 20 V Emitter-base voltage VEBO 3 V Collector current IC 50 mA Base current IB 25 mA Collector power dissipation PC 300

 9.3. Size:211K  toshiba
 2sc2482.pdf

 9.4. Size:176K  toshiba
 2sc2458.pdf

2SC2458(L) TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2458(L) Audio Amplifier Applications Unit mm Low Noise Audio Amplifier Applications High current capability IC = 150 mA (max) High DC current gain h = 70 700 FE Excellent h linearity h (I = 0.1 mA)/h (I = 2 mA) = 0.95 (typ.) FE FE C FE C Low noise NF (2) = 0.2dB (typ.), 3dB (max)

 9.5. Size:340K  toshiba
 2sc2458l.pdf

2SC2458(L) TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2458(L) Audio Amplifier Applications Unit mm Low Noise Audio Amplifier Applications High current capability IC = 150 mA (max) High DC current gain h = 70 700 FE Excellent h linearity h (I = 0.1 mA)/h (I = 2 mA) = 0.95 (typ.) FE FE C FE C Low noise NF (2) = 0.2dB (typ.), 3dB (max)

 9.6. Size:226K  toshiba
 2sc2459.pdf

2SC2459 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2459 Audio Amplifier Applications Unit mm High breakdown voltage VCEO = 120 V (max) High DC current gain h = 200 700 FE Excellent h linearity h (I = 0.1 mA)/h (I = 2 mA) = 0.95 (typ.) FE FE C FE C Low noise NF = 1dB (typ.), 10dB (max) Complementary to 2SA1049. Small package

 9.7. Size:29K  nec
 2sc2408.pdf

 9.8. Size:140K  rohm
 2sc5659 2sc5659 2sc4618 2sc4098 2sc2413k.pdf

High-frequency Amplifier Transistor (25V, 50mA, 300MHz) 2SC5659 / 2SC4618 / 2SC4098 / 2SC2413K Features Dimensions (Unit mm) 1) Low collector capacitance. (Cob Typ. 1.3pF) 2SC5659 1.2 2) Low rbb, high gain, and excellent noise characteristics. 0.2 0.8 0.2 (2) (3) (1) (1) Base 0.15Max. ROHM VMT3 (2) Emitter Absolute maximum ratings (Ta=25 C) (3) Collector

 9.9. Size:1689K  rohm
 2sc2411k.pdf

2SC2411K Datasheet Medium Power Transistor (32V, 500mA) lOutline l Parameter Value SMT3 VCEO 32V IC 500mA 2SC2411K SOT-346 lFeatures l 1) High ICMAX lInner circuit l ICMAX=0.5A 2)Low VCE(sat) Optimal for low voltage operation. 3)Complements the 2SA1036K. lApplication l DRIVING CIRCUIT, LOW FREQ

 9.10. Size:111K  rohm
 2sc2412k.pdf

General purpose transistor (50V, 0.15A) 2SC2412K / 2SC4081 / 2SC4617 / 2SC5658 Features Dimensions (Unit mm) 1. Low Cob. Cob=2.0pF (Typ.)Cob=2.0pF (Typ.) 2SC2412K 2SC4081 2. Complements the 2SA1037AK / 2SA1576A / 2SA1774H / 2SA2029. 1.25 1.6 2.1 2.8 Structure Epitaxial planar type 0.1Min. 0.3Min. NPN silicon transistor Each lead has same dimensions Each lead

 9.11. Size:171K  rohm
 2sc2412k 2sc4081 2sc4617 2sc5658 2sc1740s.pdf

General purpose transistor (50V, 0.15A) 2SC2412K / 2SC4081 / 2SC4617 / 2SC5658 / 2SC1740S Features Dimensions (Unit mm) 1. Low Cob. Cob=2.0pF (Typ.)Cob=2.0pF (Typ.) 2SC2412K 2SC4081 2SC4617 2. Complements the 2SA1037AK / 2SA1576A / 2SA1774H / 2SA2029 / 2SA933AS. (1) (2) (3) 1.25 1.6 0.8 2.1 2.8 1.6 Structure Epitaxial planar type 0.1Min. 0.1Min. 0.3Min. NPN

 9.12. Size:931K  rohm
 2sc2411kfra.pdf

2SC2411KFRA 2SC2411K Transistors AEC-Q101 Qualified Medium Power Transistor (32V, 0.5A) 2SC2411K 2SC2411KFRA Features External dimensions (Units mm) 1) High ICMax. 2SC2411KFRA 2SC2411K ICMax. = 0.5A 2) Low VCE(sat). 2.9 0.2 Optimal for low voltage operation. 1.1+0.2 1.9 0.2 -0.1 0.8 0.1 0.95 0.95 2SA1036KFRA 3) Complements the 2SA1036K. (1) (2) 0 0.1 (3)

