2SC2473 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

2SC2471Silicon NPN EpitaxialApplication UHF Amplifier UHF TV Tuner, Local oscillatorOutlineTO-92 (2)1. Base2. Emitter3. Collector3212SC2471Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 30 VCollector to emitter voltage VCEO 30 VEmitter to base voltage VEBO 3VCollector current IC 50 mACollector power diss

2SC2498 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC2498 VHF~UHF Band Low Noise Amplifier Application Unit: mm Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 30 VCollector-emitter voltage VCEO 20 VEmitter-base voltage VEBO 3 VCollector current IC 50 mABase current IB 25 mACollector power dissipation PC 300

2SC2458(L) TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2458(L) Audio Amplifier Applications Unit: mmLow Noise Audio Amplifier Applications High current capability: IC = 150 mA (max) High DC current gain: h = 70~700 FE Excellent h linearity: h (I = 0.1 mA)/h (I = 2 mA) = 0.95 (typ.) FE FE C FE C Low noise: NF (2) = 0.2dB (typ.), 3dB (max)

2SC2458(L) TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2458(L) Audio Amplifier Applications Unit: mm Low Noise Audio Amplifier Applications High current capability: IC = 150 mA (max) High DC current gain: h = 70~700 FE Excellent h linearity: h (I = 0.1 mA)/h (I = 2 mA) = 0.95 (typ.) FE FE C FE C Low noise: NF (2) = 0.2dB (typ.), 3dB (max)

2SC2459 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2459 Audio Amplifier Applications Unit: mm High breakdown voltage: VCEO = 120 V (max) High DC current gain: h = 200~700 FE Excellent h linearity: h (I = 0.1 mA)/h (I = 2 mA) = 0.95 (typ.) FE FE C FE C Low noise: NF = 1dB (typ.), 10dB (max) Complementary to 2SA1049. Small package

High-frequency Amplifier Transistor (25V, 50mA, 300MHz) 2SC5659 / 2SC4618 / 2SC4098 / 2SC2413K Features Dimensions (Unit : mm) 1) Low collector capacitance. (Cob : Typ. 1.3pF) 2SC56591.22) Low rbb, high gain, and excellent noise characteristics. 0.2 0.8 0.2(2)(3)(1)(1) Base0.15Max.ROHM : VMT3(2) EmitterAbsolute maximum ratings (Ta=25C) (3) Collector

2SC2411KDatasheetMedium Power Transistor (32V, 500mA)lOutlinelParameter Value SMT3VCEO32VIC500mA2SC2411KSOT-346 lFeaturesl1) High ICMAX lInner circuitl ICMAX=0.5A2)Low VCE(sat) Optimal for low voltage operation.3)Complements the 2SA1036K.lApplicationlDRIVING CIRCUIT, LOW FREQ

General purpose transistor (50V, 0.15A) 2SC2412K / 2SC4081 / 2SC4617 / 2SC5658 Features Dimensions (Unit : mm) 1. Low Cob. Cob=2.0pF (Typ.)Cob=2.0pF (Typ.) 2SC2412K 2SC40812. Complements the 2SA1037AK / 2SA1576A / 2SA1774H / 2SA2029. 1.251.62.12.8Structure Epitaxial planar type 0.1Min.0.3Min.NPN silicon transistor Each lead has same dimensions Each lead

General purpose transistor (50V, 0.15A) 2SC2412K / 2SC4081 / 2SC4617 / 2SC5658 / 2SC1740S Features Dimensions (Unit : mm) 1. Low Cob. Cob=2.0pF (Typ.)Cob=2.0pF (Typ.) 2SC2412K 2SC4081 2SC46172. Complements the 2SA1037AK / 2SA1576A / 2SA1774H / 2SA2029 / 2SA933AS. (1)(2)(3)1.251.6 0.82.12.81.6Structure Epitaxial planar type 0.1Min. 0.1Min.0.3Min.NPN

2SC2411KFRA2SC2411K TransistorsAEC-Q101 QualifiedMedium Power Transistor (32V, 0.5A) 2SC2411K 2SC2411KFRA Features External dimensions (Units : mm) 1) High ICMax.2SC2411KFRA2SC2411KICMax. = 0.5A2) Low VCE(sat).2.90.2Optimal for low voltage operation. 1.1+0.21.90.2 -0.10.80.10.95 0.952SA1036KFRA3) Complements the 2SA1036K. (1) (2)0 0.1(3)

