2SC2499 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

2SC2498 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC2498 VHF~UHF Band Low Noise Amplifier Application Unit: mm Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 30 VCollector-emitter voltage VCEO 20 VEmitter-base voltage VEBO 3 VCollector current IC 50 mABase current IB 25 mACollector power dissipation PC 300

Power Transistors2SC2497, 2SC2497ASilicon NPN epitaxial planar typeUnit: mmFor low-frequency power amplification8.0+0.50.13.20.2Complementary to 2SA1096 and 2SA1096A 3.160.1 Features High collector to emitter voltage VCEO TO-126B package which requires no insulation plate for installa-tion to the heat sink Absolute Maximum Ratings TC = 25CParameter

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2497 2SC2497A DESCRIPTION With TO-126 package Complement to type 2SA1096/A High collector to emitter voltage VCEO APPLICATIONS For low-frequency power amplification PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute maximum ratings(Ta=25)