2SC2435 Todos los transistores

 

2SC2435 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SC2435
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 100 W
   Tensión colector-base (Vcb): 100 V
   Tensión colector-emisor (Vce): 100 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 10 A
   Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 10000
   Paquete / Cubierta: TO3
     - Selección de transistores por parámetros

 

2SC2435 Datasheet (PDF)

 8.1. Size:220K  jmnic
 2sc2438.pdf pdf_icon

2SC2435

JMnic Product Specification Silicon NPN Power Transistors 2SC2438 DESCRIPTION With TO-220C package Low collector saturation voltage High reliability APPLICATIONS Switching regulators Ultrasonic generators High frequency inverters General purpose power amplifiers PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterAbso

 8.2. Size:196K  inchange semiconductor
 2sc2438.pdf pdf_icon

2SC2435

isc Silicon NPN Power Transistor 2SC2438DESCRIPTIONLow Collector Saturation Voltage-:V = 0.5(V)(Max)@ I = 4ACE(sat) CHigh Switching SpeedHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsUltrasonic generatorsHigh frequency invertersGeneral purpose power amplifiersABSOLUTE M

 8.3. Size:188K  inchange semiconductor
 2sc2437.pdf pdf_icon

2SC2435

isc Silicon NPN Power Transistor 2SC2437DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 400V (Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsDC-DC convertorSolid state relayGeneral purpose power amplifiersABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PA

 8.4. Size:213K  inchange semiconductor
 2sc2433.pdf pdf_icon

2SC2435

isc Silicon NPN Power Transistor 2SC2433DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-V = 120V(Min)(BR)CEOHigh Current CapabilityWide Area of Safe OperationComplement to Type 2SA1043Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower switching applicationsHigh frequency power amplifierSwitching regula

MOSTRAR MÁS

Otros transistores... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: 2SD882SQ-E | DTC115EEB

 

 
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