2SC5658 / 2SC4617EB / 2SC46172SC4081UB / 2SC4081U3 / 2SC2412KDatasheetGeneral purpose small signal amplifier(50V, 150mA)lOutlinelParameter Value SC-105AA SOT-416FLVCEO50VIC150mA 2SC5658 2SC4617EB(VMT3) (EMT3F)lFeatures SOT-416 SOT-323FLl1)Low Cob.Cob=2.0pF(Typ.) 2)Complements the 2SA2029/2SC4617 2SC4081UB 2SA1774EB/2SA

2SC5658 / 2SC4617EB / 2SC46172SC4081UB / 2SC4081 / 2SC2412KDatasheetGeneral purpose small signal amplifier(50V, 150mA)lOutlinelParameter Value SC-105AA SOT-416FLVCEO50VIC150mA 2SC5658 2SC4617EB(VMT3) (EMT3F)lFeatures SOT-416 SOT-323FLl1)Low Cob.Cob=2.0pF(Typ.) 2)Complements the 2SA2029/2SC4617 2SC4081UB 2SA1774EB/2SA17

2SC2412K FRADatasheetGeneral purpose small signal amplifier(50V, 150mA)AEC-Q101 QualifiedlOutlinel SOT-346 Parameter Value SC-59 VCEO50VIC150mASMT3lFeatures lInner circuitl l1)Low Cob.Cob=2.0pF(Typ.)2)Complements the 2SA1037AK FRA.lApplicationlGENERAL PURPOSE SMALL SIGNAL AMPLIFIER

MCC2SC2411-PMicro Commercial ComponentsTM20736 Marilla Street ChatsworthMicro Commercial Components 2SC2411-QCA 91311Phone: (818) 701-49332SC2411-RFax: (818) 701-4939Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information)NPN Silicon High IC. ICMax.= 0.5 A Low VCE(sat).Optimal for low voltage operation.

MCC2SC2411-PMicro Commercial ComponentsTM20736 Marilla Street ChatsworthMicro Commercial Components 2SC2411-QCA 91311Phone: (818) 701-49332SC2411-RFax: (818) 701-4939Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information)NPN Silicon High IC. ICMax.= 0.5 A Low VCE(sat).Optimal for low voltage operation.

MCCMicro Commercial ComponentsTM2SC2458-Y20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Lead Free Finish/Rohs Compliant ("P"Suffix designates NPNCompliant. See ordering information) Epoxy meets UL 94 V-0 flammability ratingPlastic-Encapsulate Moisture Sensitivity Level 1 Power diss

MCC2SC2458-YMicro Commercial ComponentsTM20736 Marilla Street ChatsworthMicro Commercial Components2SC2458-GRCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Lead Free Finish/Rohs Compliant ("P"Suffix designates NPNCompliant. See ordering information) Epoxy meets UL 94 V-0 flammability ratingPlastic-Encapsulate Moisture Sensitivity Level 1

MCCMicro Commercial ComponentsTM 2SC248220736 Marilla Street ChatsworthMicro Commercial ComponentsCA 913112SC2482-OPhone: (818) 701-4933Fax: (818) 701-4939 2SC2482-YFeatures High Voltage:Vceo=300V Small collector output capacitance:Cob=3.0pF(Typ)NPN Epoxy meets UL 94 V-0 flammability ratingEpitaxial Silicon Moisture Sensitivity Level 1 Lead Free

MCC2SC2411-PMicro Commercial ComponentsTM20736 Marilla Street ChatsworthMicro Commercial Components 2SC2411-QCA 91311Phone: (818) 701-49332SC2411-RFax: (818) 701-4939Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information)NPN Silicon High IC. ICMax.= 0.5 A Low VCE(sat).Optimal for low voltage operation.

