2SC2494M . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SC2494M
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 8.75 W
Tensión colector-base (Vcb): 25 V
Tensión emisor-base (Veb): 2 V
Corriente del colector DC máxima (Ic): 0.75 A
Temperatura operativa máxima (Tj): 200 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 500 MHz
Capacitancia de salida (Cc): 8 pF
Ganancia de corriente contínua (hfe): 20
Paquete / Cubierta: XM24
Búsqueda de reemplazo de transistor bipolar 2SC2494M
2SC2494M Datasheet (PDF)
2sc2498.pdf
2SC2498 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC2498 VHF~UHF Band Low Noise Amplifier Application Unit: mm Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 30 VCollector-emitter voltage VCEO 20 VEmitter-base voltage VEBO 3 VCollector current IC 50 mABase current IB 25 mACollector power dissipation PC 300
2sc2497.pdf
Power Transistors2SC2497, 2SC2497ASilicon NPN epitaxial planar typeUnit: mmFor low-frequency power amplification8.0+0.50.13.20.2Complementary to 2SA1096 and 2SA1096A 3.160.1 Features High collector to emitter voltage VCEO TO-126B package which requires no insulation plate for installa-tion to the heat sink Absolute Maximum Ratings TC = 25CParameter
2sc2497 2sc2497a.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2497 2SC2497A DESCRIPTION With TO-126 package Complement to type 2SA1096/A High collector to emitter voltage VCEO APPLICATIONS For low-frequency power amplification PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute maximum ratings(Ta=25)
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: 2SC3663 | PN2222A | 2N4928S | MD1122
History: 2SC3663 | PN2222A | 2N4928S | MD1122
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050