 9.13. Size:2718K  rohm
 2sc5658 2sc4617eb 2sc4617 2sc4081ub 2sc4081u3 2sc2412k.pdf

2SC5658 / 2SC4617EB / 2SC4617 2SC4081UB / 2SC4081U3 / 2SC2412K Datasheet General purpose small signal amplifier (50V, 150mA) lOutline l Parameter Value SC-105AA SOT-416FL VCEO 50V IC 150mA 2SC5658 2SC4617EB (VMT3) (EMT3F) lFeatures SOT-416 SOT-323FL l 1)Low Cob.Cob=2.0pF(Typ.) 2)Complements the 2SA2029/ 2SC4617 2SC4081UB 2SA1774EB/2SA

 9.14. Size:2688K  rohm
 2sc5658 2sc4617eb 2sc4617 2sc4081ub 2sc4081 2sc2412k.pdf

2SC5658 / 2SC4617EB / 2SC4617 2SC4081UB / 2SC4081 / 2SC2412K Datasheet General purpose small signal amplifier (50V, 150mA) lOutline l Parameter Value SC-105AA SOT-416FL VCEO 50V IC 150mA 2SC5658 2SC4617EB (VMT3) (EMT3F) lFeatures SOT-416 SOT-323FL l 1)Low Cob.Cob=2.0pF(Typ.) 2)Complements the 2SA2029/ 2SC4617 2SC4081UB 2SA1774EB/2SA17

 9.15. Size:1268K  rohm
 2sc2412kfra.pdf

2SC2412K FRA Datasheet General purpose small signal amplifier(50V, 150mA) AEC-Q101 Qualified lOutline l SOT-346 Parameter Value SC-59 VCEO 50V IC 150mA SMT3 lFeatures lInner circuit l l 1)Low Cob.Cob=2.0pF(Typ.) 2)Complements the 2SA1037AK FRA. lApplication l GENERAL PURPOSE SMALL SIGNAL AMPLIFIER

 9.16. Size:225K  mcc
 2sc2411-r.pdf

MCC 2SC2411-P Micro Commercial Components TM 20736 Marilla Street Chatsworth Micro Commercial Components 2SC2411-Q CA 91311 Phone (818) 701-4933 2SC2411-R Fax (818) 701-4939 Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) NPN Silicon High IC. ICMax.= 0.5 A Low VCE(sat).Optimal for low voltage operation.

 9.17. Size:225K  mcc
 2sc2411-p.pdf

MCC 2SC2411-P Micro Commercial Components TM 20736 Marilla Street Chatsworth Micro Commercial Components 2SC2411-Q CA 91311 Phone (818) 701-4933 2SC2411-R Fax (818) 701-4939 Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) NPN Silicon High IC. ICMax.= 0.5 A Low VCE(sat).Optimal for low voltage operation.

 9.18. Size:417K  mcc
 2sc2458-y.pdf

MCC Micro Commercial Components TM 2SC2458-Y 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 Phone (818) 701-4933 Fax (818) 701-4939 Features Lead Free Finish/Rohs Compliant ("P"Suffix designates NPN Compliant. See ordering information) Epoxy meets UL 94 V-0 flammability rating Plastic-Encapsulate Moisture Sensitivity Level 1 Power diss

 9.19. Size:580K  mcc
 2sc2458-gr.pdf

 9.20. Size:395K  mcc
 2sc2482-y.pdf

MCC Micro Commercial Components TM 2SC2482 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2SC2482-O Phone (818) 701-4933 Fax (818) 701-4939 2SC2482-Y Features High Voltage Vceo=300V Small collector output capacitance Cob=3.0pF(Typ) NPN Epoxy meets UL 94 V-0 flammability rating Epitaxial Silicon Moisture Sensitivity Level 1 Lead Free

 9.21. Size:225K  mcc
 2sc2411-q.pdf

MCC 2SC2411-P Micro Commercial Components TM 20736 Marilla Street Chatsworth Micro Commercial Components 2SC2411-Q CA 91311 Phone (818) 701-4933 2SC2411-R Fax (818) 701-4939 Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) NPN Silicon High IC. ICMax.= 0.5 A Low VCE(sat).Optimal for low voltage operation.

 9.22. Size:395K  mcc
 2sc2482-o.pdf

MCC Micro Commercial Components TM 2SC2482 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2SC2482-O Phone (818) 701-4933 Fax (818) 701-4939 2SC2482-Y Features High Voltage Vceo=300V Small collector output capacitance Cob=3.0pF(Typ) NPN Epoxy meets UL 94 V-0 flammability rating Epitaxial Silicon Moisture Sensitivity Level 1 Lead Free

 9.23. Size:102K  panasonic
 2sc2488.pdf

 9.24. Size:103K  panasonic
 2sc2489.pdf

 9.25. Size:50K  panasonic
 2sc2405 2sc2406.pdf

Transistor 2SC2405, 2SC2406 Silicon NPN epitaxial planer type For low-frequency and low-noise amplification Unit mm Complementary to 2SA1034 and 2SA1035 Features +0.2 2.8 0.3 Low noise voltage NV. +0.25 0.65 0.15 1.5 0.05 0.65 0.15 High foward current transfer ratio hFE. Mini type package, allowing downsizing of the equipment and automatic insertion through the tape