MCCMicro Commercial ComponentsTM 2SC248220736 Marilla Street ChatsworthMicro Commercial ComponentsCA 913112SC2482-OPhone: (818) 701-4933Fax: (818) 701-4939 2SC2482-YFeatures High Voltage:Vceo=300V Small collector output capacitance:Cob=3.0pF(Typ)NPN Epoxy meets UL 94 V-0 flammability ratingEpitaxial Silicon Moisture Sensitivity Level 1 Lead Free

Transistor2SC2405, 2SC2406Silicon NPN epitaxial planer typeFor low-frequency and low-noise amplificationUnit: mmComplementary to 2SA1034 and 2SA1035Features+0.22.8 0.3 Low noise voltage NV.+0.250.65 0.15 1.5 0.05 0.65 0.15 High foward current transfer ratio hFE. Mini type package, allowing downsizing of the equipment andautomatic insertion through the tape

Power Transistors2SC2497, 2SC2497ASilicon NPN epitaxial planar typeUnit: mmFor low-frequency power amplification8.0+0.50.13.20.2Complementary to 2SA1096 and 2SA1096A 3.160.1 Features High collector to emitter voltage VCEO TO-126B package which requires no insulation plate for installa-tion to the heat sink Absolute Maximum Ratings TC = 25CParameter

Transistor2SC2480Silicon NPN epitaxial planer typeFor high-frequency amplification/oscillation/mixingUnit: mm+0.22.8 0.3+0.25Features 0.65 0.15 1.5 0.05 0.65 0.15High transition frequency fT.Mini type package, allowing downsizing of the equipment and1automatic insertion through the tape packing and the magazinepacking.32Absolute Maximum Ratings (Ta=25

Transistors2SC2480Silicon NPN epitaxial planer typeUnit: mm0.40+0.10For high-frequency amplification / oscillation / mixing 0.050.16+0.100.063 Features1 2 High transition frequency fT(0.95) (0.95) Mini type package, allowing downsizing of the equipment and1.90.1automatic insertion through the tape packing and the magazine2.90+0.200.05packing.

Transistor2SC2405, 2SC2406Silicon NPN epitaxial planer typeFor low-frequency and low-noise amplificationUnit: mmComplementary to 2SA1034 and 2SA1035Features+0.22.8 0.3 Low noise voltage NV.+0.250.65 0.15 1.5 0.05 0.65 0.15 High foward current transfer ratio hFE. Mini type package, allowing downsizing of the equipment andautomatic insertion through the tape

Transistor2SC2404Silicon NPN epitaxial planer typeFor high-frequency amplificationUnit: mm+0.22.8 0.3+0.25Features 0.65 0.15 1.5 0.05 0.65 0.15Optimum for RF amplification of FM/AM radios.High transition frequency fT.1Mini type package, allowing downsizing of the equipment andautomatic insertion through the tape packing and the magazine3packing.2Abs

Transistor2SC2404Silicon NPN epitaxial planer typeFor high-frequency amplificationUnit: mm+0.22.8 0.3+0.25Features 0.65 0.15 1.5 0.05 0.65 0.15Optimum for RF amplification of FM/AM radios.High transition frequency fT.1Mini type package, allowing downsizing of the equipment andautomatic insertion through the tape packing and the magazine3packing.2Abs

Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com

2SC2463Silicon NPN EpitaxialApplicationLow frequency amplifierOutlineMPAK311. Emitter2. Base23. Collector2SC2463Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 55 VCollector to emitter voltage VCEO 50 VEmitter to base voltage VEBO 5VCollector current IC 100 mACollector power dissipation PC 150 mWJunction temper

2SC2462Silicon NPN EpitaxialApplicationLow frequency amplifierOutlineMPAK311. Emitter2. Base23. Collector2SC2462Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 50 VCollector to emitter voltage VCEO 40 VEmitter to base voltage VEBO 5VCollector current IC 100 mAEmitter current IE 100 mACollector power dissipat

2SC2412 0.15A , 60V NPN Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-23 FEATURE Low Cob, Cob=2.0pF AL Complements of the 2SA1037 33Top ViewC BCLASSIFICATION OF hFE 11 22K EProduct-Rank 2SC2412-Q 2SC2412-R 2SC2412-S Range 120~270 180~390 270~560 DMarking Code BQ B

2SC2411NPN TransistorElektronische BauelementePlastic-Encapsulate TransistorsA suffix of "-C" specifies halogen & lead-freeSOT-23 Dim Min Max Collector3A 2.800 3.040FEATURES1 B 1.200 1.400Base 2C 0.890 1.110nEmitterPower DissipationoD 0.370 0.500 PCM: 200 mW ( Tamb= 25 C)G 1.780 2.040AnRoHS Compliant ProductH 0.013 0.100LJ J 0.085 0.

