2SC2518 Todos los transistores

 

2SC2518 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SC2518
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 40 W
   Tensión colector-base (Vcb): 500 V
   Tensión colector-emisor (Vce): 400 V
   Tensión emisor-base (Veb): 7 V
   Corriente del colector DC máxima (Ic): 5 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 20
   Paquete / Cubierta: TO220

 Búsqueda de reemplazo de transistor bipolar 2SC2518

 

2SC2518 Datasheet (PDF)

 ..1. Size:170K  nec
2sc2518.pdf

2SC2518
2SC2518

 ..2. Size:221K  inchange semiconductor
2sc2518.pdf

2SC2518
2SC2518

isc Silicon NPN Power Transistor 2SC2518DESCRIPTIONHigh Collector-Emitter Sustaining Voltage-: V = 400V(Min)CEO(SUS)Low Collector Saturation VoltageHigh Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator, DC-DC converter andultrasonic applicance applications.ABSOLUTE MAXIM

 8.1. Size:237K  1
2sc2519.pdf

2SC2518
2SC2518

 8.2. Size:165K  toshiba
2sc2510.pdf

2SC2518
2SC2518

2SC2510 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2510 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS (28V SUPPLY VOLTAGE USE) Unit in mm Specified 28V, 28MHz Characteristics Output Power : Po = 150W (Min.) PEP Power Gain : Gp = 12.2dB (Min.) Collector Efficiency : C = 35% (Min.) Intermodulation Distortion: IMD = -30dB (Max.) MAXIMUM RATINGS (T

 8.3. Size:132K  nec
2sc2517.pdf

2SC2518
2SC2518

DATA SHEETSILICON POWER TRANSISTOR2SC2517NPN SILICON EPITAXIAL TRANSISTORFOR HIGH-SPEED SWITCHINGThe 2SC2517 is a mold power transistor developed for high- PACKAGE DRAWING (UNIT: mm)speed switching. This transistor is ideal for use in drivers such asswitching regulators, DC/DC converters, high-frequency poweramplifiers.FEATURES ow collector saturation voltage:

 8.4. Size:33K  hitachi
2sc2512.pdf

2SC2518
2SC2518

2SC2512Silicon NPN Triple DiffusedApplication VHF Amplifier VHF TV Tuner, MixerOutlineTO-92 (2)1. Base2. Emitter3. Collector3212SC2512Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 30 VCollector to emitter voltage VCEO 20 VEmitter to base voltage VEBO 3VCollector current IC 50 mACollector power dissipati

 8.5. Size:99K  savantic
2sc2517.pdf

2SC2518
2SC2518

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC2517 DESCRIPTION With TO-220C package Low collector saturation voltage Wide area of safe operation APPLICATIONS Switching regulators DC-DC converters High frequency power amplifiers PINNING PIN DESCRIPTION1 Base Collector;connected to 2mounting base 3 Emitter Absolute maxi

 8.6. Size:339K  hgsemi
2sc2510a.pdf

2SC2518

HG RF POWER TRANSISTOR2SC2510ASemiconductorsHGROHS Compliance,Silicon NPN POWER TRANSISTOR Specified 28V, 28MHz Characteristics Output Power : Po = 150WPEP (Min.) Power Gain : Gp = 12.2dB (Min.) Collector Efficiency = 35% (Min.) : C_30dB Intermodulation Distortion : IMD = (Max.) ABSOLUTE MAXIMUM RATINGS (Tc = 25C) CHARACTERISTIC SYMBOL RATING UNIT Collecto

 8.7. Size:176K  cn sptech
2sc2517m 2sc2517l 2sc2517k.pdf

2SC2518
2SC2518

SPTECH Product SpecificationSPTECH Silicon NPN Power Transistor 2SC2517DESCRIPTIONLow Collector Saturation VoltageFast Switching SpeedAPPLICATIONSDesigned for high-speed switching, and is ideal for useas a driver in devices such as switching reglators,DC/DCconverters, and high frequency power amplifiers.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNIT

 8.8. Size:222K  inchange semiconductor
2sc2517.pdf

2SC2518
2SC2518

isc Silicon NPN Power Transistor 2SC2517DESCRIPTIONLow Collector Saturation VoltageFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-speed switching, and is ideal for useas a driver in devices such as switching reglators,DC/DCconverters, and high frequency power amplifiers.ABSOLUTE MAXIM

 8.9. Size:222K  inchange semiconductor
2sc2516.pdf

2SC2518
2SC2518

isc Silicon NPN Power Transistor 2SC2516DESCRIPTIONLow Collector Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-speed switching, and is ideal for useas a driver in devices such as switching reglators,DC/DCconverters, and high frequency power amplifiers.ABSOLUTE MAXIMUM RATINGS(T =25)a

Otros transistores... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

 

 
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