 9.26. Size:70K  panasonic
 2sc2497.pdf

Power Transistors 2SC2497, 2SC2497A Silicon NPN epitaxial planar type Unit mm For low-frequency power amplification 8.0+0.5 0.1 3.2 0.2 Complementary to 2SA1096 and 2SA1096A 3.16 0.1 Features High collector to emitter voltage VCEO TO-126B package which requires no insulation plate for installa- tion to the heat sink Absolute Maximum Ratings TC = 25 C Parameter

 9.27. Size:58K  panasonic
 2sc2480 e.pdf

Transistor 2SC2480 Silicon NPN epitaxial planer type For high-frequency amplification/oscillation/mixing Unit mm +0.2 2.8 0.3 +0.25 Features 0.65 0.15 1.5 0.05 0.65 0.15 High transition frequency fT. Mini type package, allowing downsizing of the equipment and 1 automatic insertion through the tape packing and the magazine packing. 3 2 Absolute Maximum Ratings (Ta=25

 9.28. Size:74K  panasonic
 2sc2480.pdf

Transistors 2SC2480 Silicon NPN epitaxial planer type Unit mm 0.40+0.10 For high-frequency amplification / oscillation / mixing 0.05 0.16+0.10 0.06 3 Features 1 2 High transition frequency fT (0.95) (0.95) Mini type package, allowing downsizing of the equipment and 1.9 0.1 automatic insertion through the tape packing and the magazine 2.90+0.20 0.05 packing.

 9.29. Size:54K  panasonic
 2sc2405 e.pdf

Transistor 2SC2405, 2SC2406 Silicon NPN epitaxial planer type For low-frequency and low-noise amplification Unit mm Complementary to 2SA1034 and 2SA1035 Features +0.2 2.8 0.3 Low noise voltage NV. +0.25 0.65 0.15 1.5 0.05 0.65 0.15 High foward current transfer ratio hFE. Mini type package, allowing downsizing of the equipment and automatic insertion through the tape

 9.30. Size:89K  panasonic
 2sa1062 2sc2486.pdf

 9.31. Size:60K  panasonic
 2sc2404 e.pdf

Transistor 2SC2404 Silicon NPN epitaxial planer type For high-frequency amplification Unit mm +0.2 2.8 0.3 +0.25 Features 0.65 0.15 1.5 0.05 0.65 0.15 Optimum for RF amplification of FM/AM radios. High transition frequency fT. 1 Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine 3 packing. 2 Abs

 9.32. Size:102K  panasonic
 2sa1061 2sc2485.pdf

 9.33. Size:56K  panasonic
 2sc2404.pdf

Transistor 2SC2404 Silicon NPN epitaxial planer type For high-frequency amplification Unit mm +0.2 2.8 0.3 +0.25 Features 0.65 0.15 1.5 0.05 0.65 0.15 Optimum for RF amplification of FM/AM radios. High transition frequency fT. 1 Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine 3 packing. 2 Abs

 9.34. Size:104K  fuji
 2sc2440.pdf

Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com

 9.35. Size:24K  hitachi
 2sc2463.pdf

2SC2463 Silicon NPN Epitaxial Application Low frequency amplifier Outline MPAK 3 1 1. Emitter 2. Base 2 3. Collector 2SC2463 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 55 V Collector to emitter voltage VCEO 50 V Emitter to base voltage VEBO 5V Collector current IC 100 mA Collector power dissipation PC 150 mW Junction temper

 9.36. Size:30K  hitachi
 2sc2471.pdf

2SC2471 Silicon NPN Epitaxial Application UHF Amplifier UHF TV Tuner, Local oscillator Outline TO-92 (2) 1. Base 2. Emitter 3. Collector 3 2 1 2SC2471 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 30 V Collector to emitter voltage VCEO 30 V Emitter to base voltage VEBO 3V Collector current IC 50 mA Collector power diss

 9.37. Size:36K  hitachi
 2sc2468 2sc2469.pdf

 9.38. Size:24K  hitachi
 2sc2462.pdf

2SC2462 Silicon NPN Epitaxial Application Low frequency amplifier Outline MPAK 3 1 1. Emitter 2. Base 2 3. Collector 2SC2462 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 50 V Collector to emitter voltage VCEO 40 V Emitter to base voltage VEBO 5V Collector current IC 100 mA Emitter current IE 100 mA Collector power dissipat

 9.39. Size:34K  no
 2sc2464.pdf

 9.40. Size:34K  no
 2sc2472.pdf

 9.41. Size:36K  no
 2sc2466.pdf

 9.42. Size:456K  secos
 2sc2412.pdf

2SC2412 0.15A , 60V NPN Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-23 FEATURE Low Cob, Cob=2.0pF A L Complements of the 2SA1037 3 3 Top View C B CLASSIFICATION OF hFE 1 1 2 2 K E Product-Rank 2SC2412-Q 2SC2412-R 2SC2412-S Range 120 270 180 390 270 560 D Marking Code BQ B

 9.43. Size:225K  secos
 2sc2411.pdf

2SC2411 NPN Transistor Elektronische Bauelemente Plastic-Encapsulate Transistors A suffix of "-C" specifies halogen & lead-free SOT-23 Dim Min Max Collector 3 A 2.800 3.040 FEATURES 1 B 1.200 1.400 Base 2 C 0.890 1.110 n Emitter Power Dissipation o D 0.370 0.500 PCM 200 mW ( Tamb= 25 C) G 1.780 2.040 A n RoHS Compliant Product H 0.013 0.100 L J J 0.085 0.