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 2SC2412 TRANSISTOR (NPN) FEATURES 1. BASE Low Cob ,Cob = 2.0 pF (Typ). 2. EMITTER 3. COLLECTOR MARKING : BQ, BR, BS MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEB

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate Transistors J C T TO-92L 2SC2482 TRANSISTOR (NPN) 1. EMITTER FEATURE High Voltage :VCEO=300V 2. COLLECTOR Small Collector Output Capacitance: Cob=3.0pF(Typ) 3. BASE MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 300 VVCEO Co

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 2SC2411 TRANSISTOR(NPN)1. BASEFEATURES 2. EMITTER3. COLLECTOR High ICMax.ICMax. = 0.5mA Low VCE(sat).Optimal for low voltage operation. Complements the 2SA1036MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 40 V VCE

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92S Plastic-Encapsulate TransistorsTO 92S 2SC2458 TRANSISTOR (NPN)1. EMITTERFEATURES 2. COLLECTOR High Current Capability3. BASE High DC Current Gain123 Excellent hFE Linearity Complementary to 2SA1048 Equivalent Circuit C2458C2458=Device codeSolid dot = Green molding compound device,

www.jscj-elec.com AD-2SC2412 series JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD. AD-2SC2412 series Plastic-Encapsulated Transistor AD-2SC2412 series Transistor (NPN) FEATURES Low Cob ,Cob = 2.0 pF (Typ) AEC-Q101 qualified CLASSIFICATION of hFE Rank AD-2SC2412-Q AD-2SC2412-R AD-2SC2412-S Range 120-270 180-390 270-560 BQ BR BS Marking Version 1.0 1 /

JMnic Product Specification Silicon NPN Power Transistors 2SC2440 DESCRIPTION With TO-220C package High voltage ,high speed switching High reliability APPLICATIONS Switching regulators Ultrasonic generators High frequency inverters General purpose power amplifiers PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterAb

Product Specification www.jmnic.com Silicon Power Transistors 2SC2485 DESCRIPTION With TO-3PN package Complement to type 2SA1061 High collector power dissipation APPLICATIONS High power audio frequency amplifier PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterFig.1 simplified outline (TO-3PN) and symbol LIMITING VALUES SYMB

JMnic Product Specification Silicon NPN Power Transistors 2SC2438 DESCRIPTION With TO-220C package Low collector saturation voltage High reliability APPLICATIONS Switching regulators Ultrasonic generators High frequency inverters General purpose power amplifiers PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterAbso

2SC2412TRANSISTOR (NPN)SOT-23 FEATURES 1. BASE Low Cob ,Cob = 2.0 pF (Typ). 2. EMITTER 3. COLLECTOR MARKING : BQ, BR, BS MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 7 V IC Collector Current -Continuous 150 mA PC Collector Power Dissi

2SC2411SOT-23 TRANSISOR(NPN) 1. BASE 2. EMITTER FEATURES High ICMax.ICMax. = 0.5mA 3. COLLECTOR Low VCE(sat).Optimal for low voltage operation. Complements the 2SA1036 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 32 V VEBO Emitter-Base Voltage 5 V Collector Current

2SC2411 SOT-23 Transistor(NPN)1. BASE SOT-232. EMITTER 3. COLLECTOR FeaturesHigh ICMax.ICMax. = 0.5mA Low VCE(sat).Optimal for low voltage operation. Complements the 2SA1036 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 40 V Dimensions in inches and (millimeters)VCEO Collector-Emitter Voltage 32

2SC2412 SOT-23 Transistor(NPN)SOT-231. BASE 2. EMITTER 3. COLLECTOR Features Low Cob ,Cob = 2.0 pF (Typ). MARKING : BQ, BR, BS MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 60 V Dimensions in inches and (millimeters)VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 7 V IC Collector Current -C

2SC2482 TO-92MOD Transistor (NPN)TO-92MOD1. EMITTER 1 22. COLLECTOR 3 3. BASE Features5.800 High voltage :Vceo=300V 6.200 Small collector output capacitance: Cob=3.0pF(Typ) 8.4008.8000.9001.1000.4000.600MAXIMUM RATINGS (TA=25 unless otherwise noted) 13.80014.200Symbol Parameter Value UnitsVCBO Collector-Base Voltage 300 V1.500 TYPVCE

2SC2482 TO-92L Transistor (NPN)TO-92L1. EMITTER 2. COLLECTOR 3. BASE 2 3 14.700Features5.100 High voltage :Vceo=300V 7.800 Small collector output capacitance: Cob=3.0pF(Typ) 8.2000.6000.800MAXIMUM RATINGS (TA=25 unless otherwise noted) 0.3500.55013.800Symbol Parameter Value Units14.200VCBO Collector-Base Voltage 300 VVCEO Collector-Emitter

