2SC2522
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SC2522
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 120
W
Tensión colector-base (Vcb): 120
V
Tensión colector-emisor (Vce): 120
V
Tensión emisor-base (Veb): 5
V
Corriente del colector DC máxima (Ic): 12
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 40
MHz
Capacitancia de salida (Cc): 180
pF
Ganancia de corriente contínua (hfe): 60
Paquete / Cubierta:
TO3
Búsqueda de reemplazo de transistor bipolar 2SC2522
2SC2522
Datasheet (PDF)
..1. Size:207K inchange semiconductor
2sc2522.pdf 
isc Silicon NPN Power Transistor 2SC2522DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-V = 120V(Min)(BR)CEOFast Switching SpeedWide Area of Safe OperationComplement to Type 2SA1072Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh frequency power amplifierAudio power amplifiersSwitching regulatorsD
8.2. Size:213K inchange semiconductor
2sc2523.pdf
isc Silicon NPN Power Transistor 2SC2523DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-V = 160V(Min)(BR)CEOFast Switching SpeedWide Area of Safe OperationComplement to Type 2SA1073Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh frequency power amplifierAudio power amplifiersSwitching regulatorsD
8.3. Size:224K inchange semiconductor
2sc2526.pdf
isc Silicon NPN Power Transistor 2SC2526DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-V = 160V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SA1076Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VAL
8.4. Size:194K inchange semiconductor
2sc2528.pdf
isc Silicon NPN Power Transistor 2SC2528DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 120V(Min)(BR)CEOLow Collector-Emitter Saturation Voltage-: V = 1.0V(Max) @I = 0.7ACE(sat) CComplement to Type 2SA1078Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh frequency power amplifier,Audio power amplifierDirv
8.5. Size:189K inchange semiconductor
2sc2525.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC2525DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-V = 120V(Min)(BR)CEOGood Linearity of hFE100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aS
8.6. Size:193K inchange semiconductor
2sc2527.pdf
isc Silicon NPN Power Transistor 2SC2527DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 120V(Min)(BR)CEOFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulator and high voltage switching applications.High speed DC-DC converter applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMB
Otros transistores... 2SA1771
, 2SA178
, 2SA1790
, 2SA1791
, 2SA1792
, 2SA1793
, 2SA1794
, 2SA1795
, BC557
, 2SA1799
, 2SA17H
, 2SA18
, 2SA180
, 2SA1800
, 2SA1800O
, 2SA1800R
, 2SA1800Y
.