 9.44. Size:850K  jiangsu
 2sc2412.pdf

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 2SC2412 TRANSISTOR (NPN) FEATURES 1. BASE Low Cob ,Cob = 2.0 pF (Typ). 2. EMITTER 3. COLLECTOR MARKING BQ, BR, BS MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEB

 9.45. Size:4580K  jiangsu
 2sc2482.pdf

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate Transistors J C T TO-92L 2SC2482 TRANSISTOR (NPN) 1. EMITTER FEATURE High Voltage VCEO=300V 2. COLLECTOR Small Collector Output Capacitance Cob=3.0pF(Typ) 3. BASE MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 300 V VCEO Co

 9.46. Size:608K  jiangsu
 2sc2411.pdf

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 2SC2411 TRANSISTOR(NPN) 1. BASE FEATURES 2. EMITTER 3. COLLECTOR High ICMax.ICMax. = 0.5mA Low VCE(sat).Optimal for low voltage operation. Complements the 2SA1036 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 40 V VCE

 9.47. Size:506K  jiangsu
 2sc2458.pdf

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92S Plastic-Encapsulate Transistors TO 92S 2SC2458 TRANSISTOR (NPN) 1. EMITTER FEATURES 2. COLLECTOR High Current Capability 3. BASE High DC Current Gain 1 2 3 Excellent hFE Linearity Complementary to 2SA1048 Equivalent Circuit C2458 C2458=Device code Solid dot = Green molding compound device,

 9.48. Size:850K  jiangsu
 ad-2sc2412.pdf

www.jscj-elec.com AD-2SC2412 series JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD. AD-2SC2412 series Plastic-Encapsulated Transistor AD-2SC2412 series Transistor (NPN) FEATURES Low Cob ,Cob = 2.0 pF (Typ) AEC-Q101 qualified CLASSIFICATION of hFE Rank AD-2SC2412-Q AD-2SC2412-R AD-2SC2412-S Range 120-270 180-390 270-560 BQ BR BS Marking Version 1.0 1 /

 9.49. Size:219K  jmnic
 2sc2440.pdf

JMnic Product Specification Silicon NPN Power Transistors 2SC2440 DESCRIPTION With TO-220C package High voltage ,high speed switching High reliability APPLICATIONS Switching regulators Ultrasonic generators High frequency inverters General purpose power amplifiers PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Ab

 9.50. Size:124K  jmnic
 2sc2485.pdf

Product Specification www.jmnic.com Silicon Power Transistors 2SC2485 DESCRIPTION With TO-3PN package Complement to type 2SA1061 High collector power dissipation APPLICATIONS High power audio frequency amplifier PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol LIMITING VALUES SYMB

 9.51. Size:220K  jmnic
 2sc2438.pdf

JMnic Product Specification Silicon NPN Power Transistors 2SC2438 DESCRIPTION With TO-220C package Low collector saturation voltage High reliability APPLICATIONS Switching regulators Ultrasonic generators High frequency inverters General purpose power amplifiers PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Abso

 9.52. Size:958K  htsemi
 2sc2412.pdf

2SC2412 TRANSISTOR (NPN) SOT-23 FEATURES 1. BASE Low Cob ,Cob = 2.0 pF (Typ). 2. EMITTER 3. COLLECTOR MARKING BQ, BR, BS MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 7 V IC Collector Current -Continuous 150 mA PC Collector Power Dissi

 9.53. Size:643K  htsemi
 2sc2411.pdf

2SC2411 SOT-23 TRANSISOR(NPN) 1. BASE 2. EMITTER FEATURES High ICMax.ICMax. = 0.5mA 3. COLLECTOR Low VCE(sat).Optimal for low voltage operation. Complements the 2SA1036 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 32 V VEBO Emitter-Base Voltage 5 V Collector Current

 9.54. Size:204K  lge
 2sc2411 sot-23.pdf

2SC2411 SOT-23 Transistor(NPN) 1. BASE SOT-23 2. EMITTER 3. COLLECTOR Features High ICMax.ICMax. = 0.5mA Low VCE(sat).Optimal for low voltage operation. Complements the 2SA1036 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V Dimensions in inches and (millimeters) VCEO Collector-Emitter Voltage 32

 9.55. Size:234K  lge
 2sc2412 sot-23.pdf

2SC2412 SOT-23 Transistor(NPN) SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features Low Cob ,Cob = 2.0 pF (Typ). MARKING BQ, BR, BS MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V Dimensions in inches and (millimeters) VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 7 V IC Collector Current -C

 9.56. Size:258K  lge
 2sc2482.pdf

2SC2482 TO-92MOD Transistor (NPN) TO-92MOD 1. EMITTER 1 2 2. COLLECTOR 3 3. BASE Features 5.800 High voltage Vceo=300V 6.200 Small collector output capacitance Cob=3.0pF(Typ) 8.400 8.800 0.900 1.100 0.400 0.600 MAXIMUM RATINGS (TA=25 unless otherwise noted) 13.800 14.200 Symbol Parameter Value Units VCBO Collector-Base Voltage 300 V 1.500 TYP VCE