2SC2412K SOT-23-3L Transistor(NPN)1. BASE SOT-23-3L2. EMITTER 2.923. COLLECTOR 0.351.17Features Low Cob ,Cob = 2.0 pF (Typ). 2.80 1.60 Complements the 2SA1037AK MARKING : BQ, BR, BS 0.151.90MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters)Symbol Parameter Value UnitsVCBO Collector-Base Voltage 60 V VCEO Collector-E

2SC2411KNPN General Purpose Transistors31P b Lead(Pb)-Free2SOT-23MAXIMUM RATINGS(Ta=25C)Rating Symbol Value UnitCollector-Emitter VoltageVCEO32 VVCBOCollector-Base Voltage 40 VVEBOEmitter-Base Voltage 5.0 VICCollector Current - Continuous 500 mATotal Device DissipationPD200 mWTA=25CTj CJunction Temperature +150TstgStorage Temperature -55 t

2SC2412KNPN312SOT-23ValueV 50CEO607.01502001.6625T ,TstgJ 1.050 50 607.0 50u0.1I OVdc, E= E= 50 0 )u0.1 600.1 u7.0WEITRON1/5 24-Jul-07http://www.weitron.com.tw2SC2412KELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued)CharacteristicsSymbol Min Typ Max UnitON CHARACTERISTICSDC Current GainhF

FM120-M WILLAS2SC2412KxLT1THRUGeneral Purpose TransistorsFM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProductNPN SiliconPackage outline We declare that the material of product compliance with RoHS requirements.Features Batch process design, excellent power dissipation offers better reverse leakage current and ther

FM120-M WILLAS2SC2411KxLT1THRUMedium Power TransistorFM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProductPackage outlineFeatures Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.SOD-123H Low profile surface mounted application in order toNPN silicon

2SC2412K Rev.FApr.-2017 DATA SHEET / Descriptions SOT-23 NPN Silicon NPN transistor in a SOT-23 Plastic Package. / Features Low Cob. / Applications General amplifier. / Equivalent Circuit / Pinning 3 1 2 PIN1Base PIN

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN Silicon We declare that the material of product compliance with RoHS requirements.L2SC2412KQMT1GS- Prefix for Automotive and Other Applications Requiring Unique SiteSeriesand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.S-L2SC2412KQMT1GORDERING INFORMATIONSeriesDevice Marking ShippingL2SC2

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN SiliconL2SC2412KQLT1G We declare that the material of product compliance with RoHS requirements.SeriesS- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.S-L2SC2412KQLT1GORDERING INFORMATIONSeriesDevice Marking ShippingL2SC2

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN SiliconL2SC2412KQLT1G We declare that the material of product compliance with RoHS requirements.S- Prefix for Automotive and Other Applications Requiring Unique Site Seriesand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.L2SC2412KQLT1GORDERING INFORMATIONSeriesDevice Marking ShippingL2SC2412

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN SiliconL2SC2412KQLT1G We declare that the material of product compliance with RoHS requirements.S- Prefix for Automotive and Other Applications Requiring Unique Site Seriesand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.L2SC2412KQLT1GORDERING INFORMATIONSeriesDevice Marking ShippingL2SC2412

LESHAN RADIO COMPANY, LTD.Medium Power TransistorL2SC2411KQLT1GNPN silicon SeriesFEATURES-L2SC2411KQLT1G Epitaxial planar typeSeries Complementary to L2SA1036K We declare that the material of product are Halogen Free and3compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements,AEC-q101

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN SiliconL2SC2412KQMT1G We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique SiteSeriesand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.S-L2SC2412KQMT1GORDERING INFORMATIONSeriesDevice Marking ShippingL2SC

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN SiliconL2SC2412KQLT1G We declare that the material of product compliance with RoHS requirements.SeriesS- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.S-L2SC2412KQLT1GORDERING INFORMATIONSeriesDevice Marking ShippingL2SC2

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN SiliconL2SC2412KQLT1G We declare that the material of product compliance with RoHS requirements.S- Prefix for Automotive and Other Applications Requiring Unique Site Seriesand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.L2SC2412KQLT1GORDERING INFORMATIONSeriesDevice Marking ShippingL2SC2412

