2SC2503 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SC2503
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 80 W
Tensión colector-base (Vcb): 500 V
Tensión colector-emisor (Vce): 400 V
Tensión emisor-base (Veb): 7 V
Corriente del colector DC máxima (Ic): 8 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 10 MHz
Ganancia de corriente contínua (hFE): 15
Encapsulados: TO220
Búsqueda de reemplazo de 2SC2503
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2SC2503 datasheet
8.6. Size:210K lge
2sc2500 to-92l.pdf 
2SC2500 TO-92L Transistor (NPN) TO-92L 1. EMITTER 2. COLLECTOR 3. BASE 2 3 4.700 1 5.100 Features 7.800 8.200 Strobe flash applications 0.600 0.800 Medium power amplifier applications 0.350 0.550 13.800 14.200 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25 unless otherwise noted) 1.270 TYP 2.440 2.640 Symbol Parameter Value Units 0.000
8.7. Size:244K lge
2sc2500 to-92mod.pdf
2SC2500 TO-92MOD Transistor (NPN) TO-92MOD 1 1. EMITTER 2 3 2. COLLECTOR 3. BASE 5.800 Features 6.200 Strobe flash applications 8.400 8.800 Medium power amplifier applications 0.900 1.100 0.400 0.600 13.800 14.200 1.500 TYP 2.900 Dimensions in inches and (millimeters) 3.100 MAXIMUM RATINGS (TA=25 unless otherwise noted) 0.000 1.600 Symbol Parameter Va
8.8. Size:239K inchange semiconductor
2sc2507.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2507 DESCRIPTION Collector-Emitter Sustaining Voltage- VCEO(SUS)= 400V(Min) Fast Switching Speed Collector-Emitter Saturation Voltage- VCE(sat)= 0.7V(Max.)@ IC= 10A APPLICATIONS Designed for use in high-voltage, high-speed , power switching in inductive circuit , they are partic
8.9. Size:193K inchange semiconductor
2sc2501.pdf
isc Silicon NPN Power Transistors 2SC2501 DESCRIPTION With TO-220 packaging Reliable performance at higher powers Accurate reproduction of Input signal Greater dynamic range Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators High frequency inverters General purpose power amplifiers ABSOLUTE MAXIMUM RAT
8.10. Size:223K inchange semiconductor
2sc2502.pdf
isc Silicon NPN Power Transistor 2SC2502 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 400V(Min) CEO(SUS) Fast Switching Speed Collector-Emitter Saturation Voltage- V = 0.7V(Max.)@ I = 3A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in high-voltage, high-speed , power switching in in
Otros transistores... 2SC25, 2SC250, 2SC2500, 2SC2500A, 2SC2500B, 2SC2500C, 2SC2500D, 2SC2502, 2SC5200, 2SC2504, 2SC2505, 2SC2506, 2SC2507, 2SC2508, 2SC2509, 2SC251, 2SC2510