 9.57. Size:249K  lge
 2sc2482 to-92l.pdf

2SC2482 TO-92L Transistor (NPN) TO-92L 1. EMITTER 2. COLLECTOR 3. BASE 2 3 1 4.700 Features 5.100 High voltage Vceo=300V 7.800 Small collector output capacitance Cob=3.0pF(Typ) 8.200 0.600 0.800 MAXIMUM RATINGS (TA=25 unless otherwise noted) 0.350 0.550 13.800 Symbol Parameter Value Units 14.200 VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter

 9.58. Size:247K  lge
 2sc2412k sot-23-3l.pdf

2SC2412K SOT-23-3L Transistor(NPN) 1. BASE SOT-23-3L 2. EMITTER 2.92 3. COLLECTOR 0.35 1.17 Features Low Cob ,Cob = 2.0 pF (Typ). 2.80 1.60 Complements the 2SA1037AK MARKING BQ, BR, BS 0.15 1.90 MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters) Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-E

 9.59. Size:1663K  wietron
 2sc2411k.pdf

2SC2411K NPN General Purpose Transistors 3 1 P b Lead(Pb)-Free 2 SOT-23 MAXIMUM RATINGS(Ta=25 C) Rating Symbol Value Unit Collector-Emitter Voltage VCEO 32 V VCBO Collector-Base Voltage 40 V VEBO Emitter-Base Voltage 5.0 V IC Collector Current - Continuous 500 mA Total Device Dissipation PD 200 mW TA=25 C Tj C Junction Temperature +150 Tstg Storage Temperature -55 t

 9.60. Size:1292K  wietron
 2sc2412k.pdf

2SC2412K NPN 3 1 2 SOT-23 Value V 50 CEO 60 7.0 150 200 1.6 625 T ,Tstg J 1.0 50 50 60 7.0 50 u 0.1 I O Vdc, E= E= 50 0 ) u 0.1 60 0.1 u 7.0 WEITRON 1/5 24-Jul-07 http //www.weitron.com.tw 2SC2412K ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Min Typ Max Unit ON CHARACTERISTICS DC Current Gain hF

 9.61. Size:339K  willas
 2sc2412kxlt1.pdf

FM120-M WILLAS 2SC2412KxLT1 THRU General Purpose Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Product NPN Silicon Package outline We declare that the material of product compliance with RoHS requirements. Features Batch process design, excellent power dissipation offers better reverse leakage current and ther

 9.62. Size:295K  willas
 2sc2411kxlt1.pdf

FM120-M WILLAS 2SC2411KxLT1 THRU Medium Power Transistor FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Product Package outline Features Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H Low profile surface mounted application in order to NPN silicon

 9.63. Size:1065K  blue-rocket-elect
 2sc2412k.pdf

2SC2412K Rev.FApr.-2017 DATA SHEET / Descriptions SOT-23 NPN Silicon NPN transistor in a SOT-23 Plastic Package. / Features Low Cob. / Applications General amplifier. / Equivalent Circuit / Pinning 3 1 2 PIN1 Base PIN

 9.64. Size:147K  lrc
 l2sc2412kqmt1g.pdf

LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon We declare that the material of product compliance with RoHS requirements. L2SC2412KQMT1G S- Prefix for Automotive and Other Applications Requiring Unique Site Series and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. S-L2SC2412KQMT1G ORDERING INFORMATION Series Device Marking Shipping L2SC2

 9.65. Size:127K  lrc
 l2sc2412kqlt1g.pdf

LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon L2SC2412KQLT1G We declare that the material of product compliance with RoHS requirements. Series S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. S-L2SC2412KQLT1G ORDERING INFORMATION Series Device Marking Shipping L2SC2

 9.66. Size:127K  lrc
 l2sc2412krlt1g.pdf

LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon L2SC2412KQLT1G We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site Series and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. L2SC2412KQLT1G ORDERING INFORMATION Series Device Marking Shipping L2SC2412

 9.67. Size:127K  lrc
 l2sc2412kqlt1g l2sc2412kqlt3g l2sc2412krlt1g l2sc2412krlt3g l2sc2412kslt1g l2sc2412kslt3g.pdf

LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon L2SC2412KQLT1G We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site Series and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. L2SC2412KQLT1G ORDERING INFORMATION Series Device Marking Shipping L2SC2412

 9.68. Size:173K  lrc
 l2sc2411kqlt1g.pdf

LESHAN RADIO COMPANY, LTD. Medium Power Transistor L2SC2411KQLT1G NPN silicon Series FEATURE S-L2SC2411KQLT1G Epitaxial planar type Series Complementary to L2SA1036K We declare that the material of product are Halogen Free and 3 compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements,AEC-q101

 9.69. Size:138K  lrc
 l2sc2412ksmt1g.pdf

LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon L2SC2412KQMT1G We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site Series and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. S-L2SC2412KQMT1G ORDERING INFORMATION Series Device Marking Shipping L2SC