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN SiliconL2SC2411KRLT1GFEATURESS-L2SC2411KRLT1G1) We declare that the material of product compliant with RoHS requirements and Halogen Free.32) S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.12SOT 23 DEVICE MARK

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN Silicon We declare that the material of product compliance with RoHS requirements.L2SC2412KQMT1GS- Prefix for Automotive and Other Applications Requiring Unique SiteSeriesand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.S-L2SC2412KQMT1GORDERING INFORMATIONSeriesDevice Marking ShippingL2SC2

L2SC2411KRLT1GS-L2SC2411KRLT1GGeneral Purpose Transistors NPN Silicon1. FEATURES We declare that the material of product compliance withRoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101SOT23 qualified and PPAP capable.2. DEVICE MARKING AND ORDERING INFORMATIONDevice Mark

SMD Type orSMD Type TransistICsNPN Transistors2SC2412 (2SC2412K)SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13FeaturesLow Cob.Cob=2.0pF (Typ.)1 2+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collectorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-base voltage VCBO 60 VCollector-emitter voltage VCEO 50 VEmitter-base v

SMD Type ICSMD Type TransistorsGeneral Purpose Transistor2SC2412SOT-23Unit: mm+0.12.9-0.1+0.10.4-0.13FeaturesLow Cob.Cob=2.0pF (Typ.)12+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.11.Base2.Emitter3.collectorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-base voltage VCBO 60 VCollector-emitter voltage VCEO 50 VEmitter-base voltage

SMD Type TransistorsNPN Transistors2SC2463SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13 Features Collector Current Capability IC=100mA Collector Emitter Voltage VCEO=50V 1 2+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 55 Colle

SMD Type TransistorsNPN Transistors2SC2406SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13 Features Collector Current Capability IC=50mA Collector Emitter Voltage VCEO=55V1 2+0.1+0.050.95 -0.1 0.1 -0.01 Complementary to 2SA1035+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector

SMD Type TransistorsNPN Transistors2SC2411 (2SC2411K)SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features Collector Current Capability IC=0.5A1 2 Low VCE(sat).Optimal for low voltage operation.+0.050.95+0.1-0.1 0.1 -0.011.9+0.1-0.1 Complements the 2SA1036/2SA1036K1.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter

SMD Type TransistorsNPN Transistors2SC2405SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13 Features Collector Current Capability IC=50mA Collector Emitter Voltage VCEO=35V1 2+0.1+0.050.95 -0.1 0.1 -0.01 Complementary to 2SA1034+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector

SMD Type ICSMD Type TransistorsGeneral Purpose Transistor2SC2412SOT-23Unit: mm+0.12.9-0.1+0.10.4-0.13FeaturesLow Cob.Cob=2.0pF (Typ.)12+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.11.Base2.Emitter3.collectorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-base voltage VCBO 60 VCollector-emitter voltage VCEO 50 VEmitter-base voltage

SMD Type TransistorsNPN Transistors2SC2480SOT-23Unit: mm+0.12.9 -0.10.4+0.1-0.13 Features Collector Current Capability IC=50mA1 2 Collector Emitter Voltage VCEO=20V+0.1+0.050.95 -0.1 0.1-0.01+0.11.9-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collect

SMD Type ICSMD Type TransistorsGeneral Purpose Transistor2SC2412SOT-23Unit: mm+0.12.9-0.1+0.10.4-0.13FeaturesLow Cob.Cob=2.0pF (Typ.)12+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.11.Base2.Emitter3.collectorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-base voltage VCBO 60 VCollector-emitter voltage VCEO 50 VEmitter-base voltage

SMD Type TransistorsNPN Transistors2SC2462SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features Collector Current Capability IC=100mA Collector Emitter Voltage VCEO=40V1 2+0.10.95-0.1 0.1+0.05-0.01+0.11.9-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 50 Collect

SMD Type TransistorsNPN Transistors2SC2404SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13 Features Collector Current Capability IC=15mA Collector Emitter Voltage VCEO=20V1 2+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Colle

2SC2411KNPN GENERAL PURPOSE SWITCHING TRANSISTORVOLTAGE 32 Volts POWER 225mWFEATURES0.120(3.04) NPN epitaxial silicon,planar design0.110(2.80) Collector-emitter voltage VCE=32V Collector current IC=500mA Lead free in comply with EU RoHS 2011/65/EU directives. Green molding compound as per IEC61249 Std. . (Halogen Free)0.056(1.40)0.047(1.20)MECHANICAL DAT

