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2SC2462B . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SC2462B
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.15 W
   Tensión colector-base (Vcb): 50 V
   Tensión colector-emisor (Vce): 40 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 125 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 115 MHz
   Capacitancia de salida (Cc): 1.8 pF
   Ganancia de corriente contínua (hfe): 150
   Paquete / Cubierta: TO236

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2SC2462B Datasheet (PDF)

 7.1. Size:24K  hitachi
2sc2462.pdf

2SC2462B
2SC2462B

2SC2462Silicon NPN EpitaxialApplicationLow frequency amplifierOutlineMPAK311. Emitter2. Base23. Collector2SC2462Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 50 VCollector to emitter voltage VCEO 40 VEmitter to base voltage VEBO 5VCollector current IC 100 mAEmitter current IE 100 mACollector power dissipat

 7.2. Size:326K  kexin
2sc2462.pdf

2SC2462B

SMD Type TransistorsNPN Transistors2SC2462SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features Collector Current Capability IC=100mA Collector Emitter Voltage VCEO=40V1 2+0.10.95-0.1 0.1+0.05-0.01+0.11.9-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 50 Collect

 8.1. Size:135K  toshiba
2sc2461a.pdf

2SC2462B
2SC2462B

 8.2. Size:24K  hitachi
2sc2463.pdf

2SC2462B
2SC2462B

2SC2463Silicon NPN EpitaxialApplicationLow frequency amplifierOutlineMPAK311. Emitter2. Base23. Collector2SC2463Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 55 VCollector to emitter voltage VCEO 50 VEmitter to base voltage VEBO 5VCollector current IC 100 mACollector power dissipation PC 150 mWJunction temper

 8.3. Size:36K  hitachi
2sc2468 2sc2469.pdf

2SC2462B

 8.4. Size:34K  no
2sc2464.pdf

2SC2462B

 8.5. Size:36K  no
2sc2466.pdf

2SC2462B

 8.6. Size:324K  kexin
2sc2463.pdf

2SC2462B

SMD Type TransistorsNPN Transistors2SC2463SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13 Features Collector Current Capability IC=100mA Collector Emitter Voltage VCEO=50V 1 2+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 55 Colle

 8.7. Size:178K  inchange semiconductor
2sc2461a.pdf

2SC2462B
2SC2462B

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC2461ADESCRIPTIONWith TO-3 PackageComplementary to 2SA1051AMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSRecommended for 10W high-fidelity audio frequency amplifieroutput stageABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Vol

 8.8. Size:203K  inchange semiconductor
2sc2461.pdf

2SC2462B
2SC2462B

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC2461DESCRIPTIONWith TO-3 PackageComplementary to 2SA1051Minimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSRecommended for 10W high-fidelity audio frequency amplifieroutput stageABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Volta

 8.9. Size:194K  inchange semiconductor
2sc2460.pdf

2SC2462B
2SC2462B

isc Silicon NPN Power Transistor 2SC2460DESCRIPTIONHigh Current CapabilityCollector-Emitter Breakdown Voltage-: V = 140V(Min.)(BR)CEOComplement to Type 2SA1050Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifer and general purposeapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAM

Otros transistores... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D882P , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

 

 
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