2SC2494M Todos los transistores

 8.1. Size:359K  toshiba
 2sc2498.pdf

2SC2498 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC2498 VHF UHF Band Low Noise Amplifier Application Unit mm Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 30 V Collector-emitter voltage VCEO 20 V Emitter-base voltage VEBO 3 V Collector current IC 50 mA Base current IB 25 mA Collector power dissipation PC 300

 8.2. Size:70K  panasonic
 2sc2497.pdf

Power Transistors 2SC2497, 2SC2497A Silicon NPN epitaxial planar type Unit mm For low-frequency power amplification 8.0+0.5 0.1 3.2 0.2 Complementary to 2SA1096 and 2SA1096A 3.16 0.1 Features High collector to emitter voltage VCEO TO-126B package which requires no insulation plate for installa- tion to the heat sink Absolute Maximum Ratings TC = 25 C Parameter

 8.3. Size:123K  inchange semiconductor
 2sc2497 2sc2497a.pdf

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2497 2SC2497A DESCRIPTION With TO-126 package Complement to type 2SA1096/A High collector to emitter voltage VCEO APPLICATIONS For low-frequency power amplification PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings(Ta=25 )