CHENMKO ENTERPRISE CO.,LTD2SC2411KGPSURFACE MOUNT Medium Power NPN Transistor VOLTAGE 32 Volts CURRENT 0.5 AmpereAPPLICATION* Medium Power Amplifier .FEATURE* Surface mount package. (SOT-23)SOT-23* Low saturation voltage V* Low cob. Cob=6.0pF(Typ.)CE(sat)=0.4V(max.)(IC=500mA) * PC= 200mW (mounted on ceramic substrate).* High saturation current capability.(1)CONST

CHENMKO ENTERPRISE CO.,LTD2SC2412KGPSURFACE MOUNT General Purpose Transistor VOLTAGE 50 Volts CURRENT 0.15 AmpereAPPLICATION* Small Signal Amplifier .FEATURE* Surface mount package. (SOT-23)SOT-23* Low saturation voltage VCE(sat)=-0.4V(max.)(IC=50mA) * Low cob. Cob=2.0pF(Typ.)* PC= 200mW (mounted on ceramic substrate).* High saturation current capability.(1)CONST

CHENMKO ENTERPRISE CO.,LTD2SC2412WGPSURFACE MOUNT General Purpose Transistor VOLTAGE 50 Volts CURRENT 0.15 AmpereAPPLICATION* Small Signal Amplifier .FEATURE* Surface mount package. (SC-70/SOT-323)SC-70/SOT-323* Low saturation voltage VCE(sat)=-0.4V(max.)(IC=50mA) * Low cob. Cob=2.0pF(Typ.)* PC= 150mW (mounted on ceramic substrate).* High saturation current capabilit

Product specification Silicon Epitaxial Planar Transistor 2SC2412 FEATURES Low C .C =2.0pF ob obPb Complementary to 2SA1037 Lead-free APPLICATIONS NPN Silicon Epitaxial Planar Transistor SOT-23 ORDERING INFORMATION Type No. Marking Package Code 2SC2412 BQ/BR/BS SOT-23 : none is for Lead Free package; G is for Halogen Free package. MAXI

2SC2412KNPN Transistors3 2Features1.BaseLow Cob.Cob=2.0pF (Typ.)2.Emitter1 3.Collector Simplified outline(SOT-23)Absolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-base voltage VCBO 60 VCollector-emitter voltage VCEO 50 VEmitter-base voltage VEBO 7 VCollector current IC 0.15 ACollector power dissipation PC 0.2 WJunction temperature Tj 150

2SC2412TRANSISTOR (NPN)MARKING : Equivalent Circuit :SOT-231.BASE2.EMITTER3.COLLECTORFEATURES: LOW Cob, Cob=2.0 PF(TYP)MAXIMUM RATINGS (Ta=25 unless otherwise noted)Parameter Symbol Value UnitCollector-Base Voltage VCBO 60 VCollector-Emitter Voltage VCEO 50 VEmitter-Base Voltage VEBO 7 VCollector Current -Continuous IC 150 mACollector Current -Puised ICM 200

ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO., LTDFEATURES NPN General Purpose TransistorMAXIMUM RATINGS (T =25) aCharacteristic Symbol Rating Unit Collector-Base VoltageV 60 VCBO-Collector-Emitter VoltageV 50 VCEO-Emitte

Plastic-Encapsulate TransistorsFEATURES (NPN)2SC2412Low Cob ,Cob = 2.0 pF (Typ). MARKING : BQ, BR, BS MAXIMUM RATINGS (Ta=25 unless otherwise noted) 1. BASESymbol Parameter Value Unit2. EMITTER SOT-23VCBO Collector-Base Voltage 60 V 3. COLLECTOVCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 7 V IC Collector Current -Continuous 150 mA PC Collector P

