2SC2523
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SC2523
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 120
W
Tensión colector-base (Vcb): 160
V
Tensión colector-emisor (Vce): 160
V
Tensión emisor-base (Veb): 5
V
Corriente del colector DC máxima (Ic): 12
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 40
MHz
Capacitancia de salida (Cc): 180
pF
Ganancia de corriente contínua (hfe): 60
Paquete / Cubierta:
TO3
Búsqueda de reemplazo de transistor bipolar 2SC2523
2SC2523
Datasheet (PDF)
..1. Size:213K inchange semiconductor
2sc2523.pdf 
isc Silicon NPN Power Transistor 2SC2523DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-V = 160V(Min)(BR)CEOFast Switching SpeedWide Area of Safe OperationComplement to Type 2SA1073Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh frequency power amplifierAudio power amplifiersSwitching regulatorsD
8.2. Size:224K inchange semiconductor
2sc2526.pdf
isc Silicon NPN Power Transistor 2SC2526DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-V = 160V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SA1076Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VAL
8.3. Size:194K inchange semiconductor
2sc2528.pdf
isc Silicon NPN Power Transistor 2SC2528DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 120V(Min)(BR)CEOLow Collector-Emitter Saturation Voltage-: V = 1.0V(Max) @I = 0.7ACE(sat) CComplement to Type 2SA1078Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh frequency power amplifier,Audio power amplifierDirv
8.4. Size:189K inchange semiconductor
2sc2525.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC2525DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-V = 120V(Min)(BR)CEOGood Linearity of hFE100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aS
8.5. Size:207K inchange semiconductor
2sc2522.pdf
isc Silicon NPN Power Transistor 2SC2522DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-V = 120V(Min)(BR)CEOFast Switching SpeedWide Area of Safe OperationComplement to Type 2SA1072Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh frequency power amplifierAudio power amplifiersSwitching regulatorsD
8.6. Size:193K inchange semiconductor
2sc2527.pdf
isc Silicon NPN Power Transistor 2SC2527DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 120V(Min)(BR)CEOFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulator and high voltage switching applications.High speed DC-DC converter applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMB
Otros transistores... 2SA1803O
, 2SA1803R
, 2SA1804
, 2SA1804O
, 2SA1804R
, 2SA1805
, 2SA1805O
, 2SA1805R
, TIP42
, 2SA181
, 2SA1810
, 2SA1810B
, 2SA1810C
, 2SA1811
, 2SA1815
, 2SA1815-3
, 2SA1815-4
.