 9.70. Size:127K  lrc
 l2sc2412kslt1g.pdf

LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon L2SC2412KQLT1G We declare that the material of product compliance with RoHS requirements. Series S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. S-L2SC2412KQLT1G ORDERING INFORMATION Series Device Marking Shipping L2SC2

 9.71. Size:127K  lrc
 l2sc2412kqlt1g l2sc2412krlt1g l2sc2412kslt1g.pdf

LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon L2SC2412KQLT1G We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site Series and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. L2SC2412KQLT1G ORDERING INFORMATION Series Device Marking Shipping L2SC2412

 9.72. Size:613K  lrc
 l2sc2411krlt1g.pdf

LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon L2SC2411KRLT1G FEATURES S-L2SC2411KRLT1G 1) We declare that the material of product compliant with RoHS requirements and Halogen Free. 3 2) S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. 1 2 SOT 23 DEVICE MARK

 9.73. Size:141K  lrc
 l2sc2412krmt1g.pdf

LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon We declare that the material of product compliance with RoHS requirements. L2SC2412KQMT1G S- Prefix for Automotive and Other Applications Requiring Unique Site Series and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. S-L2SC2412KQMT1G ORDERING INFORMATION Series Device Marking Shipping L2SC2

 9.74. Size:538K  lrc
 l2sc2411krlt1g l2sc2411krlt3g.pdf

L2SC2411KRLT1G S-L2SC2411KRLT1G General Purpose Transistors NPN Silicon 1. FEATURES We declare that the material of product compliance with RoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 SOT23 qualified and PPAP capable. 2. DEVICE MARKING AND ORDERING INFORMATION Device Mark

 9.75. Size:1088K  kexin
 2sc2412.pdf

SMD Type or SMD Type TransistICs NPN Transistors 2SC2412 (2SC2412K) SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features Low Cob.Cob=2.0pF (Typ.) 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 60 V Collector-emitter voltage VCEO 50 V Emitter-base v

 9.76. Size:46K  kexin
 2sc2412-r.pdf

SMD Type IC SMD Type Transistors General Purpose Transistor 2SC2412 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4-0.1 3 Features Low Cob.Cob=2.0pF (Typ.) 12 +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 60 V Collector-emitter voltage VCEO 50 V Emitter-base voltage

 9.77. Size:324K  kexin
 2sc2463.pdf

SMD Type Transistors NPN Transistors 2SC2463 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 Features Collector Current Capability IC=100mA Collector Emitter Voltage VCEO=50V 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 55 Colle

 9.78. Size:1155K  kexin
 2sc2406.pdf

SMD Type Transistors NPN Transistors 2SC2406 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 Features Collector Current Capability IC=50mA Collector Emitter Voltage VCEO=55V 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 Complementary to 2SA1035 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector

 9.79. Size:337K  kexin
 2sc2411.pdf

SMD Type Transistors NPN Transistors 2SC2411 (2SC2411K) SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=0.5A 1 2 Low VCE(sat).Optimal for low voltage operation. +0.05 0.95+0.1 -0.1 0.1 -0.01 1.9+0.1 -0.1 Complements the 2SA1036/2SA1036K 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter

 9.80. Size:758K  kexin
 2sc2405.pdf

SMD Type Transistors NPN Transistors 2SC2405 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 Features Collector Current Capability IC=50mA Collector Emitter Voltage VCEO=35V 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 Complementary to 2SA1034 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector

 9.81. Size:46K  kexin
 2sc2412-s.pdf

SMD Type IC SMD Type Transistors General Purpose Transistor 2SC2412 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4-0.1 3 Features Low Cob.Cob=2.0pF (Typ.) 12 +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 60 V Collector-emitter voltage VCEO 50 V Emitter-base voltage

 9.82. Size:1168K  kexin
 2sc2480.pdf

SMD Type Transistors NPN Transistors 2SC2480 SOT-23 Unit mm +0.1 2.9 -0.1 0.4+0.1 -0.1 3 Features Collector Current Capability IC=50mA 1 2 Collector Emitter Voltage VCEO=20V +0.1 +0.05 0.95 -0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collect

 9.83. Size:46K  kexin
 2sc2412-q.pdf

SMD Type IC SMD Type Transistors General Purpose Transistor 2SC2412 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4-0.1 3 Features Low Cob.Cob=2.0pF (Typ.) 12 +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 60 V Collector-emitter voltage VCEO 50 V Emitter-base voltage

 9.84. Size:326K  kexin
 2sc2462.pdf

SMD Type Transistors NPN Transistors 2SC2462 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=100mA Collector Emitter Voltage VCEO=40V 1 2 +0.1 0.95-0.1 0.1+0.05 -0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 50 Collect

 9.85. Size:1134K  kexin
 2sc2404.pdf

SMD Type Transistors NPN Transistors 2SC2404 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 Features Collector Current Capability IC=15mA Collector Emitter Voltage VCEO=20V 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Colle

 9.86. Size:335K  panjit
 2sc2411k.pdf

2SC2411K NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE 32 Volts POWER 225mW FEATURES 0.120(3.04) NPN epitaxial silicon,planar design 0.110(2.80) Collector-emitter voltage VCE=32V Collector current IC=500mA Lead free in comply with EU RoHS 2011/65/EU directives. Green molding compound as per IEC61249 Std. . (Halogen Free) 0.056(1.40) 0.047(1.20) MECHANICAL DAT

 9.87. Size:92K  chenmko
 2sc2411kgp.pdf

CHENMKO ENTERPRISE CO.,LTD 2SC2411KGP SURFACE MOUNT Medium Power NPN Transistor VOLTAGE 32 Volts CURRENT 0.5 Ampere APPLICATION * Medium Power Amplifier . FEATURE * Surface mount package. (SOT-23) SOT-23 * Low saturation voltage V * Low cob. Cob=6.0pF(Typ.) CE(sat)=0.4V(max.)(IC=500mA) * PC= 200mW (mounted on ceramic substrate). * High saturation current capability. (1) CONST

 9.88. Size:100K  chenmko
 2sc2412kgp.pdf

CHENMKO ENTERPRISE CO.,LTD 2SC2412KGP SURFACE MOUNT General Purpose Transistor VOLTAGE 50 Volts CURRENT 0.15 Ampere APPLICATION * Small Signal Amplifier . FEATURE * Surface mount package. (SOT-23) SOT-23 * Low saturation voltage V CE(sat)=-0.4V(max.)(IC=50mA) * Low cob. Cob=2.0pF(Typ.) * PC= 200mW (mounted on ceramic substrate). * High saturation current capability. (1) CONST

 9.89. Size:104K  chenmko
 2sc2412wgp.pdf

CHENMKO ENTERPRISE CO.,LTD 2SC2412WGP SURFACE MOUNT General Purpose Transistor VOLTAGE 50 Volts CURRENT 0.15 Ampere APPLICATION * Small Signal Amplifier . FEATURE * Surface mount package. (SC-70/SOT-323) SC-70/SOT-323 * Low saturation voltage V CE(sat)=-0.4V(max.)(IC=50mA) * Low cob. Cob=2.0pF(Typ.) * PC= 150mW (mounted on ceramic substrate). * High saturation current capabilit

 9.90. Size:325K  galaxy
 2sc2412.pdf

Product specification Silicon Epitaxial Planar Transistor 2SC2412 FEATURES Low C .C =2.0pF ob ob Pb Complementary to 2SA1037 Lead-free APPLICATIONS NPN Silicon Epitaxial Planar Transistor SOT-23 ORDERING INFORMATION Type No. Marking Package Code 2SC2412 BQ/BR/BS SOT-23 none is for Lead Free package; G is for Halogen Free package. MAXI

 9.91. Size:238K  slkor
 2sc2412k-q 2sc2412k-r 2sc2412k-s.pdf

2SC2412K NPN Transistors 3 2 Features 1.Base Low Cob.Cob=2.0pF (Typ.) 2.Emitter 1 3.Collector Simplified outline(SOT-23) Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 60 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 7 V Collector current IC 0.15 A Collector power dissipation PC 0.2 W Junction temperature Tj 150

 9.92. Size:1660K  cn yongyutai
 2sc2412q 2sc2412r 2sc2412s.pdf

2SC2412 TRANSISTOR (NPN) MARKING Equivalent Circuit SOT-23 1.BASE 2.EMITTER 3.COLLECTOR FEATURES LOW Cob, Cob=2.0 PF(TYP) MAXIMUM RATINGS (Ta=25 unless otherwise noted) Parameter Symbol Value Unit Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 50 V Emitter-Base Voltage VEBO 7 V Collector Current -Continuous IC 150 mA Collector Current -Puised ICM 200

 9.93. Size:307K  cn fosan
 2sc2412.pdf

ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO., LTD FEATURES NPN General Purpose Transistor MAXIMUM RATINGS (T =25 ) a Characteristic Symbol Rating Unit Collector-Base Voltage V 60 V CBO - Collector-Emitter Voltage V 50 V CEO - Emitte

 9.94. Size:558K  cn hottech
 2sc2412.pdf

Plastic-Encapsulate Transistors FEATURES (NPN) 2SC2412 Low Cob ,Cob = 2.0 pF (Typ). MARKING BQ, BR, BS MAXIMUM RATINGS (Ta=25 unless otherwise noted) 1. BASE Symbol Parameter Value Unit 2. EMITTER SOT-23 VCBO Collector-Base Voltage 60 V 3. COLLECTO VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 7 V IC Collector Current -Continuous 150 mA PC Collector P

 9.95. Size:178K  inchange semiconductor
 2sc2461a.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2461A DESCRIPTION With TO-3 Package Complementary to 2SA1051A Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Recommended for 10W high-fidelity audio frequency amplifier output stage ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Vol

 9.96. Size:194K  inchange semiconductor
 2sc2440.pdf

isc Silicon NPN Power Transistor 2SC2440 DESCRIPTION High Collector-Emitter Sustaining Voltage- V = 400(V)(Min.) CEO(SUS) High Switching Speed High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators Ultrasonic generators High frequency inverters General purpose power amplifiers ABSOLUTE

 9.97. Size:202K  inchange semiconductor
 2sc2486.pdf

isc Silicon NPN Power Transistor 2SC2486 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 120V(Min) (BR)CEO High Power Dissipation Complement to Type 2SA1062 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power audio frequency amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAME