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC2461ADESCRIPTIONWith TO-3 PackageComplementary to 2SA1051AMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSRecommended for 10W high-fidelity audio frequency amplifieroutput stageABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Vol

isc Silicon NPN Power Transistor 2SC2440DESCRIPTIONHigh Collector-Emitter Sustaining Voltage-:V = 400(V)(Min.)CEO(SUS)High Switching SpeedHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsUltrasonic generatorsHigh frequency invertersGeneral purpose power amplifiersABSOLUTE

isc Silicon NPN Power Transistor 2SC2486DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 120V(Min)(BR)CEOHigh Power DissipationComplement to Type 2SA1062Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power audio frequency amplifierapplicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAME

isc Silicon NPN Power Transistor 2SC2429DESCRIPTIONHigh Collector-Emitter Sustaining Voltage-: V = 400V (Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for converters and inverters applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER MAX UNITV Collector-Base Volta

isc Silicon NPN Power Transistor 2SC2488DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 150V(Min.)(BR)CEOGood Linearity of hFEWide Area of Safe OperationComplement to Type 2SA1064Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for AF amplifier, high power amplifier applications.ABSOLUTE MAXIMUM RATI

isc Silicon NPN Power Transistor 2SC2489DESCRIPTION Good Linearity of hFECollector-Emitter Sustaining Voltage-: V = 150V (Min)CEO(SUS)Wide Area of Safe OperationComplement to Type 2SA1065Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for AF amplifier,high power amplifier applications.ABSOLUTE MAXIMUM RA

isc Silicon NPN Power Transistor 2SC2485DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 100V(Min)(BR)CEOHigh Power DissipationComplement to Type 2SA1061Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power audio frequency amplifierapplicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAME

INCHANGE Semiconductorisc Silicon NPN Pow Transistor 2SC2482DESCRIPTIONHigh breakdown voltageLow output capacitance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSColor TV chroma output applicationsColor TV horiz. driver applicationsHigh voltage switching and amplifier applicationsABSOLUTE MA

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC245DESCRIPTIONWith TO-3 PackageLow collector saturation voltageMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for color TV horizontal deflection driverABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 120 VCBOV

isc Silicon NPN Power Transistor 2SC2414DESCRIPTION High Switching SpeedCollector-Emitter Sustaining Voltage-: V = 400V (Min)CEO(SUS)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high speed power switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER MAX UNITV Collector-Base Voltage

isc Silicon NPN Power Transistor 2SC2438DESCRIPTIONLow Collector Saturation Voltage-:V = 0.5(V)(Max)@ I = 4ACE(sat) CHigh Switching SpeedHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsUltrasonic generatorsHigh frequency invertersGeneral purpose power amplifiersABSOLUTE M

isc Silicon NPN Power Transistor 2SC2437DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 400V (Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsDC-DC convertorSolid state relayGeneral purpose power amplifiersABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PA

isc Silicon NPN Power Transistor 2SC2433DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-V = 120V(Min)(BR)CEOHigh Current CapabilityWide Area of Safe OperationComplement to Type 2SA1043Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower switching applicationsHigh frequency power amplifierSwitching regula

isc Silicon NPN Power Transistor 2SC2416DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 400V (Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high speed power switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER MAX UNITV Collector-Base Voltage

isc Silicon NPN Power Transistor 2SC2484DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 80V(Min)(BR)CEOHigh Power DissipationComplement to Type 2SA1060Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power audio frequency amplifierapplicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMET

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2497 2SC2497A DESCRIPTION With TO-126 package Complement to type 2SA1096/A High collector to emitter voltage VCEO APPLICATIONS For low-frequency power amplification PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute maximum ratings(Ta=25)

isc Silicon NPN Power Transistor 2SC2415DESCRIPTION High Switching SpeedCollector-Emitter Sustaining Voltage-: V = 400V (Min)CEO(SUS)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high speed power switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER MAX UNITV Collector-Base Voltage

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC2481DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 150V(Min)(BR)CEOHigh Current CapabilityHigh Collector Power DissipationComplement to Type 2SA1021Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSColor TV vertical deflection output applications.Col

INCHANGE Semiconductorisc Silicon NPN RF Transistor 2SC2408DESCRIPTIONLow NoiseNF = 2.4 dB TYP. ;@ f = 200 MHzHigh GainS 2 = 21 dB TYP. ;@ f = 200 MHz21eMinimum Lot-to-Lot variations for robust deviceperformance and reliable operation.APPLICATIONSDesigned for use in high frequency wide band amplifier.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER V

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC2461DESCRIPTIONWith TO-3 PackageComplementary to 2SA1051Minimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSRecommended for 10W high-fidelity audio frequency amplifieroutput stageABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Volta

isc Silicon NPN Power Transistor 2SC2460DESCRIPTIONHigh Current CapabilityCollector-Emitter Breakdown Voltage-: V = 140V(Min.)(BR)CEOComplement to Type 2SA1050Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifer and general purposeapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAM