2SC2509 Todos los transistores

 

2SC2509 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SC2509
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 20 W
   Tensión colector-base (Vcb): 40 V
   Tensión colector-emisor (Vce): 18 V
   Tensión emisor-base (Veb): 4 V
   Corriente del colector DC máxima (Ic): 5 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 100 MHz
   Capacitancia de salida (Cc): 150 pF
   Ganancia de corriente contínua (hfe): 20
   Paquete / Cubierta: TO220

 Búsqueda de reemplazo de transistor bipolar 2SC2509

 

2SC2509 Datasheet (PDF)

 8.2. Size:180K  toshiba
2sc2500.pdf

2SC2509
2SC2509

 8.3. Size:135K  mospec
2sc2502.pdf

2SC2509
2SC2509

AAA

 8.4. Size:77K  no
2sc2501.pdf

2SC2509
2SC2509

 8.5. Size:287K  no
2sc2504.pdf

2SC2509
2SC2509

 8.6. Size:210K  lge
2sc2500 to-92l.pdf

2SC2509
2SC2509

2SC2500 TO-92L Transistor (NPN)TO-92L1. EMITTER 2. COLLECTOR 3. BASE 2 3 4.70015.100Features7.8008.200 Strobe flash applications 0.6000.800 Medium power amplifier applications 0.3500.55013.80014.200Dimensions in inches and (millimeters)MAXIMUM RATINGS (TA=25 unless otherwise noted) 1.270 TYP2.4402.640Symbol Parameter Value Units0.000

 8.7. Size:244K  lge
2sc2500 to-92mod.pdf

2SC2509
2SC2509

2SC2500 TO-92MOD Transistor (NPN)TO-92MOD11. EMITTER 2 3 2. COLLECTOR 3. BASE 5.800Features 6.200 Strobe flash applications 8.4008.800 Medium power amplifier applications 0.9001.1000.4000.600 13.80014.2001.500 TYP2.900Dimensions in inches and (millimeters)3.100MAXIMUM RATINGS (TA=25 unless otherwise noted) 0.000 1.600Symbol Parameter Va

 8.8. Size:239K  inchange semiconductor
2sc2507.pdf

2SC2509
2SC2509

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2507 DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V(Min) Fast Switching Speed Collector-Emitter Saturation Voltage- : VCE(sat)= 0.7V(Max.)@ IC= 10A APPLICATIONS Designed for use in high-voltage, high-speed , power switching in inductive circuit , they are partic

 8.9. Size:193K  inchange semiconductor
2sc2501.pdf

2SC2509
2SC2509

isc Silicon NPN Power Transistors 2SC2501DESCRIPTIONWith TO-220 packagingReliable performance at higher powersAccurate reproduction of Input signalGreater dynamic rangeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsHigh frequency invertersGeneral purpose power amplifiersABSOLUTE MAXIMUM RAT

 8.10. Size:223K  inchange semiconductor
2sc2502.pdf

2SC2509
2SC2509

isc Silicon NPN Power Transistor 2SC2502DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 400V(Min)CEO(SUS)Fast Switching SpeedCollector-Emitter Saturation Voltage-: V = 0.7V(Max.)@ I = 3ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in high-voltage, high-speed , powerswitching in in

Otros transistores... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP42 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: ZUMT618

 

 
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History: ZUMT618

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