 9.98. Size:195K  inchange semiconductor
 2sc2488.pdf

isc Silicon NPN Power Transistor 2SC2488 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 150V(Min.) (BR)CEO Good Linearity of h FE Wide Area of Safe Operation Complement to Type 2SA1064 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for AF amplifier, high power amplifier applications. ABSOLUTE MAXIMUM RATI

 9.99. Size:195K  inchange semiconductor
 2sc2489.pdf

isc Silicon NPN Power Transistor 2SC2489 DESCRIPTION Good Linearity of h FE Collector-Emitter Sustaining Voltage- V = 150V (Min) CEO(SUS) Wide Area of Safe Operation Complement to Type 2SA1065 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for AF amplifier,high power amplifier applications. ABSOLUTE MAXIMUM RA

 9.100. Size:202K  inchange semiconductor
 2sc2485.pdf

isc Silicon NPN Power Transistor 2SC2485 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 100V(Min) (BR)CEO High Power Dissipation Complement to Type 2SA1061 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power audio frequency amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAME

 9.101. Size:175K  inchange semiconductor
 2sc2482.pdf

INCHANGE Semiconductor isc Silicon NPN Pow Transistor 2SC2482 DESCRIPTION High breakdown voltage Low output capacitance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Color TV chroma output applications Color TV horiz. driver applications High voltage switching and amplifier applications ABSOLUTE MA

 9.102. Size:176K  inchange semiconductor
 2sc245.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC245 DESCRIPTION With TO-3 Package Low collector saturation voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Designed for color TV horizontal deflection driver ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 120 V CBO V

 9.103. Size:189K  inchange semiconductor
 2sc2414.pdf

isc Silicon NPN Power Transistor 2SC2414 DESCRIPTION High Switching Speed Collector-Emitter Sustaining Voltage- V = 400V (Min) CEO(SUS) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high speed power switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER MAX UNIT V Collector-Base Voltage

 9.104. Size:196K  inchange semiconductor
 2sc2438.pdf

isc Silicon NPN Power Transistor 2SC2438 DESCRIPTION Low Collector Saturation Voltage- V = 0.5(V)(Max)@ I = 4A CE(sat) C High Switching Speed High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators Ultrasonic generators High frequency inverters General purpose power amplifiers ABSOLUTE M

 9.105. Size:188K  inchange semiconductor
 2sc2437.pdf

isc Silicon NPN Power Transistor 2SC2437 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 400V (Min) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators DC-DC convertor Solid state relay General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PA

 9.106. Size:213K  inchange semiconductor
 2sc2433.pdf

isc Silicon NPN Power Transistor 2SC2433 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 120V(Min) (BR)CEO High Current Capability Wide Area of Safe Operation Complement to Type 2SA1043 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power switching applications High frequency power amplifier Switching regula

 9.107. Size:209K  inchange semiconductor
 2sc2416.pdf

isc Silicon NPN Power Transistor 2SC2416 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 400V (Min) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high speed power switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER MAX UNIT V Collector-Base Voltage

 9.108. Size:202K  inchange semiconductor
 2sc2484.pdf

isc Silicon NPN Power Transistor 2SC2484 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 80V(Min) (BR)CEO High Power Dissipation Complement to Type 2SA1060 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power audio frequency amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMET

 9.109. Size:123K  inchange semiconductor
 2sc2497 2sc2497a.pdf

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2497 2SC2497A DESCRIPTION With TO-126 package Complement to type 2SA1096/A High collector to emitter voltage VCEO APPLICATIONS For low-frequency power amplification PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings(Ta=25 )

 9.110. Size:190K  inchange semiconductor
 2sc2415.pdf

isc Silicon NPN Power Transistor 2SC2415 DESCRIPTION High Switching Speed Collector-Emitter Sustaining Voltage- V = 400V (Min) CEO(SUS) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high speed power switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER MAX UNIT V Collector-Base Voltage

 9.111. Size:211K  inchange semiconductor
 2sc2481.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2481 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 150V(Min) (BR)CEO High Current Capability High Collector Power Dissipation Complement to Type 2SA1021 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Color TV vertical deflection output applications. Col

 9.112. Size:176K  inchange semiconductor
 2sc2408.pdf

INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC2408 DESCRIPTION Low Noise NF = 2.4 dB TYP. ;@ f = 200 MHz High Gain S 2 = 21 dB TYP. ;@ f = 200 MHz 21e Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Designed for use in high frequency wide band amplifier. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER V

 9.113. Size:203K  inchange semiconductor
 2sc2461.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2461 DESCRIPTION With TO-3 Package Complementary to 2SA1051 Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Recommended for 10W high-fidelity audio frequency amplifier output stage ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Volta

 9.114. Size:194K  inchange semiconductor
 2sc2460.pdf

isc Silicon NPN Power Transistor 2SC2460 DESCRIPTION High Current Capability Collector-Emitter Breakdown Voltage- V = 140V(Min.) (BR)CEO Complement to Type 2SA1050 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifer and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAM